All Stories

  1. Unique features of laterally aligned GeSi nanowires self-assembled on the vicinal Si (001) surface misoriented toward the [100] direction

    Article • Nanoscale, January 2015, Royal Society of Chemistry

    Professor Zhenyang Zhong

  2. Erratum: “Tunable photoluminescence of self-assembled GeSi quantum dots by B+ implantation and rapid thermal annealing” [J. Appl. Phys. 115, 233502 (2014)]

    Article • Journal of Applied Physics, September 2014, American Institute of Physics

    Professor Zhenyang Zhong

  3. Large-Area Ordered P-type Si Nanowire Arrays as Photocathode for Highly Efficient Photoelectrochemical Hydrogen Generation

    Article • ACS Applied Materials & Interfaces, August 2014, American Chemical Society (ACS)

    Professor Zhenyang Zhong

  4. Large-area ordered Ge-Si compound quantum dot molecules on dot-patterned Si (001) substrates

    Article • Nanotechnology, July 2014, Institute of Physics Publishing

    Professor Zhenyang Zhong

  5. Tunable photoluminescence of self-assembled GeSi quantum dots by B+ implantation and rapid thermal annealing

    Article • Journal of Applied Physics, June 2014, American Institute of Physics

    Professor Zhenyang Zhong

  6. Dramatically enhanced self-assembly of GeSi quantum dots with superior photoluminescence induced by the substrate misorientation

    Article • APL Materials, February 2014, American Institute of Physics

    Professor Zhenyang Zhong

  7. Fabrication and characterization of SiGe coaxial quantum wells on ordered Si nanopillars

    Article • Nanotechnology, January 2014, Institute of Physics Publishing

    Professor Zhenyang Zhong

  8. Towards controllable growth of self-assembled SiGe single and double quantum dot nanostructures

    Article • Nanoscale, January 2014, Royal Society of Chemistry

    Professor Zhenyang Zhong

  9. Controlled formation of GeSi nanostructures on periodic Si (001) sub-micro pillars

    Article • Nanoscale, January 2014, Royal Society of Chemistry

    Professor Zhenyang Zhong

  10. Substantial influence on solar energy harnessing ability by geometries of ordered Si nanowire array

    Article • Nanoscale Research Letters, January 2014, Springer Science + Business Media

    Professor Zhenyang Zhong

  11. Photogenerated charges and surface potential variations investigated on single Si nanorods by electrostatic force microscopy combined with laser irradiation

    Article • Nanoscale Research Letters, January 2014, Springer Science + Business Media

    Professor Zhenyang Zhong

  12. Anomalous magnetoresistance of an array of GeSi nanowires

    Article • Applied Physics Letters, May 2013, American Institute of Physics

    Professor Zhenyang Zhong

  13. Optical properties of coupled three-dimensional Ge quantum dot crystals

    Article • Optics Express, March 2013, Optical Society of America (OSA)

    Professor Zhenyang Zhong

  14. Formation and Characterization of Multilayer GeSi Nanowires on Miscut Si (001) Substrates

    Article • Journal of Nanoscience and Nanotechnology, February 2013, American Scientific Publishers

    Professor Zhenyang Zhong

  15. Perspectives of controlled GeSi dots on prepatterned Si (001) substrates

    Article • Journal of Material Science & Engineering, January 2012, OMICS Publishing Group

    Professor Zhenyang Zhong

  16. A Feasible Routine for Large-Scale Nanopatterning via Nanosphere Lithography

    Article • December 2011, IntechOpen

    Professor Zhenyang Zhong

  17. A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates

    Article • Nanoscale Research Letters, April 2011, Springer Science + Business Media

    Professor Zhenyang Zhong

  18. Ordered GeSi nanorings grown on patterned Si (001) substrates

    Article • Nanoscale Research Letters, January 2011, Springer Science + Business Media

    Professor Zhenyang Zhong

  19. Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots

    Article • Nanoscale Research Letters, October 2010, Springer Science + Business Media

