All Stories

  1. Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs

    Article • Solid-State Electronics, December 2014, Elsevier

    Professor Tetsuya Suemitsu

  2. Current collapse suppression in AlGaN/GaN HEMTs by means of slant field plates fabricated by multi-layer SiCN

    Article • Solid-State Electronics, November 2014, Elsevier

    Professor Tetsuya Suemitsu

  3. Improved breakdown voltage and RF characteristics in AlGaN/GaN high-electron-mobility transistors achieved by slant field plates

    Article • Applied Physics Express, August 2014, Japan Society of Applied Physics

    Professor Tetsuya Suemitsu

  4. Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs

    Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  5. Site-Selective Epitaxy of Graphene on Si Wafers

    Article • Proceedings of the IEEE, July 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  6. High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique

    Article • Proceedings of the IEEE, July 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  7. InGaAs HEMTs with T‐gate electrodes formed by multi‐layer SiCN molds

    Article • physica status solidi c, February 2013, Wiley

    Professor Tetsuya Suemitsu

  8. AlGaN/GaN MIS‐gate HEMTs with SiCN gate stacks

    Article • physica status solidi c, February 2013, Wiley

    Professor Tetsuya Suemitsu

  9. Nonresonant Detection of Terahertz Radiation in High-Electron-Mobility Transistor Structure Using InAlAs/InGaAs/InP Material Systems at Room Temperature

    Article • Journal of Nanoscience and Nanotechnology, August 2012, American Scientific Publishers

    Professor Tetsuya Suemitsu

  10. InGaAs HEMTs with T‐gate electrodes fabricated using HMDS SiN mold

    Article • physica status solidi c, December 2011, Wiley

    Professor Tetsuya Suemitsu

  11. Investigation of Graphene Field Effect Transistors with Al 2 O 3 Gate Dielectrics Formed by Metal Oxidation

    Article • Japanese Journal of Applied Physics, July 2011, Japan Society of Applied Physics

    Professor Tetsuya Suemitsu

  12. Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device

    Article • Japanese Journal of Applied Physics, July 2011, Japan Society of Applied Physics

    Professor Tetsuya Suemitsu

  13. Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications

    Article • Japanese Journal of Applied Physics, July 2011, Japan Society of Applied Physics

    Professor Tetsuya Suemitsu

  14. Investigation of Graphene Field Effect Transistors with Al 2 O 3 Gate Dielectrics Formed by Metal Oxidation

    Article • Japanese Journal of Applied Physics, July 2011, Japan Society of Applied Physics

    Professor Tetsuya Suemitsu

  15. Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device

    Article • Japanese Journal of Applied Physics, July 2011, Japan Society of Applied Physics

    Professor Tetsuya Suemitsu

  16. Device loading effect on nonresonant detection of terahertz radiation in dual grating gate plasmon‐resonant structure using InGaP/InGaAs/GaAs material systems

    Article • physica status solidi c, January 2011, Wiley

    Professor Tetsuya Suemitsu

  17. Graphene/SiC/Si FETs with SiCN Gate Stack

    Article • January 2011, The Electrochemical Society

    Professor Tetsuya Suemitsu

  18. GaAs- and InP-Based High-Electron-Mobility Transistors

    Article • January 2011, Elsevier

    Professor Tetsuya Suemitsu

  19. Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications

    Article • Journal of Materials Chemistry, January 2011, Royal Society of Chemistry

    Professor Tetsuya Suemitsu

  20. Impact of T‐gate electrode on gate capacitance in In0.7Ga0.3As HEMTs

    Article • physica status solidi c, November 2010, Wiley

    Professor Tetsuya Suemitsu

  21. Epitaxial graphene top-gate FETs on silicon substrates

    Article • Solid-State Electronics, October 2010, Elsevier

    Professor Tetsuya Suemitsu

  22. Epitaxial graphene field-effect transistors on silicon substrates

    Article • Solid-State Electronics, September 2010, Elsevier

    Professor Tetsuya Suemitsu

  23. Room temperature terahertz detection in high-electron-mobility transistor structure using InAlAs/InGaAs/InP material systems

    Article • September 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  24. Ambipolar Behavior in Epitaxial Graphene-Based Field-Effect Transistors on Si Substrate

    Article • Japanese Journal of Applied Physics, June 2010, Japan Society of Applied Physics

    Professor Tetsuya Suemitsu

  25. Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates

    Article • Japanese Journal of Applied Physics, April 2010, Japan Society of Applied Physics

