All Stories

  1. Symmetry-dependent interfacial reconstruction to compensate polar discontinuity at perovskite oxide interfaces (LaAlO3/SrTiO3 and LaAlO3/CaTiO3)
  2. Effect of surface hydroxyl coverage on platinum nanoparticles in the oxygen reduction reaction: All-electron density functional theory analysis
  3. Effect of oxygen vacancy on the structural and electronic characteristics of crystalline Zn2SnO4
  4. Ab initio study on the structural characteristics of amorphous Zn2SnO4
  5. Double-layered vertically integrated amorphous-In2Ga2ZnO7 thin-film transistor
  6. Theoretical and experimental studies on the electronic structure of crystalline and amorphous ZnSnO3 thin films
  7. Prediction of atomic structure of Pt-based bimetallic nanoalloys by using genetic algorithm
  8. The Electrical Properties of Asymmetric Schottky Contact Thin-Film Transistors with Amorphous-$\hbox{In}_{2}\hbox{Ga}_{2}\hbox{ZnO}_{7}$
  9. Ab initio atomistic thermodynamics calculations of the initial deposition of epitaxial MgO film on GaAs(001)-β2(2 × 4)
  10. First-Principles Study of the Interfaces between Fe and Transition Metal Carbides
  11. Study on the defects in metal–organic chemical vapor deposited zinc tin oxide thin films using negative bias illumination stability analysis
  12. Thermodynamic stability of various phases of zinc tin oxides from ab initio calculations
  13. Variation in the threshold voltage of amorphous-In2Ga2ZnO7 thin-film transistors by ultrathin Al2O3 passivation layer
  14. Performance Variation According to Device Structure and the Source/Drain Metal Electrode of a-IGZO TFTs
  15. Strain evolution of each type of grains in poly-crystalline (Ba,Sr)TiO3 thin films grown by sputtering
  16. Reduction of Charge Trapping in $\hbox{HfO}_{2}$ Film on Ge Substrates by Atomic Layer Deposition of Various Passivating Interfacial Layers
  17. All-electron scalar relativistic calculations of atomic hydrogen adsorption on cubo-octahedron Pt55 nanoparticles
  18. Density Functional Calculations on the Mechanical Properties of Nitrogen or Oxygen Doped Crystalline Ge2Sb2Te5
  19. Monte Carlo simulations of the structure of Pt-based bimetallic nanoparticles
  20. Ab initioCalculations on the Atomic and Electronic Structures of Oxygen-Doped Hexagonal Ge$_{2}$Sb$_{2}$Te$_{5}$
  21. Vertically integrated submicron amorphous-In2Ga2ZnO7 thin film transistor using a low temperature process
  22. The charge trapping characteristics of Si3N4 and Al2O3 layers on amorphous-indium-gallium-zinc oxide thin films for memory application
  23. Migration of nitrogen in hexagonal Ge2 Sb2 Te5 : An ab-initio study
  24. Properties of Atomic Layer Deposited HfO2 Films on Ge Substrates Depending on Process Temperatures
  25. 유전알고리즘을 이용한 이원계 나노입자의 원자배열 예측
  26. Effects of magnitude and direction of the biaxial compressive strain on the formation and migration of a vacancy in Ge by using density functional theory
  27. Energetics and Interdiffusion at the Cu/Ru(0001) Interface: Density Functional Calculations
  28. First-principles study on the formation of a vacancy in Ge under biaxial compressive strain
  29. Improved properties of Pt–HfO2 gate insulator–ZnO semiconductor thin film structure by annealing of ZnO layer
  30. First-principles calculations on the energetics of nitrogen-doped hexagonal Ge2Sb2Te5
  31. Effects of temperature and tilt angle on the grain boundary structure in silicon oxide: Molecular dynamics study
  32. Predictions on atomic structures of Ti1−xMoxC using combined approach of first-principles calculation and the cluster expansion method
  33. Origin of Ferromagnetism and Long-range Interactions of Cu in GaN:\\Chemical Bonding and Electronegativity Approaches
  34. The energetics of helium and hydrogen atoms in β-SiC: an ab initio approach
  35. Energetics of He and H atoms with vacancies in tungsten: First-principles approach
  36. A first-principles study on the bond characteristics in carbon containing Mo, Ag, or Al impurity atoms
  37. Structure and mechanical properties of Ag-incorporated DLC films prepared by a hybrid ion beam deposition system
  38. Influence of the oxygen concentration of atomic-layer-deposited HfO2 gate dielectric films on the electron mobility of polycrystalline-Si gate transistors
  39. Buffer-layer-free growth of high-quality epitaxial GaN films on 4H-SiC substrate by metal-organic chemical vapor deposition
  40. Pt-Doped Ru Films Prepared by CVD as Electrodes for DRAM Capacitors
  41. Pore-Boundary Separation Behavior during Sintering of Pure and Bi2O3-Doped ZnO Ceramics
  42. Equilibrium Shape of Internal Cavities in Ruby and the Effect of Surface Energy Anisotropy on the Equilibrium Shape
  43. Penetration and characteristics of an intergranular-liquid phase during sintering of CaSi2O5-dropped 8 mol%-yttria-stabilized zirconia estimation by impedance spectroscopy
  44. Influence of Al doping on lattice strain and electrical properties of epitaxial GaN films grown by metalorganic chemical vapor deposition on Al2O3 substrate
  45. Asymmetric growth behavior of selectively grown InP on vicinal (1 0 0) surfaces by low-pressure metal-organic chemical vapor deposition
  46. Equilibrium Shape of Internal Cavities in Sapphire