All Stories

  1. Towards simulation at picometer-scale resolution: Revisiting inversion domain boundaries in GaN

    Article • October 2018, American Physical Society (APS)

    Dr Joel Eymery

  2. Thermal Evolution of Implantation Damages in Mg-Implanted GaN Layers Grown on Si

    Article • ECS Transactions, August 2017, The Electrochemical Society

    Dr Joel Eymery

  3. InGaN/GaN nanowire flexible light emitting diodes and photodetectors

    Article • July 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Joel Eymery

  4. Nitride-nanowire-based flexible LEDs

    Article • SPIE Newsroom, May 2017, SPIE

    Dr Joel Eymery

  5. Thin-wall GaN/InAlN multiple quantum well tubes

    Article • Nano Letters, April 2017, American Chemical Society (ACS)

    Dr Joel Eymery

  6. Picometre-precision atomic structure of inversion domain boundaries in GaN

    Article • December 2016, Wiley

    Dr Joel Eymery

  7. Flexible White Light Emitting Diodes Based on Nitride Nanowires and Nanophosphors

    Article • ACS Photonics, April 2016, American Chemical Society (ACS)

    Dr Joel Eymery

  8. Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness

    Article • Applied Physics Letters, April 2016, American Institute of Physics

    Dr Joel Eymery

  9. InGaN/GaN core/shell nanowires for visible to ultraviolet range photodetection

    Article • physica status solidi (a), January 2016, Wiley

    Dr Joel Eymery

  10. Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes

    Article • Nanoscale Research Letters, November 2015, Springer Science + Business Media

    Dr Joel Eymery

  11. Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires

    Article • Nano Letters, October 2015, American Chemical Society (ACS)

    Dr Joel Eymery

  12. Inversion Domain Boundaries in GaN Wires Revealed by Coherent Bragg Imaging

    Article • ACS Nano, September 2015, American Chemical Society (ACS)

    Dr Joel Eymery

  13. Nitride nanowire light emitting diodes

    Article • July 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Joel Eymery

  14. Effect of the barrier thickness on the performance of multiple-quantum-well InGaN photovoltaic cells

    Article • Japanese Journal of Applied Physics, June 2015, Japan Society of Applied Physics

    Dr Joel Eymery

  15. XTOP: high-resolution X-ray diffraction and imaging

    Article • Journal of Applied Crystallography, May 2015, International Union of Crystallography

    Dr Vincent Favre-Nicolin, Dr Joel Eymery

  16. Growth of GaN-based nanorod heterostructures (core-shell) for optoelectronics and their nanocharacterization

    Article • January 2015, Elsevier

    Dr Joel Eymery

  17. Composition of Wide Bandgap Semiconductor Materials and Nanostructures Measured by Atom Probe Tomography and Its Dependence on the Surface Electric Field

    Article • The Journal of Physical Chemistry C, October 2014, American Chemical Society (ACS)

    Dr Joel Eymery

  18. Effect of the quantum well thickness on the performance of InGaN photovoltaic cells

    Article • Applied Physics Letters, September 2014, American Institute of Physics

    Dr Joel Eymery

  19. GaN wire-based Langmuir–Blodgett films for self-powered flexible strain sensors

    Article • Nanotechnology, August 2014, Institute of Physics Publishing

    Dr Joel Eymery

  20. Metal-Organic Vapor Phase Epitaxy Growth of GaN Nanorods

    Article • August 2014, Wiley

    Dr Joel Eymery

  21. Integrated Photonic Platform Based on InGaN/GaN Nanowire Emitters and Detectors

    Article • Nano Letters, June 2014, American Chemical Society (ACS)

    Dr Joel Eymery

  22. Experimental and theoretical analysis of transport properties of core–shell wire light emitting diodes probed by electron beam induced current microscopy

    Article • Nanotechnology, June 2014, Institute of Physics Publishing

    Dr Joel Eymery

  23. Exploring Single Semiconductor Nanowires with a Multimodal Hard X‐ray Nanoprobe

    Article • Advanced Materials, March 2014, Wiley

    Dr Joel Eymery

  24. Improved conversion efficiency of as-grown InGaN/GaN quantum-well solar cells for hybrid integration

    Article • Applied Physics Express, February 2014, Institute of Physics Publishing

    Dr Joel Eymery

  25. M -Plane GaN/InAlN Multiple Quantum Wells in Core–Shell Wire Structure for UV Emission

    Article • ACS Photonics, January 2014, American Chemical Society (ACS)

    Dr Joel Eymery

  26. Correlation of Microphotoluminescence Spectroscopy, Scanning Transmission Electron Microscopy, and Atom Probe Tomography on a Single Nano-object Containing an InGaN/GaN Multiquantum Well System

