All Stories

  1. An Electrostatic Discharge Protection Circuit Technique for the Mitigation of Single-Event Transients in SiGe BiCMOS Technology

    Article • IEEE Transactions on Nuclear Science, January 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song

  2. Modeling Single-Event Transient Propagation in a SiGe BiCMOS Direct-Conversion Receiver

    Article • IEEE Transactions on Nuclear Science, January 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song

  3. A SiGe-BiCMOS Wideband (2–22 GHz) Active Power Divider/Combiner Circuit Supporting Bidirectional Operation

    Article • IEEE Transactions on Microwave Theory and Techniques, December 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song

  4. A Compact, Active SiGe Power Divider With Multi-Octave Bandwidth

    Article • IEEE Microwave and Wireless Components Letters, November 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song

  5. This paper describe the design of a high-efficiency high-output-power power amplifier.

    Article • Microwave and Optical Technology Letters, September 2016, Wiley

    Dr Ickhyun Song

  6. Wideband active bi-directional SiGe digital step attenuator using an active DPDT switch

    Article • September 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song

  7. Modeling single-event transient propagation in a SiGe BiCMOS direct-conversion receiver

    Article • September 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song

  8. A Compact, Wideband Lumped-Element Wilkinson Power Divider/Combiner Using Symmetric Inductors with Embedded Capacitors

    Article • IEEE Microwave and Wireless Components Letters, August 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song

  9. A 2–22 GHz wideband active bi-directional power divider/combiner in 130 nm SiGe BiCMOS technology

    Article • May 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song

  10. An Active Bi-Directional SiGe DPDT Switch With Multi-Octave Bandwidth

    Article • IEEE Microwave and Wireless Components Letters, April 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song

  11. Optimization of SiGe HBT RF Switches for Single-Event Transient Mitigation

    Article • IEEE Transactions on Nuclear Science, December 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song

  12. SiGe HBT LNA with TSV

    Article • Microwave and Optical Technology Letters, August 2015, Wiley

    Dr Ickhyun Song

  13. Impact of Total Ionizing Dose on a 4th Generation, 90 nm SiGe HBT Gaussian Pulse Generator

    Article • IEEE Transactions on Nuclear Science, December 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song

  14. Evaluation of Enhanced Low Dose Rate Sensitivity in Fourth-Generation SiGe HBTs

    Article • IEEE Transactions on Nuclear Science, December 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song

  15. Design of Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs

    Article • IEEE Transactions on Nuclear Science, December 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song

  16. An Investigation of Single-Event Transients in C-SiGe HBT on SOI Current Mirror Circuits

    Article • IEEE Transactions on Nuclear Science, December 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song

  17. A 34–110 GHz wideband, asymmetric, broadside-coupled Marchand balun in 180 nm SiGe BiCMOS technology

    Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song

  18. Systematic methodology for applying Mason's signal flow graph to analysis of feedback circuits

    Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song

  19. A complementary SiGe HBT on SOI low dropout voltage regulator utilizing a nulling resistor

    Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song

  20. An investigation of the temperature dependent linearity of weakly-saturated, electrically-matched SiGe NPN and PNP HBTs

    Article • January 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song

  21. A 20nm 1.8V 8Gb PRAM with 40MB/s program bandwidth

    Article • February 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song

  22. A 58nm 1.8V 1Gb PRAM with 6.4MB/s program BW

    Article • February 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song

  23. $f_{\max}$ Improvement by Controlling Extrinsic Parasitics in Circuit-Level MOS Transistor

    Article • IEEE Electron Device Letters, December 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song

  24. 0.7 V supply highly linear subthreshold low-noise amplifier design for 2.4 GHz wireless sensor network applications

    Article • Microwave and Optical Technology Letters, March 2009, Wiley

    Dr Ickhyun Song

  25. Application of the Compact Channel Thermal Noise Model of Short Channel MOSFETs to CMOS RFIC Design

    Article • IEICE Transactions on Electronics, January 2009, Institute of Electronics, Information and Communications Engineers (IEICE)

    Dr Ickhyun Song

  26. Low power size-efficient CMOS UWB low-noise amplifier design

    Article • Microwave and Optical Technology Letters, December 2008, Wiley

    Dr Ickhyun Song

  27. A Simple Figure of Merit of RF MOSFET for Low-Noise Amplifier Design

    Article • IEEE Electron Device Letters, December 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song

  28. A low power low noise amplifier with subthreshold operation in 130 nm CMOS technology

    Article • Microwave and Optical Technology Letters, November 2008, Wiley

    Dr Ickhyun Song

  29. Accurate Extraction of Effective Channel Length and Source/Drain Series Resistance in Ultrashort-Channel MOSFETs by Iteration Method

    Article • IEEE Transactions on Electron Devices, October 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song

  30. A 2.4 GHz CMOS ultra low power low noise amplifier design with 65 nm CMOS technology

    Article • October 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song

  31. Design optimization of a 10 GHz low noise amplifier with gate drain capacitance consideration in 65 nm CMOS technology

    Article • October 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song

  32. Small size low noise amplifier with suppressed noise from gate resistance

    Article • Microwave and Optical Technology Letters, September 2008, Wiley

    Dr Ickhyun Song

  33. Characterization of Sensitivity and Resolution of Silicon Resistive Probe

    Article • Japanese Journal of Applied Physics, March 2008, Japan Society of Applied Physics

    Dr Ickhyun Song

  34. Optimization of cascode configuration in CMOS low-noise amplifier

    Article • Microwave and Optical Technology Letters, January 2008, Wiley

    Dr Ickhyun Song

  35. Suppression of Digital Noise Coupling on LNA in 0.13-μm RFCMOS Technology by Global Guard Rings

    Article • January 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song

  36. Suppression of Digital Noise Coupling on LNA in 0.13-μm RFCMOS Technology by Global Guard Rings

    Article • January 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song

  37. 2.4 GHz ISM-Band Receiver Design in a 0.18 $\mu{\hbox{m}}$ Mixed Signal CMOS Process

    Article • IEEE Microwave and Wireless Components Letters, October 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song

  38. Analytic approach to power-constrained CMOS low-noise amplifier design with figure of merit consideration

    Article • October 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song

  39. A New Noise Parameter Model of Short-Channel MOSFETs

    Article • June 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ickhyun Song