All Stories

  1. Defect Formation in Ion-Implanted Si
  2. New-type solar concentrator
  3. Semiconductor materials sensitive to EM spectrum
  4. PHOTOCAPACITANCE OF SELECTIVELY DOPED AlGaAs/GaAs HETEROSTRUCTURES CONTAINING DEEP TRAPS
  5. PHOTOCAPACITANCE OF SELECTIVELY DOPED AlGaAs/GaAs HETEROSTRUCTURES CONTAINING DEEP TRAPS
  6. Photocapacitance of GaAs thin-film epitaxial structures
  7. PHOTOCAPACITANCE OF GaAs THIN-FILM STRUCTURES FABRICATED ON A SEMI-INSULATING COMPENSATED SUBSTRATE
  8. PHOTOCAPACITANCE OF GaAs THIN-FILM STRUCTURES FABRICATED ON A SEMI-INSULATING COMPENSATED SUBSTRATE
  9. AlGaAs-GaAs heterostructure δ-doped field-effect transistor (δ-FET)
  10. Elaboration of gallium arsenide technology in Georgia for development of microelectronic devices
  11. Non-destructive deep trap diagnostics of epitaxial structures
  12. Determination of deep trap concentration at channel–substrate interface in GaAs MESFET using sidegating measurements
  13. Study of Electrical Breakdown Peculiarities in High-Resistivity Compensated p-InSb