All Stories

  1. Materials characterisation and modelling on the small scale
  2. Stranski–Krastanov growth of (Si)Ge/Si(001): transmission electron microscopy compared with segregation theory
  3. Accurate measurement of atomic segregation to grain boundaries or to planar faults by analytical transmission electron microscopy
  4. Electron microscopy of quantum dots
  5. What environmental transmission electron microscopy measures and how this links to diffusivity: thermodynamics versus kinetics
  6. Twinning in GaAs nanowires on patterned GaAs(111)B
  7. Scanning transmission electron microscopy measurement of bismuth segregation in thin Ga(As,Bi) layers grown by molecular beam epitaxy
  8. The influence of emitter conditioning on the performance of a tungsten <111> cold field emission gun operating at 300 kV
  9. Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)
  10. How to best measure atomic segregation to grain boundaries by analytical transmission electron microscopy
  11. Towards the structure of rare earth luminescence centres – terbium doped aluminium nitride as an example system
  12. Calibration of thickness-dependent k -factors for germanium X-ray lines to improve energy-dispersive X-ray spectroscopy of SiGe layers in analytical transmission electron microscopy
  13. Study of site controlled quantum dot formation on focused ion beam patterned GaAs substrate
  14. 18th Microscopy of Semiconducting Materials Conference (MSM XVIII)
  15. Investigation of growth of thin layers of perovskite on native silicon dioxide by a combination of atomic force microscopy and transmission electron microscopy
  16. GaN-based radial heterostructure nanowires grown by MBE and ALD
  17. Homogeneous Array of Nanowire-Embedded Quantum Light Emitters
  18. Controlled Quantum Dot Formation on Focused Ion Beam-Patterned GaAs Substrates
  19. Aberration Corrected High-Resolution Transmission and Scanning Transmission Electron Microscopy of Thin Perovskite Layers
  20. The Stranski-Krastanow transition in SiGe epitaxy investigated by scanning transmission electron microscopy
  21. Lattice resolved annular dark-field scanning transmission electron microscopy of (Al, In)GaN/GaN layers for measuring segregation with sub-monolayer precision
  22. Study of controlled quantum dot formation on focused ion beam patterned GaAs substrates
  23. Characterization of thickness, elemental distribution and band-gap properties in AlGaN/GaN quantum wells by aberration-corrected TEM/STEM
  24. Self-consistent absorption corrections for low-energy X-ray lines in energy-dispersive X-ray spectroscopy
  25. Electron Microscopy and Analysis Group Conference 2011 (EMAG 2011)
  26. Configuring a 300kV cold field-emission gun for optimum analytical performance
  27. Performance of a cold-field emission gun double aberration corrected TEM/STEM at 80kV
  28. Measurement of the Al content in AlGaN epitaxial layers by combined energy-dispersive X-ray and electron energy-loss spectroscopy in a transmission electron microscope
  29. Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates
  30. Characterization of InGaN/GaN epitaxial layers by aberration corrected TEM/STEM
  31. Nanoscale EELS analysis of elemental distribution and band-gap properties in AlGaN epitaxial layers
  32. Accurate calibration for the quantification of the Al content in AlGaN epitaxial layers by energy-dispersive X-ray spectroscopy in a Transmission Electron Microscope
  33. GaAsBi atomic surface order and interfacial roughness observed by STM and TEM
  34. Comparison of the contrast in conventional and lattice resolved ADF STEM images of InGaAs/GaAs structures using different camera lengths
  35. Quantification of series of X-ray spectra taken at different tilts in analytical transmission electron microscopy
  36. 17th International Conference on Microscopy of Semiconducting Materials 2011
  37. Investigation of boron implantation into silicon by quantitative energy-filtered transmission electron microscopy