    Professor Tetsuya Suemitsu

  26. Optoelectronic application of multi-layer epitaxial graphene on a Si substrate

    Article • January 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  27. Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems

    Article • IEICE Transactions on Electronics, January 2010, Institute of Electronics, Information and Communications Engineers (IEICE)

    Professor Tetsuya Suemitsu

  28. Epitaxial graphene top-gate FETs on silicon substrates

    Article • December 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  29. Terahertz plasmon-resonant microship emitters and their possible sensing and spectroscopic applications

    Article • October 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  30. Epitaxial graphene field effect transistors on silicon substrates

    Article • September 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  31. Analysis of Fringing Effect on Resonant Plasma Frequency in Plasma Wave Devices

    Article • Japanese Journal of Applied Physics, April 2009, Japan Society of Applied Physics

    Professor Tetsuya Suemitsu

  32. Analysis of Gate Delay Scaling in In 0.7 Ga 0.3 As-Channel High Electron Mobility Transistors

    Article • Japanese Journal of Applied Physics, April 2009, Japan Society of Applied Physics

    Professor Tetsuya Suemitsu

  33. An Optically Clocked Transistor Array for High-Speed Asynchronous Label Swapping: 40 Gb/s and Beyond

    Article • Journal of Lightwave Technology, March 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  34. Frequency performance of plasmawave devices for THZ applications and the role of fringing effects

    Article • March 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  35. Analysis of Intrinsic and Parasitic Gate Delay of InGaAs HEMTs

    Article • January 2008, The Electrochemical Society

    Professor Tetsuya Suemitsu

  36. Ultrafast Optoelectronic Switching of an Optically Clocked Transistor Array

    Article • August 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  37. Enhanced Gate Swing in InP HEMTs With High Threshold Voltage by Means of InAlAsSb Barrier

    Article • IEEE Electron Device Letters, August 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  38. Development of solitons in composite right- and left-handed transmission lines periodically loaded with Schottky varactors

    Article • Journal of Applied Physics, July 2007, American Institute of Physics

    Professor Tetsuya Suemitsu

  39. Novel Plasmon-Resonant Terahertz-Wave Emitter Using a Double-Decked HEMT Structure

    Article • June 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  40. InP HEMT Technology for High-Speed Logic and Communications

    Article • IEICE Transactions on Electronics, May 2007, Institute of Electronics, Information and Communications Engineers (IEICE)

    Professor Tetsuya Suemitsu

  41. Recent achievements in the reliability of InP-based HEMTs

    Article • Thin Solid Films, March 2007, Elsevier

    Professor Tetsuya Suemitsu

  42. SAW Filters Composed of Interdigital Schottky and Ohmic Contacts on AlGaN/GaN Heterostructures

    Article • IEEE Electron Device Letters, February 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  43. Error-free label swapping of asynchronous optical packets with multifunctional optically clocked transistor array

    Article • Electronics Letters, January 2007, the Institution of Engineering and Technology (the IET)

    Professor Tetsuya Suemitsu

  44. A 40-Gb/s Self-Clocked Bidirectional Serial/Parallel Converter for Asynchronous Label Swapping

    Article • IEEE Photonics Technology Letters, January 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  45. All-Optical and Optoelectronic Serial-to-Parallel Conversion of High-Speed, Asynchronous Optical Packets

    Article • October 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  46. Label Swapping of an Asynchronous Burst Optical Packet Stream with a Self-Clocked Optically Clocked Transistor Array

    Article • September 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  47. Interdigital transducers with control gates on AlGaN∕GaN heterostructures

    Article • Applied Physics Letters, July 2006, American Institute of Physics

    Professor Tetsuya Suemitsu

  48. AlGaN/GaN Field-Effect Surface Acoustic Wave Filters with >40-dB Isolation for Monolithic Integration with HEMTs

    Article • June 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  49. Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short‐gate HEMTs

    Article • physica status solidi c, June 2006, Wiley

    Professor Tetsuya Suemitsu

  50. Dual‐gate AlGaN/GaN high‐electron‐mobility transistors with short gate length for high‐power mixers

    Article • physica status solidi c, February 2006, Wiley

    Professor Tetsuya Suemitsu

  51. 40-Gb/s serial-to-parallel and parallel-to-serial conversion with an optically clocked transistor array

    Article • January 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  52. An optically clocked transistor array (OCTA) for 40-Gb/s, bidirectional serial-to-parallel conversion of asynchronous burst optical packets

    Article • IEICE Electronics Express, January 2006, Institute of Electronics, Information and Communications Engineers (IEICE)

