All Stories

  1. Modulating metallic conductive filaments via bilayer oxides in resistive switching memory

    Article • Applied Physics Letters, May 2019, American Institute of Physics

    Cheng Song, Huaqiang Wu, Fei Zeng, Jun Yin, Muhammad Shahrukh Saleem, Yiming Sun

  2. High-frequency V-doped ZnO/SiC surface acoustic wave devices with enhanced electromechanical coupling coefficient

    Article • Applied Physics Letters, March 2019, American Institute of Physics

    Fei Zeng, Cheng Song

  3. Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5–Ta system

    Article • Physical Chemistry Chemical Physics, January 2015, Royal Society of Chemistry

    Fei Zeng

  4. Effect of heavy-ion on frequency selectivity of semiconducting polymer/electrolyte heterojunction

    Article • RSC Advances, January 2015, Royal Society of Chemistry

    Fei Zeng

  5. Learning processes modulated by the interface effects in a Ti/conducting polymer/Ti resistive switching cell

    Article • RSC Advances, January 2014, Royal Society of Chemistry

    Fei Zeng

  6. Synaptic plasticity and learning behaviours mimicked through Ag interface movement in an Ag/conducting polymer/Ta memristive system

    Article • Journal of Materials Chemistry C, January 2013, Royal Society of Chemistry

    Fei Zeng

  7. Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer

    Article • Nanoscale, January 2013, Royal Society of Chemistry

    Fei Zeng

  8. Contributions of magnetic properties in epitaxial copper-doped ZnO

    Article • Physical Chemistry Chemical Physics, January 2013, Royal Society of Chemistry

    Fei Zeng