All Stories

  1. Strain related relaxation of the GaAs-like Raman mode selection rules in hydrogenated GaAs1−xNx layers

    Article • Journal of Applied Physics, May 2019, American Institute of Physics

    Giorgio Pettinari, Dr Silvia Rubini, Enrico Giulotto

  2. Plasmon-assisted bandgap engineering in dilute nitrides

    Article • Nanophotonics, April 2019, De Gruyter

    Giorgio Pettinari

  3. Carrier masses and band-gap temperature sensitivity in Ga(AsBi) alloys

    Article • Semiconductor Science and Technology, June 2015, Institute of Physics Publishing

    Giorgio Pettinari

  4. Bi-induced p-type conductivity in nominally undoped Ga(AsBi)

    Article • Applied Physics Letters, February 2012, American Institute of Physics

    Giorgio Pettinari