    Professor Tetsuya Suemitsu

  53. AlGaN/GaN Dual-Gate HEMT Mixers for 24 GHz Pulse-Modulation

    Article • January 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  54. Self-clocked serial-to-parallel and parallel-to-serial conversion with an optically clocked transistor array

    Article • January 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  55. Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate

    Article • IEICE Electronics Express, January 2006, Institute of Electronics, Information and Communications Engineers (IEICE)

    Professor Tetsuya Suemitsu

  56. Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire Substrates

    Article • Japanese Journal of Applied Physics, December 2005, Japan Society of Applied Physics

    Professor Tetsuya Suemitsu

  57. Growth of InP high electron mobility transistor structures with Te doping

    Article • Journal of Crystal Growth, May 2005, Elsevier

    Professor Tetsuya Suemitsu

  58. Hydrogen Sensitivity of InP HEMTs With WSiN-Based Gate Stack

    Article • IEEE Transactions on Electron Devices, March 2005, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  59. Intrinsic Transit Delay and Effective Electron Velocity of AlGaN/GaN High Electron Mobility Transistors

    Article • Japanese Journal of Applied Physics, January 2005, Japan Society of Applied Physics

    Professor Tetsuya Suemitsu

  60. An Intrinsic Delay Extraction Method for Schottky Gate Field Effect Transistors

    Article • IEEE Electron Device Letters, October 2004, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  61. Quantum electronics and compound semiconductors HEMTs: physics and now technologies

    Article • January 2004, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  62. Correlation between current–voltage characteristics and dislocations evaluated with submicrometer Schottky contacts on n-GaN grown by metalorganic chemical vapor deposition

    Article • Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena, January 2003, American Vacuum Society

    Professor Tetsuya Suemitsu

  63. 30-nm two-step recess gate InP-Based InAlAs/InGaAs HEMTs

    Article • IEEE Transactions on Electron Devices, October 2002, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  64. Optical study of high-biased AlGaN/GaN high-electron-mobility transistors

    Article • Journal of Applied Physics, July 2002, American Institute of Physics

    Professor Tetsuya Suemitsu

  65. Influence of Hole Accumulation on Source Resistance, Kink Effect and On-State Breakdown of InP-Based High Electron Mobility Transistors: Light Irradiation Study

    Article • Japanese Journal of Applied Physics, February 2002, Japan Society of Applied Physics

    Professor Tetsuya Suemitsu

  66. Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs

    Article • Microelectronics Reliability, January 2002, Elsevier

    Professor Tetsuya Suemitsu

  67. Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors

    Article • Applied Physics Letters, August 2001, American Institute of Physics

    Professor Tetsuya Suemitsu

  68. Correlation between current–voltage characteristics and dislocations for n-GaN Schottky contacts

    Article • Applied Physics Letters, June 2001, American Institute of Physics

    Professor Tetsuya Suemitsu

  69. Frequency Dispersion in Drain Conductance of InAlAs/InGaAs Hight-Electron Mobility Transisters (HEMTs) and Its Relationship with Impact Ionization

    Article • Japanese Journal of Applied Physics, April 2001, Japan Society of Applied Physics

    Professor Tetsuya Suemitsu

  70. Parasitic effects and long term stability of InP-based HEMTs

    Article • Microelectronics Reliability, August 2000, Elsevier

    Professor Tetsuya Suemitsu

  71. Depletion- and enhancement-mode modulation-doped field-effect transistors for ultrahigh-speed applications: an electrochemical fabrication technology

    Article • IEEE Transactions on Electron Devices, January 2000, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  72. Optical Characterization of Impact Ionization in Flip-Chip-Bonded InP-Based High Electron Mobility Transistors

    Article • Japanese Journal of Applied Physics, October 1999, Japan Society of Applied Physics

    Professor Tetsuya Suemitsu

  73. Short gate-length InAlAs/InGaAs MODFETs with asymmetry gate-recess grooves: electrochemical fabrication and performance

    Article • Solid-State Electronics, August 1999, Elsevier

    Professor Tetsuya Suemitsu

  74. High-performance 0.1-μm gate enhancement-mode InAlAs/InGaAs HEMT's using two-step recessed gate technology

    Article • IEEE Transactions on Electron Devices, June 1999, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  75. An 0.03 μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz f/sub T/ and 2 S/mm extrinsic transconductance

    Article • IEEE Electron Device Letters, May 1999, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  76. Modulation-doped field-effect transistors with an 8-nm InGaAs/InAs/InGaAs quantum well