    Professor Zhenyang Zhong

  20. Enhanced photoluminescence due to lateral ordering of GeSi quantum dots on patterned Si(001) substrates

    Article • Nanotechnology, April 2010, Institute of Physics Publishing

    Professor Zhenyang Zhong

  21. Fabrication and characterization of ordered GeSi nanoislands on Si (001) substrates

    Article • January 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Zhenyang Zhong

  22. Circularly organized quantum dot nanostructures of Ge on Si substrates

    Article • Semiconductor Science and Technology, July 2009, Institute of Physics Publishing

    Professor Zhenyang Zhong

  23. The fabrication and application of patterned Si(001) substrates with ordered pits via nanosphere lithography

    Article • Nanotechnology, February 2009, Institute of Physics Publishing

    Professor Zhenyang Zhong

  24. The studies of Ge quantum dots on strained Si0.7Ge0.3 layer by photoluminescence and deep level transient spectroscopy

    Article • Applied Surface Science, January 2009, Elsevier

    Professor Zhenyang Zhong

  25. Temperature dependence of ordered GeSi island growth on patterned Si (001) substrates

    Article • Applied Physics Letters, July 2008, American Institute of Physics

    Professor Zhenyang Zhong

  26. Systematic studies of the photoluminescence of Ge quantum dots grown on strained Si0.7Ge0.3 buffer layer

    Article • Applied Physics Letters, March 2008, American Institute of Physics

    Professor Zhenyang Zhong

  27. Delayed Plastic Relaxation on Patterned Si Substrates: Coherent SiGe Pyramids with Dominant { 111 } Facets

    Article • Physical Review Letters, April 2007, American Physical Society (APS)

    Professor Zhenyang Zhong

  28. Growth and characterization of two- and three-dimensionally ordered quantum dots

    Article • Journal of Physics Conference Series, May 2006, Institute of Physics Publishing

    Professor Zhenyang Zhong

  29. Ge∕Si islands in a three-dimensional island crystal studied by x-ray diffraction

    Article • Journal of Applied Physics, October 2005, American Institute of Physics

    Professor Zhenyang Zhong

  30. Growth of Ge islands on prepatterned Si (001) substrates

    Article • Physica E Low-dimensional Systems and Nanostructures, July 2004, Elsevier

    Professor Zhenyang Zhong

  31. Site-controlled and size-homogeneous Ge islands on prepatterned Si (001) substrates

    Article • Applied Physics Letters, March 2004, American Institute of Physics

    Professor Zhenyang Zhong

  32. Two-dimensional lateral ordering of self-assembled Ge islands on patterned substrates

    Article • Physica E Low-dimensional Systems and Nanostructures, March 2004, Elsevier

    Professor Zhenyang Zhong

  33. Evolution of shape, height, and in-plane lattice constant of Ge-rich islands during capping with Si

    Article • Applied Physics Letters, November 2003, American Institute of Physics

    Professor Zhenyang Zhong

  34. Two-dimensional periodic positioning of self-assembled Ge islands on prepatterned Si (001) substrates

    Article • Applied Physics Letters, June 2003, American Institute of Physics

    Professor Zhenyang Zhong

  35. Positioning of self-assembled Ge islands on stripe-patterned Si(001) substrates

    Article • Journal of Applied Physics, May 2003, American Institute of Physics

    Professor Zhenyang Zhong

  36. Ge island formation on stripe-patterned Si(001) substrates

    Article • Applied Physics Letters, January 2003, American Institute of Physics

    Professor Zhenyang Zhong

  37. Influence of GaN domain size on the electron mobility of two-dimensional electron gases in AlGaN/GaN heterostructures determined by x-ray reflectivity and diffraction

    Article • Applied Physics Letters, May 2002, American Institute of Physics

    Professor Zhenyang Zhong

  38. X-ray study of antiphase boundaries in the quadruple-period ordered GaAs0.87Sb0.13 alloy

    Article • Journal of Applied Physics, July 2001, American Institute of Physics

    Professor Zhenyang Zhong

  39. Quadruple-period ordering along [110] in a GaAs 0.87 Sb 0.13 alloy

    Article • January 2001, American Physical Society (APS)

    Professor Zhenyang Zhong