All Stories

  1. Computing Photonic Bandgap from Dispersion Relation for TM Mode Propagation Inside Metamaterial-Based 1D PhC

    Article • Micro and Nanosystems, December 2020, Bentham Science Publishers

    Dr Angsuman Sarkar

  2. Modeling and Simulation of Advanced Nanoscale Devices

    Article • Micro and Nanosystems, December 2020, Bentham Science Publishers

    Dr Angsuman Sarkar

  3. Radio frequency/analog and linearity performance of a junctionless double gate metal–oxide–semiconductor field-effect transistor

    Article • SIMULATION, April 2017, SAGE Publications

    Dr Angsuman Sarkar

  4. Analytical subthreshold modeling of dual material gate engineered nano-scale junctionless surrounding gate MOSFET considering ECPE

    Article • Superlattices and Microstructures, June 2015, Elsevier

    Dr Angsuman Sarkar

  5. Investigation of analog/RF performance of staggered heterojunctions based nanowire tunneling field-effect transistors

    Article • Superlattices and Microstructures, April 2015, Elsevier

    Dr Angsuman Sarkar

  6. Effect of gate engineering in JLSRG MOSFET to suppress SCEs: An analytical study

    Article • Physica E Low-dimensional Systems and Nanostructures, March 2015, Elsevier

    Dr Angsuman Sarkar

  7. Staggered Heterojunctions-Based Nanowire Tunneling Field-Effect Transistors for Analog/Mixed-Signal System-on-Chip Applications

    Article • NANO, February 2015, World Scientific Pub Co Pte Lt

    Dr Angsuman Sarkar

  8. An Analytical Surface Potential Based Threshold Voltage Model of Triple Material Surrounding Gate Schottky Barrier MOSFET

    Article • Journal of Computational and Theoretical Nanoscience, February 2015, American Scientific Publishers

    Dr Angsuman Sarkar

  9. An analytical model of triple-material double-gate metal-oxide-semiconductor field-effect transistor to suppress short-channel effects

    Article • International Journal of Numerical Modelling Electronic Networks Devices and Fields, January 2015, Wiley

    Dr Biswajit Baral, Dr Angsuman Sarkar

  10. Analytical study of Dual Material Surrounding Gate MOSFET to suppress short-channel effects (SCEs)

    Article • Engineering Science and Technology an International Journal, December 2014, Elsevier

    Dr Angsuman Sarkar

  11. The influence of gate underlap on analog and RF performance of III–V heterostructure double gate MOSFET

    Article • Superlattices and Microstructures, September 2014, Elsevier

    Dr Angsuman Sarkar

  12. An Analytical Surface Potential Model of Surrounding Gate Tunnel FET

    Article • August 2014, Springer Science + Business Media

    Dr Angsuman Sarkar

  13. The Impact of Gate Underlap on Analog and RF Performance of Hetero-Junction FET

    Article • August 2014, Springer Science + Business Media

    Dr Angsuman Sarkar

  14. Study of RF performance of surrounding gate MOSFET with gate overlap and underlap

    Article • Advances in Natural Sciences Nanoscience and Nanotechnology, July 2014, Institute of Physics Publishing

    Dr Angsuman Sarkar

  15. RF and analogue performance investigation of DG tunnel FET

    Article • International Journal of Electronics Letters, December 2013, Taylor & Francis

    Dr Angsuman Sarkar

  16. Device Simulation Using Silvaco ATLAS Tool

    Article • May 2013, Taylor & Francis

    Dr Angsuman Sarkar

  17. Effect of gate engineering in double-gate MOSFETs for analog/RF applications

    Article • Microelectronics Journal, November 2012, Elsevier

    Dr Angsuman Sarkar

  18. Analog and RF performance investigation of cylindrical surrounding-gate MOSFET with an analytical pseudo-2D model

    Article • Journal of Computational Electronics, February 2012, Springer Science + Business Media

    Dr Angsuman Sarkar

  19. A new analytical subthreshold model of SRG MOSFET with analogue performance investigation

    Article • International Journal of Electronics, February 2012, Taylor & Francis

    Dr Angsuman Sarkar

  20. Asymmetric halo and symmetric Single-Halo Dual-Material Gate and Double-Halo Dual-Material Gate n-MOSFETs characteristic parameter modeling

    Article • International Journal of Numerical Modelling Electronic Networks Devices and Fields, January 2012, Wiley

    Dr Angsuman Sarkar

  21. Modelling of parameters for asymmetric halo and symmetric DHDMG n-MOSFETs

    Article • International Journal of Electronics, October 2011, Taylor & Francis

    Dr Angsuman Sarkar

  22. Effect of fringing fields on subthreshold surface potential of channel engineered short channel MOSFETs

    Article • November 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Angsuman Sarkar

  23. Effect of fringing field in modeling of subthreshold surface potential in Dual Material Gate(DMG) MOSFETS

    Article • January 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Angsuman Sarkar