All Stories

  1. Mid-infrared modulated photoluminescence mapping to investigate in-plane distributions of bandedge transitions in As-doped HgCdTe

    Article • Applied Physics Letters, October 2023, American Institute of Physics

    Jun Shao

  2. Evaluating interface roughness and micro-fluctuation potential of InAs/GaSb superlattices by mid-infrared magnetophotoluminescence

    Article • Applied Physics Letters, August 2020, American Institute of Physics

    Jun Shao

  3. Spatially resolved and two-dimensional mapping modulated infrared photoluminescence spectroscopy with functional wavelength up to 20 μm

    Article • Review of Scientific Instruments, September 2019, American Institute of Physics

    Jun Shao

  4. Bismuth-induced band-tail states in GaAsBi probed by photoluminescence

    Article • Applied Physics Letters, February 2019, American Institute of Physics

    Jun Shao, Wenwu Pan

  5. Evolution of interfacial properties with annealing in InAs/GaSb superlattice probed by infrared photoluminescence

    Article • Japanese Journal of Applied Physics, July 2014, Japan Society of Applied Physics

    Jun Shao

  6. Shallow-terrace-like interface in dilute-bismuth GaSb/AlGaSb single quantum wells evidenced by photoluminescence

    Article • Journal of Applied Physics, April 2013, American Institute of Physics

    Jun Shao

  7. Mechanisms of infrared photoluminescence in HgTe/HgCdTe superlattice

    Article • Journal of Applied Physics, September 2012, American Institute of Physics

    Jun Shao

  8. Photoionization absorption and zero-field spin splitting of acceptor-bound magnetic polaron in p-type Hg1-xMnxTe single crystals

    Article • Journal of Applied Physics, April 2012, American Institute of Physics

    Jun Shao

  9. Infrared photoluminescence of arsenic-doped HgCdTe in a wide temperature range of up to 290 K

    Article • Journal of Applied Physics, August 2011, American Institute of Physics

    Jun Shao

  10. Competition of compressive strain with substrate misorientation in CuPt-type ordered GaInP/AlGaInP quantum wells

    Article • Journal of Applied Physics, January 2011, American Institute of Physics

    Jun Shao