  38. Analysis of partially oxidised epitaxial silicon mono-layers on germanium virtual substrates using aberration corrected scanning transmission electron microscopy
  39. A TEM study of Ge-on-(111)Si structures for potential use in high performance PMOS device technology
  40. Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN–AlGaN axial heterostructure nanowires
  41. Room-Temperature GaAs/AlGaAs Quantum Cascade Lasers Grown by Metal–Organic Vapor Phase Epitaxy
  42. Room Temperature GaAs/AlGaAs Quantum Cascade Lasers with InGaP and InAlP Waveguides
  43. High temperature ∼4 [micro sign]m In0.7Ga0.3As/In0.34Al0.66As quantum cascade lasers grown by MOVPE
  44. STEM imaging of InP/AlGaInP quantum dots
  45. Electron microscopy of AlGaN-based multilayers for UV laser devices
  46. Study of the effect of annealing of In(Ga)As quantum dots
  47. Measuring the contrast in annular dark field STEM images as a function of camera length
  48. Probe position recovery for ptychographical imaging
  49. An improved approach to quantitative X-ray microanalysis in (S)TEM: Thickness dependent k -factors
  50. Quantification of carbon contamination under electron beam irradiation in a scanning transmission electron microscope and its suppression by plasma cleaning
  51. TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology
  52. Study of annealed InAs/GaAs quantum dot structures
  53. Quantitative investigation of the onset of islanding in strained layer epitaxy of InAs/GaAs by X-ray mapping in STEM
  54. Comparison of experimental and theoretical X-ray intensities from (In)GaAs specimens investigated by energy-dispersive X-ray spectroscopy in a transmission electron microscope
  55. GaN, AlGaN, HfO 2 based radial heterostructure nanowires
  56. TEM analysis of Ge-on-Si MOSFET structures with HfO 2 dielectric for high performance PMOS device technology
  57. 16th International Conference on Microscopy of Semiconducting Materials
  58. Influence of thick crystal effects on ptychographic image reconstruction with moveable illumination
  59. A comparison of transmission electron microscopy methods to measure wetting layer thicknesses to sub-monolayer precision
  60. A simple method to improve the quantification accuracy of energy-dispersive X-ray microanalysis
  61. 1.55 μ m InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer
  62. Electro-Assisted Photo-Luminescence of Colloidal Germanium Nanoparticles
  63. Preliminary Results from the First Monochromated and Aberration Corrected 200-kV Field-Emission Scanning Transmission Electron Microscope
  64. First experimental test of a new monochromated and aberration-corrected 200kV field-emission scanning transmission electron microscope
  65. Linear least-squares fit evaluation of series of analytical spectra from planar defects: extension and possible implementations in scanning transmission electron microscopy
  66. Quantitative microstructural and spectroscopic investigation of inversion domain boundaries in sintered zinc oxide ceramics doped with iron oxide
  67. A Novel Method of Analytical Transmission Electron Microscopy for Measuring Highly Accurately Segregation to Special Grain Boundaries or Planar Interfaces
  68. Laser-Assisted Synthesis of Au−Ag Alloy Nanoparticles in Solution
  69. A new experimental procedure to quantify annular dark field images in scanning transmission electron microscopy
  70. Combinatorial investigation of the isolated nanoparticle to coalescent layer transition in a gradient sputtered gold nanoparticle layer on top of polystyrene
  71. High ultimate tensile stress in nano-grained superelastic NiTi thin films
  72. Structural and magnetic characteristics of FeCo thin films modified by combinatorial ion implantation
  73. Critical assessment of the speckle statistics in fluctuation electron microscopy and comparison to electron diffraction
  74. Photofragmentation of Phase-Transferred Gold Nanoparticles by Intense Pulsed Laser Light
  75. Influence of Intense Pulsed Laser Irradiation on Optical and Morphological Properties of Gold Nanoparticle Aggregates Produced by Surface Acid−Base Reactions
