All Stories

  1. Effect of gamma radiation on the electrical properties of Polyaniline/silicon carbide heterojunctions

    Article • Radiation Measurements, December 2014, Elsevier

    Professor Eronides F da Silva Jr

  2. Structural, electronic, vibrational and dielectric properties of selected high-shape Ksemiconductor oxides

    Article • Journal of Physics D Applied Physics, September 2014, Institute of Physics Publishing

    Professor Eronides F da Silva Jr, Luisa Scolfaro, Pablo Borges

  3. Theoretical study of the influence of vacancies in the magnetic stability of V-, Cr-, and Mn-doped SnO2

    Article • Applied Surface Science, February 2013, Elsevier

    Professor Eronides F da Silva Jr

  4. Theoretical luminescence spectra in p-type superlattices based on InGaAsN

    Article • Nanoscale Research Letters, October 2012, Springer Science + Business Media

    Professor Eronides F da Silva Jr

  5. Lattice dynamics of Ga1−xMn x N and Ga1−xMn x As by first-principle calculations

    Article • Nanoscale Research Letters, October 2012, Springer Science + Business Media

    Professor Eronides F da Silva Jr

  6. Study of the oxygen vacancy influence on magnetic properties of Fe- and Co-doped SnO2 diluted alloys

    Article • Nanoscale Research Letters, September 2012, Springer Science + Business Media

    Professor Eronides F da Silva Jr

  7. Effect of H2O2 in passivation of n‐ and p‐type 4H‐SiC surfaces

    Article • physica status solidi (a), February 2012, Wiley

    Professor Eronides F da Silva Jr

  8. Magnetic and electronic properties of Sn1–xCrxO2 diluted alloys

    Article • Materials Science and Engineering B, October 2011, Elsevier

    Professor Eronides F da Silva Jr

  9. Application of Quaternary AlInGaN- Based Alloys for Light Emission Devices

    Article • September 2011, IntechOpen

    Professor Eronides F da Silva Jr

  10. Tailoring the Electrical Properties of ZnO/Polyaniline Heterostructures for Device Applications

    Article • Journal of the Korean Physical Society, May 2011, Korean Physical Society

    Professor Eronides F da Silva Jr

  11. Study of the vertical transport in p-doped superlattices based on group III-V semiconductors

    Article • Nanoscale Research Letters, February 2011, Springer Science + Business Media

    Professor Eronides F da Silva Jr

  12. Electronic and magnetic properties of SnO2/CrO2 thin superlattices

    Article • Nanoscale Research Letters, February 2011, Springer Science + Business Media

    Professor Eronides F da Silva Jr

  13. Spin-polarization effects in homogeneous and non-homogeneous diluted magnetic semiconductor heterostructures

    Article • Nanotechnology, August 2010, Institute of Physics Publishing

    Professor Eronides F da Silva Jr

  14. Potential of a simplified measurement scheme and device structure for a low cost label-free point-of-care capacitive biosensor

    Article • Biosensors and Bioelectronics, December 2009, Elsevier

    Professor Eronides F da Silva Jr

  15. DFT study of the electronic, vibrational, and optical properties of SnO2

    Article • Theoretical Chemistry Accounts, November 2009, Springer Science + Business Media

    Professor Eronides F da Silva Jr

  16. Foreword

    Article • Applied Surface Science, November 2008, Elsevier

    Professor Eronides F da Silva Jr

  17. Enhanced lifetime in porous silicon light-emitting diodes with fluorine doped tin oxide electrodes

    Article • Thin Solid Films, November 2008, Elsevier

    Professor Eronides F da Silva Jr

  18. A feasibility study of a phototransistor for the dosimetry of computerized tomography and stereotactic radiosurgery beams

    Article • Radiation Measurements, February 2008, Elsevier

    Professor Eronides F da Silva Jr

  19. Production of Ball-Lightning-Like Luminous Balls by Electrical Discharges in Silicon

    Article • Physical Review Letters, January 2007, American Physical Society (APS)