    Article • IEEE Electron Device Letters, March 1999, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  77. Highly Stable Device Characteristics of InP-Based Enhancement-Mode High Electron Mobility Transistors with Two-Step-Recessed Gates

    Article • Japanese Journal of Applied Physics, February 1999, Japan Society of Applied Physics

    Professor Tetsuya Suemitsu

  78. High-Resolution Scanning Electron Microscopy Observation of Electrochemical Etching in the Formation of Gate Grooves for InP-Based Modulation-Doped Field-Effect Transistors

    Article • Japanese Journal of Applied Physics, February 1999, Japan Society of Applied Physics

    Professor Tetsuya Suemitsu

  79. 30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff Frequency

    Article • Japanese Journal of Applied Physics, February 1999, Japan Society of Applied Physics

    Professor Tetsuya Suemitsu

  80. Impact of nonlinear drain resistance in bias-stressed InAlAs/InGaAs HEMTs

    Article • Electronics Letters, January 1999, the Institution of Engineering and Technology (the IET)

    Professor Tetsuya Suemitsu

  81. Self-compensation of short-channel effects in sub-0.1-μm InAlAs/InGaAs MODFETs by electrochemical etching

    Article • IEEE Electron Device Letters, December 1998, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  82. Electrochemically induced asymmetrical etching in InAlAs/InGaAs heterostructures for MODFET gate-groove fabrication

    Article • Journal of Electronic Materials, July 1998, Springer Science + Business Media

    Professor Tetsuya Suemitsu

  83. Improved Recessed-Gate Structure for Sub-0.1-µm-Gate InP-Based High Electron Mobility Transistors

    Article • Japanese Journal of Applied Physics, March 1998, Japan Society of Applied Physics

    Professor Tetsuya Suemitsu

  84. Impact of subchannel design on DC and RF performance of 0.1 [micro sign]m MODFETs with InAs-inserted channel

    Article • Electronics Letters, January 1998, the Institution of Engineering and Technology (the IET)

    Professor Tetsuya Suemitsu

  85. Improving threshold-voltage uniformity of 0.1 [micro sign]m InP-based MODFETs with different gate layouts

    Article • Electronics Letters, January 1998, the Institution of Engineering and Technology (the IET)

    Professor Tetsuya Suemitsu

  86. An analysis of the kink phenomena in InAlAs/InGaAs HEMT's using two-dimensional device simulation

    Article • IEEE Transactions on Electron Devices, January 1998, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  87. Impact of two-step-recessed gate structure on RF performance of InP-based HEMTs

    Article • Electronics Letters, January 1998, the Institution of Engineering and Technology (the IET)

    Professor Tetsuya Suemitsu

  88. Kink modification using body contact bias in InP based InAlAs/InGaAs HEMTs

    Article • Electronics Letters, January 1996, the Institution of Engineering and Technology (the IET)

    Professor Tetsuya Suemitsu

  89. Body contacts in InP-based InAlAs/InGaAs HEMTs and their effects on breakdown voltage and kink suppression

    Article • Electronics Letters, January 1995, the Institution of Engineering and Technology (the IET)

    Professor Tetsuya Suemitsu

  90. Quantum, power and compound semiconductor devices high-speed compound semiconductor devices for logic and communications

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  91. Hydrogen sensitivity of InP HEMTs with WSiN-based gate stack

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  92. Effective length of high-field region in InGaAs-based lattice-matched HEMTs

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  93. Reliability study of parasitic source and drain resistances of InP-based HEMTs

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  94. Electrochemical etching in wet-chemical gate recess for InAlAs/InGaAs heterojunction FETs

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  95. Mechanism and structural dependence of kink phenomena in InAlAs/InGaAs HEMTs

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  96. Enhancement of weak impact ionization in InAlAs/InGaAs HEMTs induced by surface traps: simulation and experiments

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  97. 30-nm-gate InAlAs/InGaAs HEMTs lattice-matched to InP substrates

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  98. Hydrogen sensitivity of InP HEMTs with a thick Ti-layer in the Ti/Pt/Au gate stack

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  99. Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  100. Ultrahigh-speed InP-based D- and E-mode MODFETs with ultra-short electrochemically-recessed gate contacts

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  101. High-performance 0.1-μm-gate enhancement-mode InAlAs/InGaAs HEMTs using two-step-recessed gate technology

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu

  102. Influence of hole accumulation on the source resistance, kink effect, and on-state breakdown of InP-based HEMTs: light irradiation study

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Tetsuya Suemitsu