    Article • Nano Letters, January 2014, American Chemical Society (ACS)

    Dr Joel Eymery

  27. Time-Dependent Relaxation of Strained Silicon-on-Insulator Lines Using a Partially Coherent X-Ray Nanobeam

    Article • Physical Review Letters, November 2013, American Physical Society (APS)

    Dr Vincent Favre-Nicolin, Dr Joel Eymery

  28. Determination of the biaxial stress in strained silicon nano-stripes through polarized oblique incidence Raman spectroscopy

    Article • Journal of Applied Physics, October 2013, American Institute of Physics

    Dr Joel Eymery

  29. Photovoltaic Response of InGaN/GaN Multiple-Quantum Well Solar Cells

    Article • Japanese Journal of Applied Physics, August 2013, Institute of Physics Publishing

    Dr Joel Eymery

  30. Self-organized and self-catalyst growth of semiconductor and metal wires by vapour phase epitaxy: GaN rods versus Cu whiskers

    Article • Comptes Rendus Physique, February 2013, Elsevier

    Dr Joel Eymery

  31. Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications

    Article • Nanoscale Research Letters, January 2013, Springer Science + Business Media

    Dr Joel Eymery

  32. InGaN/GaN multiple-quantum well heterostructures for solar cells grown by MOVPE: case studies

    Article • physica status solidi c, December 2012, Wiley

    Dr Joel Eymery

  33. MOVPE catalyst-free growth of GaN wires

    Article • Applied Physics Letters, December 2011, American Institute of Physics

    Dr Joel Eymery

  34. Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN Quantum Wells

    Article • Applied Physics Express, December 2011, Institute of Physics Publishing

    Dr Luiz Fernando Zagonel, Dr Joel Eymery

  35. Semiconductor Templates for the Fabrication of Nano-Objects

    Article • December 2011, Wiley

    Dr Joel Eymery

  36. M-Plane Core–Shell InGaN/GaN Multiple-Quantum-Wells on GaN Wires for Electroluminescent Devices

    Article • Nano Letters, November 2011, American Chemical Society (ACS)

    Dr Joel Eymery

  37. Coherent x-ray wavefront reconstruction of a partially illuminated Fresnel zone plate

    Article • Optics Express, September 2011, Optical Society of America (OSA)

    Dr Vincent Favre-Nicolin, Dr Joel Eymery

  38. Coherent Bragg imaging of strained semi-conductor nanostructures

    Article • Acta Crystallographica Section A Foundations of Crystallography, August 2011, International Union of Crystallography

    Dr Vincent Favre-Nicolin, Dr Joel Eymery

  39. Light emitting diodes based on GaN core/shell wires grown by MOVPE on n-type Si substrate

    Article • Electronics Letters, June 2011, the Institution of Engineering and Technology (the IET)

    Dr Joel Eymery

  40. Single-wire photodetectors based on InGaN/GaN radial quantum wells in GaN wires grown by catalyst-free metal-organic vapor phase epitaxy

    Article • Applied Physics Letters, June 2011, American Institute of Physics

    Dr Joel Eymery

  41. Wafer-scale selective area growth of GaN hexagonal prismatic nanostructures on c-sapphire substrate

    Article • Journal of Crystal Growth, May 2011, Elsevier

    Dr Joel Eymery

  42. Metal positioning on silicon surfaces using the etching of buried dislocation arrays

    Article • Nanotechnology, March 2011, Institute of Physics Publishing

    Dr Joel Eymery

  43. Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy

    Article • Applied Physics Letters, March 2011, American Institute of Physics

    Dr Joel Eymery, Mattias Borg

  44. Homoepitaxial growth of catalyst-free GaN wires on N-polar substrates

    Article • Applied Physics Letters, October 2010, American Institute of Physics

    Dr Joel Eymery

  45. Fully Depleted Strained Silicon-on-Insulator p-MOSFETs With Recessed and Embedded Silicon–Germanium Source/Drain

    Article • IEEE Electron Device Letters, October 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Joel Eymery

  46. Electrical and diffraction characterization of short and narrow MOSFETs on fully depleted strained silicon-on-insulator (sSOI)

    Article • Solid-State Electronics, September 2010, Elsevier

    Dr Joel Eymery

  47. Fully depleted Silicon-On-Insulator with back bias and strain for low power and high performance applications

    Article • June 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Joel Eymery

  48. Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging

    Article • New Journal of Physics, March 2010, Institute of Physics Publishing

    Dr Vincent Favre-Nicolin, Dr Joel Eymery, Mattias Borg

  49. Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy

    Article • Nanotechnology, November 2009, Institute of Physics Publishing

    Dr Joel Eymery

  50. From silicon direct wafer bonding to surface nano-patterning: a way to innovative substrate elaboration

    Article • October 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Joel Eymery

