All Stories

  1. A ternary gate-connected threshold switching thin-film transistor

    Article • Applied Physics Letters, April 2024, American Institute of Physics

    Professor Hwang Cheol Seong

  2. Comprehensive interpretations of thermodynamic and kinetic effects on the phase fractions in Hf1-xZrxO2 by first principle calculations

    Article • Applied Physics Reviews, September 2023, American Institute of Physics

    Professor Hwang Cheol Seong

  3. Improved ferroelectricity in Hf0.5Zr0.5O2 by inserting an upper HfOxNy interfacial layer

    Article • Applied Physics Letters, September 2021, American Institute of Physics

    Professor Hwang Cheol Seong

  4. Study of ferroelectric characteristics of Hf0.5Zr0.5O2 thin films grown on sputtered or atomic-layer-deposited TiN bottom electrodes

    Article • Applied Physics Letters, July 2020, American Institute of Physics

    Professor Hwang Cheol Seong

  5. Investigation of the electronic structure of amorphous SnO film using x-ray absorption spectroscopy

    Article • Applied Physics Letters, February 2020, American Institute of Physics

    Professor Hwang Cheol Seong

  6. A comprehensive study on the mechanism of ferroelectric phase formation in hafnia-zirconia nanolaminates and superlattices

    Article • Applied Physics Reviews, December 2019, American Institute of Physics

    Professor Hwang Cheol Seong

  7. Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2

    Article • The Journal of Chemical Physics, November 2019, American Institute of Physics

    Professor Hwang Cheol Seong

  8. Memristor crossbar array for binarized neural networks

    Article • AIP Advances, April 2019, American Institute of Physics

    Professor Hwang Cheol Seong

  9. Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping

    Article • Journal of Applied Physics, January 2019, American Institute of Physics

    Professor Hwang Cheol Seong

  10. A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2films by pulse-switching measurement

    Article • Nanoscale, January 2016, Royal Society of Chemistry

    Professor Hwang Cheol Seong

  11. Bipolar resistive switching behavior of an amorphous Ge2Sb2Te5thin films with a Te layer

    Article • Nanoscale, January 2015, Royal Society of Chemistry

    Professor Hwang Cheol Seong

  12. Electronic resistance switching in the Al/TiOx/Al structure for forming-free and area-scalable memory

    Article • Nanoscale, January 2015, Royal Society of Chemistry

    Professor Hwang Cheol Seong

  13. Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films

    Article • Journal of Materials Chemistry C, January 2015, Royal Society of Chemistry

    Professor Hwang Cheol Seong

  14. Evolution of the shape of the conducting channel in complementary resistive switching transition metal oxides

    Article • Nanoscale, January 2014, Royal Society of Chemistry

    Professor Hwang Cheol Seong

  15. Effects of O3 and H2O as oxygen sources on the atomic layer deposition of HfO2 gate dielectrics at different deposition temperatures

    Article • Journal of Materials Chemistry C, January 2014, Royal Society of Chemistry

    Professor Hwang Cheol Seong

  16. Impedance spectroscopic analysis on effects of partial oxidation of TiN bottom electrode and microstructure of amorphous and crystalline HfO2 thin films on their bipolar resistive switching

    Article • Nanoscale, January 2014, Royal Society of Chemistry

    Jong-Heun Lee, Professor Hwang Cheol Seong

  17. Chemistry of active oxygen in RuOx and its influence on the atomic layer deposition of TiO2 films

    Article • Journal of Materials Chemistry C, January 2014, Royal Society of Chemistry

    Professor Hwang Cheol Seong

  18. Study on the defects in metal–organic chemical vapor deposited zinc tin oxide thin films using negative bias illumination stability analysis

    Article • Journal of Materials Chemistry C, January 2013, Royal Society of Chemistry

    Professor Hwang Cheol Seong, Dr Jung-Hae Choi