All Stories

  1. Modeling and simulation of 2DEG density and intrinsic capacitances in AlInN/GaN MOSHEMT

    Article • International Journal of Numerical Modelling Electronic Networks Devices and Fields, July 2017, Wiley

    Dr Trupti R Lenka, Mr Raghunandan Swain

  2. Effect of thin gate dielectrics on DC, radio frequency and linearity characteristics of lattice-matched AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistor

    Article • IET Circuits Devices & Systems, September 2016, the Institution of Engineering and Technology (the IET)

    Mr Raghunandan Swain, Dr Trupti R Lenka

  3. Interface DOS dependent analytical model development for DC characteristics of normally-off AlN/GaN MOSHEMT

    Article • Superlattices and Microstructures, August 2015, Elsevier

    Mr Raghunandan Swain, Dr Trupti R Lenka

  4. Modeling and simulation of oxide dependent 2DEG sheet charge density in AlGaN/GaN MOSHEMT

    Article • Journal of Computational Electronics, June 2015, Springer Science + Business Media

    Mr Raghunandan Swain, Dr Trupti R Lenka

  5. Impact of oxide thickness on gate capacitance – Modelling and comparative analysis of GaN-based MOSHEMTs

    Article • Pramana, May 2015, Springer Science + Business Media

    Mr Raghunandan Swain, Dr Trupti R Lenka

  6. Impact of barrier thickness on gate capacitance—modeling and comparative analysis of GaN based MOSHEMTs

    Article • Journal of Semiconductors, March 2015, Institute of Physics Publishing

    Mr Raghunandan Swain, Dr Trupti R Lenka

  7. Modeling and comparative analysis of DC characteristics of AlGaN/GaN HEMT and MOSHEMT devices

    Article • International Journal of Numerical Modelling Electronic Networks Devices and Fields, February 2015, Wiley

    Mr Raghunandan Swain, Dr Trupti R Lenka

  8. Comparative study of AlN/GaN HEMT and MOSHEMT structures by varying oxide thickness

    Article • October 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Mr Raghunandan Swain, Dr Trupti R Lenka