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  1. The Ir-n-GaAs Schottky barrier contacts made by electrochemical deposition
  2. Investigation of special features of parameters of Schottky barrier contacts caused by a nonlinear bias dependence of the barrier height
  3. Influence of the nonlinear bias dependence of the barrier height on measured Schottky-barrier contact parameters
  4. About the determination of the Schottky barrier height with the C-V method