All Stories

  1. A 300 V Ultra Low Specific On-Resistance High-Side p-LDMOS with Auto-biased n-LDMOS for SPIC

    Article • IEEE Transactions on Power Electronics, January 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Mr Bo Yi

  2. A new super-junction VDMOS realizing fast reverse recovery

    Article • June 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Mr Bo Yi

  3. Study on HK-VDMOS with Deep Trench Termination

    Article • Superlattices and Microstructures, November 2014, Elsevier

    Mr Bo Yi

  4. snapback-free RC-IGBT

    Article • Electronics Letters, April 2014, the Institution of Engineering and Technology (the IET)

    Mr Bo Yi