All Stories

  1. Modification of Schottky barrier properties of Al/p-type Si Schottky rectifiers with graphene-oxide-doped poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) interlayer

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, March 2017, American Vacuum Society

    Inapagundla Jyothi

  2. Modification of Schottky Barrier Properties of Ti/p-type InP Schottky Diode by Polyaniline (PANI) Organic Interlayer

    Article • JSTS Journal of Semiconductor Technology and Science, October 2016, The Institute of Electronics Engineers of Korea

    Inapagundla Jyothi

  3. Temperature-dependent current–voltage characteristics of Se Schottky contact to n-type Ge

    Article • Thin Solid Films, November 2013, Elsevier

    Inapagundla Jyothi

  4. Temperature Dependency of Schottky Barrier Parameters of Ti Schottky Contacts to Si-on-Insulator

    Article • MATERIALS TRANSACTIONS, January 2013, Japan Institute of Metals

    Inapagundla Jyothi

  5. Temperature-dependent Schottky barrier characteristics of Cu∕Au Schottky contacts to n-InP

    Article • January 2011, American Institute of Physics

    Inapagundla Jyothi

  6. Double Gaussian Distribution of Inhomogeneous Barrier Height in Ru∕Pt∕n-GaN Schottky Barrier Diodes

    Article • January 2011, American Institute of Physics

    Inapagundla Jyothi