  51. Width and orientation effects in strained FDSOI MOSFETs: strain and device characterization

    Article • September 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Joel Eymery

  52. Elastic relaxation in patterned and implanted strained silicon on insulator

    Article • Journal of Applied Physics, June 2009, American Institute of Physics

    Dr Joel Eymery

  53. Coherent-diffraction imaging of single nanowires of diameter 95 nanometers

    Article • Physical Review B, May 2009, American Physical Society (APS)

    Dr Vincent Favre-Nicolin, Dr Joel Eymery

  54. X-ray measurements of the strain and shape of dielectric/metallic wrap-gated InAs nanowires

    Article • Applied Physics Letters, March 2009, American Institute of Physics

    Dr Vincent Favre-Nicolin, Dr Joel Eymery

  55. Growth and characterization of ZnO nanowires on p-type GaN

    Article • Microelectronics Journal, February 2009, Elsevier

    Dr Joel Eymery

  56. Simulation and Characterization of the Strain Induced by an Original "Embedded Buried Nitride" Technique

    Article • January 2009, The Electrochemical Society

    Dr Joel Eymery

  57. Strain and Shape of Epitaxial InAs/InP Nanowire Superlattice Measured by Grazing Incidence X-ray Techniques

    Article • Nano Letters, September 2007, American Chemical Society (ACS)

    Dr Vincent Favre-Nicolin, Dr Joel Eymery

  58. Direct Wafer Bonding for Nanostructure Preparations

    Article • March 2007, CrossRef Test Account

    Dr Joel Eymery

  59. Quantum communication with quantum dot spins

    Article • Physical Review B, February 2007, American Physical Society (APS)

    Dr Joel Eymery

  60. Direct Wafer Bonding for Nanostructure Preparations

    Article • Solid State Phenomena, January 2007, Trans Tech Publications

    Dr Joel Eymery

  61. Surface Evolution of Strained Thin Solid Films: Stability Analysis and Time Evolution of Local Surface Perturbations

    Article • January 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Joel Eymery

  62. Controlled Ge quantum dots positioning with nano-patterned Si(001) substrates

    Article • physica status solidi (b), December 2006, Wiley

    Dr Joel Eymery

  63. Nanowire-based one-dimensional electronics

    Article • Materials Today, October 2006, Elsevier

    Dr Joel Eymery

  64. Ge quantum dots growth on nanopatterned Si(001) surface: Morphology and stress relaxation study

    Article • Surface Science, August 2006, Elsevier

    Dr Joel Eymery

  65. Optical properties of single non-polar GaN quantum dots

    Article • physica status solidi (b), June 2006, Wiley

    Dr Joel Eymery

  66. X-ray scattering study of hydrogen implantation in silicon

    Article • Journal of Applied Physics, May 2006, American Institute of Physics

    Dr Joel Eymery

  67. Surface diffusion dewetting of thin solid films: Numerical method and application to Si ∕ SiO 2

    Article • Physical Review B, March 2006, American Physical Society (APS)

    Dr Joel Eymery

  68. Controlled Silicon (001) Surface Periodic Nanopatterning by Direct Wafer Bonding

    Article • January 2006, The Electrochemical Society

    Dr Joel Eymery

  69. Nanoscaled MOSFET Transistors on Strained Si, SiGe, Ge Layers: Some Integration and Electrical Properties Features

    Article • January 2006, The Electrochemical Society

    Dr Joel Eymery

  70. Electronic and optical properties of Si ∕ Si O 2 nanostructures. I. Electron-hole collective processes in single Si ∕ Si O 2 quantum wells

    Article • Physical Review B, November 2005, American Physical Society (APS)

    Dr Joel Eymery

  71. Electronic and optical properties of Si ∕ Si O 2 nanostructures. II. Electron-hole recombination at the Si ∕ Si O 2 quantum-well–quantum-dot transition

    Article • Physical Review B, November 2005, American Physical Society (APS)

    Dr Joel Eymery

  72. (001) silicon surfacial grain boundaries obtained by direct wafer bonding process: accurate control of the structure before bonding

    Article • The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics, July 2005, Taylor & Francis

