All Stories

  1. On the broken rotor bar diagnosis using time-frequency analysis: “Is one spectral representation enough for the characterization of monitored signals?”

    Article • IET Electric Power Applications, February 2019, the Institution of Engineering and Technology (the IET)

    Dr Neophytos Lophitis

  2. Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors

    Article • IEEE Electron Device Letters, August 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Neophytos Lophitis

  3. Improving Current Controllability in Bi-Mode Gate Commutated Thyristors

    Article • IEEE Transactions on Electron Devices, July 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Neophytos Lophitis

  4. An experimental demonstration of a 4.5 kV “Bi-mode Gate Commutated Thyristor” (BGCT)

    Article • May 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Neophytos Lophitis

  5. Experimental demonstration of the p-ring FS+ Trench IGBT concept: A new design for minimizing the conduction losses

    Article • May 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Neophytos Lophitis

  6. The Stripe Fortified GCT: A new GCT design for maximizing the controllable current

    Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Neophytos Lophitis

  7. Parameters influencing the maximum controllable current in gate commutated thyristors

    Article • IET Circuits Devices & Systems, May 2014, the Institution of Engineering and Technology (the IET)

    Dr Neophytos Lophitis

  8. Gate Commutated Thyristor With Voltage Independent Maximum Controllable Current

    Article • IEEE Electron Device Letters, August 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Neophytos Lophitis

  9. The Destruction Mechanism in GCTs

    Article • IEEE Transactions on Electron Devices, February 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Neophytos Lophitis

  10. Experimentally validated three dimensional GCT wafer level simulations

    Article • June 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Neophytos Lophitis

  11. Turn-off failure mechanism in large area IGCTs

    Article • October 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Neophytos Lophitis