All Stories

  1. On the origin of drain current transients and subthreshold sweep hysteresis in 4H-SiC MOSFETs

    Article • Applied Physics Letters, October 2019, American Institute of Physics

    Dr. Michael Krieger

  2. On the Origin of Charge Compensation in Aluminum-Implanted n-Type 4H-SiC by Analysis of Hall Effect Measurements

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Dr. Michael Krieger

  3. Basal Plane Dislocation Conversion Enhancement in 4H-SiC Homo-Epitaxial Layers by Ion Implantation into the Wafer

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Christian Heidorn, Dr. Michael Krieger

  4. Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC

    Article • AIP Advances, May 2019, American Institute of Physics

    Dr. Michael Krieger

  5. Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Dr. Michael Krieger

  6. Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Dr. Michael Krieger

  7. On Deep Level Transient Spectroscopy of Extended Defects in n-Type 4H-SiC

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    Dr. Michael Krieger

  8. Passivation and Generation of States at P-Implanted Thermally Grown and Deposited N-Type 4H-SiC/SiO2 Interfaces

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Dr. Michael Krieger

  9. Doping of 4H-SiC with Group IV Elements

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Dr. Michael Krieger