All Stories

  1. Interface atomic structures in a cadmium arsenide/III–V semiconductor heterostructure

    Article • Applied Physics Letters, November 2023, American Institute of Physics

    Susanne Stemmer

  2. Induced superconductivity in the two-dimensional topological insulator phase of cadmium arsenide

    Article • APL Materials, April 2023, American Institute of Physics

    Susanne Stemmer

  3. Universal conductance fluctuations in nanoscale topological insulator devices

    Article • Applied Physics Letters, January 2023, American Institute of Physics

    Susanne Stemmer

  4. Revealing the intrinsic transport properties of antiperovskite Sr3SnO thin films

    Article • Applied Physics Letters, December 2022, American Institute of Physics

    Susanne Stemmer

  5. ν = 0 quantum Hall state in a cadmium arsenide thin film

    Article • APL Materials, September 2022, American Institute of Physics

    Susanne Stemmer

  6. Similarity in the critical thicknesses for superconductivity and ferroelectricity in strained SrTiO3 films

    Article • Applied Physics Letters, July 2022, American Institute of Physics

    Susanne Stemmer

  7. Detecting topological phase transitions in cadmium arsenide films via the transverse magnetoresistance

    Article • Applied Physics Letters, October 2021, American Institute of Physics

    Susanne Stemmer

  8. Molecular beam epitaxy of phase-pure antiperovskite Sr3SnO thin films

    Article • Applied Physics Letters, October 2021, American Institute of Physics

    Susanne Stemmer

  9. Reducing surface depletion of superconducting SrTiO3 films with EuTiO3 capping layers

    Article • Applied Physics Letters, October 2021, American Institute of Physics

    Susanne Stemmer

  10. Quantum Hall effect of the topological insulator state of cadmium arsenide in Corbino geometry

    Article • Applied Physics Letters, June 2021, American Institute of Physics

    Susanne Stemmer, Professor John Edward Bowers

  11. Superconductivity in magnetically doped SrTiO3

    Article • Applied Physics Letters, May 2021, American Institute of Physics

    Susanne Stemmer

  12. Controlling the symmetry of cadmium arsenide films by epitaxial strain

    Article • APL Materials, May 2021, American Institute of Physics

    Susanne Stemmer

  13. Magnetoresistance effects in cadmium arsenide thin films

    Article • Applied Physics Letters, October 2020, American Institute of Physics

    Susanne Stemmer

  14. Carrier mobilities of (001) cadmium arsenide films

    Article • APL Materials, May 2020, American Institute of Physics

    Susanne Stemmer

  15. Measurement and modelling of the saturation velocity of electrons in Barium Stannate

    Article • Applied Physics Letters, August 2019, American Institute of Physics

    Susanne Stemmer, Hareesh Chandrasekar

  16. Field-effect transistors with the three-dimensional Dirac semimetal cadmium arsenide

    Article • Applied Physics Letters, August 2019, American Institute of Physics

    Susanne Stemmer

  17. Tuning bad metal and non-Fermi liquid behavior in a Mott material: Rare-earth nickelate thin films

    Article • Science Advances, November 2015, American Association for the Advancement of Science

    Susanne Stemmer

  18. Temperature-dependence of the Hall coefficient of NdNiO3 thin films

    Article • Applied Physics Letters, October 2013, American Institute of Physics

    Susanne Stemmer

  19. Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties

    Article • Journal of Applied Physics, October 2013, American Institute of Physics

    Susanne Stemmer

  20. Two-dimensional electron gas in a modulation-doped SrTiO3/Sr(Ti, Zr)O3 heterostructure

    Article • Applied Physics Letters, August 2013, American Institute of Physics

    Susanne Stemmer

  21. Extreme charge density SrTiO3/GdTiO3 heterostructure field effect transistors

    Article • Applied Physics Letters, June 2013, American Institute of Physics

    Susanne Stemmer

  22. La-doped SrTiO3 films with large cryogenic thermoelectric power factors

    Article • Applied Physics Letters, May 2013, American Institute of Physics

    Susanne Stemmer

  23. Band offsets in complex-oxide thin films and heterostructures of SrTiO3/LaNiO3 and SrTiO3/GdTiO3 by soft and hard X-ray photoelectron spectroscopy

    Article • Journal of Applied Physics, April 2013, American Institute of Physics

    Susanne Stemmer

  24. Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities

    Article • Applied Physics Letters, January 2013, American Institute of Physics

    Susanne Stemmer

  25. Electric field-tunable BaxSr1−xTiO3 films with high figures of merit grown by molecular beam epitaxy

    Article • Applied Physics Letters, December 2012, American Institute of Physics

    Susanne Stemmer

  26. Quantum oscillations from a two-dimensional electron gas at a Mott/band insulator interface

    Article • Applied Physics Letters, October 2012, American Institute of Physics

    Susanne Stemmer

  27. Modulation doping to control the high-density electron gas at a polar/non-polar oxide interface

    Article • Applied Physics Letters, September 2012, American Institute of Physics

    Susanne Stemmer

  28. Fixed charge in high-k/GaN metal-oxide-semiconductor capacitor structures

    Article • Applied Physics Letters, September 2012, American Institute of Physics

    Susanne Stemmer

  29. Effects of doping on the lattice parameter of SrTiO3

    Article • Applied Physics Letters, June 2012, American Institute of Physics

    Susanne Stemmer

  30. Electronic structure of delta-doped La:SrTiO3 layers by hard x-ray photoelectron spectroscopy

    Article • Applied Physics Letters, June 2012, American Institute of Physics

    Susanne Stemmer

  31. Frequency dispersion in III-V metal-oxide-semiconductor capacitors

    Article • Applied Physics Letters, June 2012, American Institute of Physics

    Susanne Stemmer

  32. Capacitance-voltage analysis of high-carrier-density SrTiO3/GdTiO3 heterostructures

    Article • Applied Physics Letters, June 2012, American Institute of Physics

    Susanne Stemmer

  33. Nanoscale quantification of octahedral tilts in perovskite films

    Article • Applied Physics Letters, May 2012, American Institute of Physics

    Susanne Stemmer

  34. Seebeck coefficient of a quantum confined, high-electron-density electron gas in SrTiO3

    Article • Applied Physics Letters, April 2012, American Institute of Physics

    Susanne Stemmer

  35. Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces

    Article • Applied Physics Letters, December 2011, American Institute of Physics

    Susanne Stemmer

  36. Suppression of vacancy defects in epitaxial La-doped SrTiO3 films

    Article • Applied Physics Letters, December 2011, American Institute of Physics

    Susanne Stemmer

  37. Probing the metal-insulator transition of NdNiO3 by electrostatic doping

    Article • Applied Physics Letters, November 2011, American Institute of Physics

    Susanne Stemmer

  38. A heterojunction modulation-doped Mott transistor

    Article • Journal of Applied Physics, October 2011, American Institute of Physics

    Susanne Stemmer

  39. Enhancing the electron mobility of SrTiO3 with strain

    Article • Applied Physics Letters, March 2011, American Institute of Physics

    Susanne Stemmer

  40. Determining ferroelectric polarity at the nanoscale

    Article • Applied Physics Letters, January 2011, American Institute of Physics

    Susanne Stemmer

  41. Influence of trimethylaluminum on the growth and properties of HfO2/In0.53Ga0.47As interfaces

    Article • Applied Physics Letters, January 2011, American Institute of Physics

    Susanne Stemmer

  42. Atomic number contrast in high angle annular dark field imaging of crystals

    Article • Materials Science and Technology, June 2008, Taylor & Francis

    Susanne Stemmer