    Professor Eronides F da Silva Jr

  20. Nanowire growth on Si wafers by oxygen implantation and annealing

    Article • Applied Surface Science, May 2006, Elsevier

    Professor Eronides F da Silva Jr

  21. Linear optical response of Si 1-x Ge x compounds

    Article • March 2005, SPIE

    Professor Eronides F da Silva Jr

  22. Si- and SiGe- high-k oxide nanostructures for optoelectronic devices

    Article • March 2005, SPIE

    Professor Eronides F da Silva Jr

  23. Feasibility of IR-to-UV detection in SiC/SiO 2 heterostructures

    Article • March 2005, SPIE

    Professor Eronides F da Silva Jr

  24. Molecular UV dosimeters of lanthanide complex thin films: AFM as a function of ultraviolet exposure

    Article • Journal of Alloys and Compounds, October 2002, Elsevier

    Professor Eronides F da Silva Jr

  25. Fabrication of high quality silicon–polyaniline heterojunctions

    Article • Applied Surface Science, May 2002, Elsevier

    Professor Eronides F da Silva Jr

  26. X-Ray Radiation Response of Epitaxial and Nonepitaxial n-6H–SiC Metal-Oxide-Semiconductor Capacitors

    Article • Japanese Journal of Applied Physics, April 2001, Japan Society of Applied Physics

    Professor Eronides F da Silva Jr

  27. Strong exciton energy blue shift in annealed Si/SiO2 single quantum wells

    Article • Applied Surface Science, October 2000, Elsevier

    Professor Eronides F da Silva Jr

  28. A novel fluorinated Eu(III) β-diketone complex as thin film for optical device applications

    Article • Optical Materials, November 1998, Elsevier

    Professor Eronides F da Silva Jr

  29. Post-irradiation dopant passivation in MOS capacitors exposed to high doses of x-rays

    Article • Semiconductor Science and Technology, November 1998, Institute of Physics Publishing

    Professor Eronides F da Silva Jr

  30. Correlation between dopant reduction and interfacial defects in low-energy x-ray-irradiated MOS capacitors

    Article • Semiconductor Science and Technology, August 1997, Institute of Physics Publishing

    Professor Eronides F da Silva Jr

  31. Simulation of the early stages of thin film growth

    Article • Semiconductor Science and Technology, August 1997, Institute of Physics Publishing

    Professor Eronides F da Silva Jr

  32. Time-dependent evolution of SiO2/Si interface traps after repeated radiation damage

    Article • Journal of Applied Physics, September 1988, American Institute of Physics

    Professor Eronides F da Silva Jr

  33. Radiation-induced enhancement of minority-carrier lifetimes in metal/SiO2/Si capacitors having oxides grown in O2 with trichloroethane additive

    Article • Applied Physics Letters, August 1988, American Institute of Physics

    Professor Eronides F da Silva Jr

  34. Equivalence between interface traps in SiO2/Si generated by radiation damage and hot-electron injection

    Article • Applied Physics Letters, February 1988, American Institute of Physics

    Professor Eronides F da Silva Jr

  35. Effects of trichloroethane during oxide growth on radiation-induced interface traps in Metal/SiO2/Si capacitors

    Article • Applied Physics Letters, October 1987, American Institute of Physics

    Professor Eronides F da Silva Jr

  36. Two distinct interface trap peaks in radiation-damaged metal/SiO2/Si structures

    Article • Applied Physics Letters, July 1987, American Institute of Physics

    Professor Eronides F da Silva Jr

  37. Radiation Response of MOS Capacitors Containing Fluorinated Oxides

    Article • IEEE Transactions on Nuclear Science, January 1987, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Eronides F da Silva Jr

  38. Radiation-Induced Interface Traps in Mo/SiO2/Si Capacitors

    Article • IEEE Transactions on Nuclear Science, January 1987, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Eronides F da Silva Jr