  76. Development of a new analytical electron microscopy technique to quantify the chemistry of planar defects and to measure accurately solute segregation to grain boundaries
  77. Diffusion and segregation effects in doped manganite/titanate heterostructures
  78. Twin Boundaries in Zinc Oxide with Additions of Gallium Oxide
  79. A New Method to Measure Small Amounts of Solute Atoms on Planar Defects and Application to Inversion Domain Boundaries in Doped Zinc Oxide
  80. Structural and doping effects in the half-metallic double perovskite A 2 CrWO 6 ( A = Sr, Ba, and Ca)
  81. Electron energy-loss spectroscopic profiling of thin film structures: 0.39nm line resolution and 0.04eV precision measurement of near-edge structure shifts at interfaces
  82. Stranski-Krastanow transition and epitaxial island growth
  83. Microstructure and magnetoresistance of epitaxial films of the layered perovskite La 2 − 2 x Sr 1 + 2 x Mn 2 O 7 ( x = 0.3 and 0.4)
  84. Measurement of diffusion lengths in quaternary semiconducting thin layers by spectrum imaging
  85. Structure and Chemistry of Basal-Plane Inversion Boundaries in Antimony Oxide-Doped Zinc Oxide
  86. Auger depth profile analysis and EFTEM analysis of annealed Ti/Al-contacts on Si-doped GaN
  87. Thermal Stability of ZnMgSSe/ZnSe Laser Heterostructures
  88. Nature of the Stranski-Krastanow Transition during Epitaxy of InGaAs on GaAs
  89. Epitaxial Island Growth and the Stranski-Krastanow Transition
  90. Diffusion Processes in Strained Silicon Germanium Island Structures
  91. A Study of Sulphur Diffusion in ZnMgSSe/ZnSe Quantum Wells by Energy-Loss Imaging in a Transmission Electron Microscope
  92. Coexistence of clusters, GPB zones, S″-, S′- and S-phases in an Al–0.9% Cu–1.4% Mg alloy
  93. The nature of islanding in the InGaAs / GaAs epitaxial system
  94. A quantitative study of compositional profiles of chemical vapour-deposited strained silicon–germanium/silicon layers by transmission electron microscopy
  95. Development of a technique for a quantitative study of the order and composition of an iron-palladium alloy on the nanometre scale in an electron microscope with imaging filter
  96. Transmission electron microscopy study of Si δ-doped GaAs/AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures
  97. Observation of vertical and lateral Ge segregation in thin undulating SiGe layers on Si by electron energy-loss spectroscopy
  98. Diffusion and Surface Segregation in Thin SiGe/Si Layers Studied by Scanning Transmission Electron Microscopy
  99. Maxwell's Demon and Data Analysis [and Discussion]
  100. A Correlation between Compositional Fluctuations and Surface Undulations in Strained Layer Epitaxy
  101. Detection of random alloy fluctuations in high-resolution transmission electron micrographs of AlGaAs
  102. Quantitative characterization of AlAs/GaAs interfaces by high-resolution transmission electron microscopy along the ?100? and the ?110? projection
  103. Comparing InGaAs and GaAsSb Metamorphic Buffer Layers on GaAs Substrates for InAs Quantum Dots Emitting at 1.55μm
  104. Investigating the Capping of InAs Quantum Dots by InGaAs
  105. The Mechanism of the Stranski-Krastanov Transition
  106. Quantifying the Top-Bottom Effect in Energy-Dispersive X-Ray Spectroscopy of Nanostructures Embedded in Thin Films
  107. Measuring coherence in an electron beam for imaging
  108. Comparison of monochromated electron energy-loss with X-ray absorption near-edge spectra: ELNES vs. XANES
  109. Investigating the influence of dynamic scattering on ptychographical iterative techniques
  110. Simple method to improve quantification accuracy of energy-dispersive X-ray spectroscopy in an analytical transmission electron microscope by specimen tilting
  111. Structural and Compositional Properties of Strain-Symmetrized SiGe/Si Heterostructures
  112. ConceptEM: a new method to quantify solute segregation to interfaces or planar defect structures by analytical TEM and applications to inversion domain boundaries in doped zinc oxide
  113. Thermal stability of ZnMgSSe/ZnSe laser heterostructures