All Stories

  1. Quantum Modeling of Enhanced Gate Control in a Nanoscale InAlAs/InGaAs DG-HEMT for millimeter-wave Applications

    Article • IOSR Journal of Electrical and Electronics Engineering, January 2014, IOSR Journals

    Dr Jyotika Jogi

  2. Modeling Quantum Effects In The Channel Of A Nanoscale Symmetric Double Gate InAlAs/InGaAs Double Heterostructure HEMT

    Article • IOSR Journal of Electrical and Electronics Engineering, January 2014, IOSR Journals

    Dr Jyotika Jogi

  3. Impact of Temperature and Indium Composition in the Channel on the Microwave Performance of Single-Gate and Double-Gate InAlAs/InGaAs HEMT

    Article • IEEE Transactions on Nanotechnology, November 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Jyotika Jogi

  4. RF characterization of 100‐nm separate gate InAlAs/InGaAs DG‐HEMT

    Article • Microwave and Optical Technology Letters, August 2013, Wiley

    Dr Jyotika Jogi

  5. Quantum simulation for separate double gate InA1As/InGaAs HEMT

    Article • April 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Jyotika Jogi

  6. Intrinsic admittance parameter for separate gate InA1As/InGaAs DG-HEMT for 100 nm gate length

    Article • April 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Jyotika Jogi

  7. Temperature-Dependent Analytical Model for Microwave and Noise Performance Characterization of $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As/In}_{m} \hbox{Ga}_{1-m}\hbox{As}$

    Article • IEEE Transactions on Device and Materials Reliability, March 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Jyotika Jogi

  8. Eigenenergies of a Nanoscale Symmetric Double Triangular Quantum Well in Double Gate InAlAs/InGaAs HEMT

    Article • January 2013, Atlantis Press

    Dr Jyotika Jogi

  9. Impact of noise temperature constant and diffusion coefficient on the minimum noise figure and minimum noise temperature of InAlAs/InGaAs DGHEMT

    Article • December 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Jyotika Jogi

  10. A novel analytical model for small signal parameter for Separate Gate InAlAs/InGaAs DG-HEMT

    Article • November 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Jyotika Jogi

  11. Nano-modeling of the doping profiles for a symmetric double gate InAlAs/InGaAs/InP HEMT

    Article • November 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Jyotika Jogi

  12. A comprehensive charge control based analysis of the effect of donor-layer doping and donor-layer thickness on the P, R and C noise coefficients of a symmetric tied-gate InAlAs/InGaAs DG-HEMT

    Article • October 2012, SPIE

    Dr Jyotika Jogi

  13. An Accurate Charge-Control-Based Approach for Noise Performance Assessment of a Symmetric Tied-Gate InAlAs/InGaAs DG-HEMT

    Article • IEEE Transactions on Electron Devices, June 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Jyotika Jogi

  14. Simulation of Enhanced Gate Control in a Double Gate Quantum Domain InAlAs/InGaAs/InP HEMT

    Article • March 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Jyotika Jogi

  15. Quantum modeling of electron confinement in double triangular quantum well formed in nanoscale symmetric double-gate InAlAs/InGaAs/InP HEMT

    Article • December 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Jyotika Jogi

  16. A comprehensive analytical approach for the evaluation of the P,R and C noise coefficients of InAlAs/InGaAs DG-HEMT

    Article • November 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Jyotika Jogi

  17. Scattering parameter based modeling and simulation of symmetric tied-gate InAlAs/InGaAs DG-HEMT for millimeter-wave applications

    Article • Solid-State Electronics, September 2011, Elsevier

    Dr Jyotika Jogi

  18. An analytical charge-based drain current model for nano-scale In0.52Al0.48As–In0.53Ga0.47as a separated double-gate HEMT

    Article • Semiconductor Science and Technology, October 2010, Institute of Physics Publishing

    Dr Jyotika Jogi

  19. Modeling of hetero-interface potential and threshold voltage for tied and separate nanoscale InAlAs–InGaAs symmetric double-gate HEMT

    Article • Microelectronics Reliability, December 2009, Elsevier

    Dr Jyotika Jogi

  20. Temperature-dependent characterization of InAlAs/InGaAs/InP LMHEMT for microwave frequency application

    Article • April 2004, SPIE

    Dr Jyotika Jogi

  21. An improved intrinsic small‐signal equivalent circuit model of delta‐doped AlGaAs/InGaAs/GaAs HEMT for microwave frequency applications

    Article • Microwave and Optical Technology Letters, April 2003, Wiley

    Dr Jyotika Jogi

  22. An analytical 2D model for drain-induced barrier lowering in subquarter micrometer gate length InAlAs/InGaAs/InAlAs/InP LMHEMT

    Article • Microelectronics Journal, August 2002, Elsevier

    Dr Jyotika Jogi

  23. A new extrinsic dc model for high speed lattice matched InAlAs/InGaAs/InP HEMT with a predicted 135GHz cut-off frequency

    Article • Microelectronics Journal, December 2001, Elsevier

    Dr Jyotika Jogi

  24. Carrier‐concentration‐dependent low‐field‐mobility model for InAlAs/InGaAs/InP lattice‐matched HEMT for microwave application

    Article • Microwave and Optical Technology Letters, February 2001, Wiley

    Dr Jyotika Jogi