All Stories

  1. Performance Comparison of InAs Based DG-MOSFET with Respect to SiO2 and Gate Stack Configuration

    Article • Nanoscience &amp Nanotechnology-Asia, August 2020, Bentham Science Publishers

    Dr Biswajit Baral

  2. Effect of gate-length downscaling on the analog/RF and linearity performance of InAs-based nanowire tunnel FET

    Article • International Journal of Numerical Modelling Electronic Networks Devices and Fields, August 2016, Wiley

    Dr Biswajit Baral

  3. An analytical model of triple-material double-gate metal-oxide-semiconductor field-effect transistor to suppress short-channel effects

    Article • International Journal of Numerical Modelling Electronic Networks Devices and Fields, January 2015, Wiley

    Dr Biswajit Baral, Dr Angsuman Sarkar