    Dr Joel Eymery

  73. Photoluminescence of nanometric single silicon quantum wells

    Article • Optical Materials, February 2005, Elsevier

    Dr Joel Eymery

  74. Electron hole liquid in silicon single quantum wells

    Article • Optical Materials, February 2005, Elsevier

    Dr Joel Eymery

  75. Germanium growth on nanopatterned surface studied by STM

    Article • Journal of Crystal Growth, February 2005, Elsevier

    Dr Joel Eymery

  76. Growth of Ge on Si(001) studied in situ by grazing incidence small angle X-ray scattering

    Article • Journal of Crystal Growth, February 2005, Elsevier

    Dr Joel Eymery

  77. Nanometric artificial structuring of semiconductor surfaces for crystalline growth

    Article • Comptes Rendus Physique, January 2005, Elsevier

    Dr Joel Eymery

  78. Controlled surface nanopatterning with buried dislocation arrays

    Article • Surface Science, November 2003, Elsevier

    Dr Joel Eymery

  79. STM study of ultra-thin (<2 nm) silicon oxide

    Article • Journal of Non-Crystalline Solids, July 2003, Elsevier

    Dr Joel Eymery

  80. Buried hydrophobic silicon bonding studied by high-energy x-ray reflectivity

    Article • Journal of Physics D Applied Physics, April 2003, Institute of Physics Publishing

    Dr Joel Eymery

  81. Grazing incidence x-ray scattering investigation of Si surface patterned with buried dislocation networks

    Article • Applied Physics Letters, April 2003, American Institute of Physics

    Dr Joel Eymery

  82. GIXRD of nanoscale strain patterning in wafer bonding

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, January 2003, Elsevier

    Dr Joel Eymery

  83. Toward two-dimensional self-organization of nanostructures using wafer bonding and nanopatterned silicon surfaces

    Article • IEEE Journal of Quantum Electronics, August 2002, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Joel Eymery

  84. Ordering of Ge quantum dots with buried Si dislocation networks

    Article • Applied Physics Letters, April 2002, American Institute of Physics

    Dr Joel Eymery

  85. Dislocation strain field in ultrathin bonded silicon wafers studied by grazing incidence x-ray diffraction

    Article • April 2002, American Physical Society (APS)

    Dr Joel Eymery

  86. Large and small angle x-ray scattering studies of Si/SiGe superlattices grown by gas-source molecular beam epitaxy

    Article • Semiconductor Science and Technology, February 2002, Institute of Physics Publishing

    Dr Joel Eymery

  87. Accurate control of the misorientation angles in direct wafer bonding

    Article • Applied Physics Letters, February 2002, American Institute of Physics

    Dr Joel Eymery

  88. Stress measurements in thin zirconia films at 300°C using synchrotron radiation

    Article • Journal of Neutron Research, December 2001, CrossRef

    Dr Joel Eymery

  89. High-energy x-ray reflectivity of buried interfaces created by wafer bonding

    Article • March 2001, American Physical Society (APS)

    Dr Joel Eymery

  90. X-ray reflectivity of silicon on insulator wafers

    Article • Materials Science in Semiconductor Processing, February 2001, Elsevier

    Dr Joel Eymery

  91. Investigations of Buried Interfaces Using High Energy X-Ray Reflectivity

    Article • MRS Proceedings, January 2001, Cambridge University Press

    Dr Joel Eymery

  92. Dislocation Networks Strain Fields Induced By Si Wafer Bonding.

    Article • MRS Proceedings, January 2001, Cambridge University Press

    Dr Joel Eymery

  93. Nanometric patterning with ultrathin twist bonded silicon wafers

    Article • Thin Solid Films, December 2000, Elsevier

    Dr Joel Eymery

  94. Détermination de contraintes résiduelles en incidence rasante. Apport du rayonnement synchrotron

    Article • Journal de Physique IV (Proceedings), September 2000, EDP Sciences

    Dr Joel Eymery

  95. Strain and Morphology in Nano-Patterned Semiconductors

    Article • Acta Crystallographica Section A Foundations of Crystallography, August 2000, International Union of Crystallography

    Dr Joel Eymery

  96. Grazing incidence X-ray studies of twist-bonded Si/Si and Si/SiO2 interfaces

    Article • Physica B Condensed Matter, June 2000, Elsevier

    Dr Joel Eymery

  97. Interface dilution and morphology of CdTe/MnTe superlattices studied by small- and large-angle x-ray scattering

    Article • Journal of Applied Physics, May 2000, American Institute of Physics

    Dr Joel Eymery

  98. Ultra thin silicon films directly bonded onto silicon wafers

    Article • Materials Science and Engineering B, April 2000, Elsevier

    Dr Joel Eymery

  99. X-ray reflectivity of ultrathin twist-bonded silicon wafers

    Article • Applied Physics Letters, November 1999, American Institute of Physics

    Dr Joel Eymery

  100. Localized destructive interference in X-ray specular reflectivity

    Article • Journal of Applied Crystallography, October 1999, International Union of Crystallography

    Dr Joel Eymery

  101. Equilibrium Shape of Steps and Islands on Polar II-VI Semiconductors Surfaces

    Article • Physical Review Letters, September 1999, American Physical Society (APS)

    Dr Joel Eymery

  102. Large and small angle x-ray scattering studies of CdTe/MgTe superlattices

    Article • Journal of Applied Physics, August 1999, American Institute of Physics

    Dr Joel Eymery

  103. UTSI/CFFF MHD program completion and related activity

    Article • July 1999, Office of Scientific and Technical Information (OSTI)

    Dr Joel Eymery

  104. Interface roughness correlation in CdTe/CdZnTe strained quantum wells

    Article • Journal of Crystal Growth, February 1998, Elsevier

    Dr Joel Eymery

  105. Interface dilution and morphology of CdTe/MnTe superlattices studied by small angle X-ray scattering

    Article • Journal of Crystal Growth, February 1998, Elsevier

    Dr Joel Eymery

  106. Epitaxial growth of CdTe(0 0 1) studied by scanning tunnelling microscopy

    Article • Journal of Crystal Growth, February 1998, Elsevier

    Dr Joel Eymery

  107. X-ray-diffraction study of the lattice distortions induced by a fractional monolayer:ZnTe embedded in vicinal CdTe(001)

    Article • June 1997, American Physical Society (APS)

    Dr Joel Eymery

  108. Anisotropic relaxation during the first stages of the growth of ZnTe/(001) CdTe strained layers studied by reflection high energy electron diffraction

    Article • Applied Physics Letters, June 1995, American Institute of Physics

    Dr Joel Eymery

  109. Extended synchrotron X-ray reflectivity study of a Sm-based layer buried into CdTe(001)

    Article • Surface Science, April 1995, Elsevier

    Dr Joel Eymery

  110. Investigation of the epitaxial growth mechanism of ZnTe on (001) CdTe

    Article • Journal of Applied Physics, April 1995, American Institute of Physics

    Dr Joel Eymery

  111. In situ characterization of rare earth-CdTe heterostructures by ion beam analysis

    Article • Thin Solid Films, September 1994, Elsevier

    Dr Joel Eymery

  112. Study of the first‐stage relaxation in ZnTe/(001)CdTe strained layers

    Article • Applied Physics Letters, June 1994, American Institute of Physics

    Dr Joel Eymery

  113. A first-principles phase stability study on the Au-Ni system

    Article • Journal of Physics Condensed Matter, February 1994, Institute of Physics Publishing

    Dr Joel Eymery

  114. Molecular beam epitaxial growth of Au(110) layers on MgO(110) substrates

    Article • Applied Surface Science, June 1993, Elsevier

    Dr Joel Eymery

  115. Au-Ni solid solutions studied by numerical relaxation

    Article • Journal de Physique I, March 1993, EDP Sciences

    Dr Joel Eymery

  116. MBE growth of Fe(211)/Au(110) multilayers on MgO(110) substrates

    Article • Journal of Magnetism and Magnetic Materials, March 1993, Elsevier

    Dr Joel Eymery

  117. Structure of a Ni-Au Multilayer: A HREM Study

    Article • Materials Science Forum, January 1993, Trans Tech Publications

    Dr Joel Eymery

  118. Structural and magnetic characterization of Co/Au(100) epitaxial multilayers

    Article • Journal de Physique IV (Proceedings), December 1992, EDP Sciences

    Dr Joel Eymery

  119. An Auger depth profile analysis of a sputtered Fe-Ti multilayer structure

    Article • Applied Surface Science, February 1991, Elsevier

    Dr Joel Eymery

  120. The Growth of Ni Overlayers on Au(100) Buffers Deposited on GaAs(100) and MgO(100) Substrates.

    Article • MRS Proceedings, January 1991, Cambridge University Press

    Dr Joel Eymery

  121. Surface segregation in binary Cu-Ni and Pt-Ni alloys using Monte Carlo simulation

    Article • Surface Science, May 1990, Elsevier

    Dr Joel Eymery

  122. Growth of Organised Nano-Objects on Prepatterned Surfaces

    Article • Springer Science + Business Media

    Dr Joel Eymery

  123. Stress and Strain Measurement in Stressed Silicon Lines

    Article • Springer Science + Business Media

    Dr Joel Eymery

  124. Optical properties of ultra thin single Si/SiO/sub 2/ quantum wells

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Joel Eymery