All Stories

  1. Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations

    Article • Applied Physics Letters, September 2019, American Institute of Physics

    Heiji Watanabe, Dr Hiroshi Yano

  2. Anomalous carbon clusters in 4H-SiC/SiO2 interfaces

    Article • Journal of Applied Physics, February 2019, American Institute of Physics

    Dr Hiroshi Yano

  3. Dynamic Characterization of the Threshold Voltage Instability under the Pulsed Gate Bias Stress in 4H-SiC MOSFET

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    Dr Hiroshi Yano

  4. Photoluminescence of 10H-SiC

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Dr Hiroshi Yano

  5. h-yano@ms.naist.jp

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Dr Hiroshi Yano, Daisuke Nakata

  6. Low-temperature photoluminescence of 8H-SiC homoepitaxial layer

    Article • Japanese Journal of Applied Physics, January 2016, Japan Society of Applied Physics

    Dr Hiroshi Yano

  7. Investigation of crystallinity and planar defects in the Si nanowires grown by vapor–liquid–solid mode using indium catalyst for solar cell applications

    Article • Japanese Journal of Applied Physics, October 2015, Japan Society of Applied Physics

    Dr Hiroshi Yano

  8. Threshold Voltage Instability in 4H-SiC MOSFETs With Phosphorus-Doped and Nitrided Gate Oxides

    Article • IEEE Transactions on Electron Devices, February 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Hiroshi Yano

  9. Crystallographic Structure of 8H- and 10H-SiC Analyzed by Raman Spectroscopy and Diffraction Methods

    Article • Materials Science Forum, February 2014, Trans Tech Publications

    Dr Hiroshi Yano

  10. ゲート酸化膜へのリン導入によるSiC-MOS界面欠陥の低減とMOSFETの高性能化

    Article • Hyomen Kagaku, January 2014, Surface Science Society Japan

    Dr Hiroshi Yano

  11. POCl3 Annealing as a New Method for Improving 4H-SiC MOS Device Performance

    Article • ECS Transactions, March 2013, The Electrochemical Society

    Dr Hiroshi Yano

  12. Photoluminescence of 8H-SiC

    Article • Materials Science Forum, January 2013, Trans Tech Publications

    Dr Hiroshi Yano

  13. Characterization of POCl3-Annealed 4H-Sic Mosfets by Charge Pumping Technique

    Article • Materials Science Forum, January 2013, Trans Tech Publications

    Dr Hiroshi Yano

  14. Comparison of Etch Pit Shapes on Off-Oriented 4H-SiC Using Different Halogen Gases

    Article • Materials Science Forum, January 2013, Trans Tech Publications

    Dr Hiroshi Yano

  15. Effect of Interfacial Localization of Phosphorus on Electrical Properties and Reliability of 4H-SiC MOS Devices

    Article • Materials Science Forum, January 2013, Trans Tech Publications

    Dr Hiroshi Yano

  16. Improved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl3 Annealing

    Article • Materials Science Forum, January 2013, Trans Tech Publications

    Dr Hiroshi Yano

  17. Origin of Anisotropic Electrical Properties of 4H-SiC Trench Metal–Oxide–Semiconductor Field-Effect Transistors on Off-Axis Substrates

    Article • Japanese Journal of Applied Physics, November 2012, Japan Society of Applied Physics

    Dr Hiroshi Yano

  18. Origin of Anisotropic Electrical Properties of 4H-SiC Trench Metal–Oxide–Semiconductor Field-Effect Transistors on Off-Axis Substrates

    Article • Japanese Journal of Applied Physics, October 2012, Japan Society of Applied Physics

    Dr Hiroshi Yano

  19. Single Etch-Pit Shape on Off-Angled 4H-SiC(0001) Si-Face Formed by Chlorine Trifluoride

    Article • Japanese Journal of Applied Physics, July 2012, Japan Society of Applied Physics

    Dr Hiroshi Yano

  20. Single Etch-Pit Shape on Off-Angled 4H-SiC(0001) Si-Face Formed by Chlorine Trifluoride

    Article • Japanese Journal of Applied Physics, June 2012, Japan Society of Applied Physics

    Dr Hiroshi Yano

  21. Development of 4H-SiC MOSFETs with Phosphorus-Doped Gate Oxide

    Article • Materials Science Forum, May 2012, Trans Tech Publications

    Dr Hiroshi Yano

  22. Curious Relationship between Orientation of SiC Substrates and Chemical Reactivity

    Article • Materials Science Forum, May 2012, Trans Tech Publications

    Dr Hiroshi Yano

  23. Clearance of 4H-SiC Sub-Trench in Hot Chlorine Treatment

    Article • Materials Science Forum, May 2012, Trans Tech Publications

    Dr Hiroshi Yano

  24. Effect of POCl3 Annealing on Reliability of Thermal Oxides Grown on 4H-SiC

    Article • Materials Science Forum, May 2012, Trans Tech Publications

    Dr Hiroshi Yano

  25. Shape Control of Trenched 4H-SiC C-Face by Thermal Chlorine Etching

    Article • Japanese Journal of Applied Physics, May 2012, Japan Society of Applied Physics

    Dr Hiroshi Yano

  26. Shape Control of Trenched 4H-SiC C-Face by Thermal Chlorine Etching

    Article • Japanese Journal of Applied Physics, April 2012, Japan Society of Applied Physics

    Dr Hiroshi Yano

  27. Shallow Traps at P-Doped SiO2/4H-SiC(0001) Interface

    Article • Materials Science Forum, March 2011, Trans Tech Publications

    Dr Hiroshi Yano

  28. Surface Treatments of 4H-SiC Evaluated by Contact Angle Measurement

    Article • Materials Science Forum, March 2011, Trans Tech Publications

    Dr Hiroshi Yano

  29. Improved MOS Interface Properties of C-Face 4H-SiC by POCl3 Annealing

    Article • Materials Science Forum, March 2011, Trans Tech Publications

    Dr Hiroshi Yano

  30. Control of Inclined Sidewall Angles of 4H-SiC Mesa and Trench Structures

    Article • Materials Science Forum, March 2011, Trans Tech Publications

    Dr Hiroshi Yano

  31. Instability of 4H-SiC MOSFET Characteristics due to Interface Traps with Long Time Constants

    Article • Materials Science Forum, March 2011, Trans Tech Publications

    Dr Hiroshi Yano

  32. Extraordinary Characteristics of 4H-SiC Trench MOSFETs on Large Off-Axis Substrates

    Article • Materials Science Forum, March 2011, Trans Tech Publications

    Dr Hiroshi Yano

  33. Photoconductivity in inverse silicon opals enhanced by slow photon effect: Yet another step towards optically amplified silicon photonic crystal solar cells

    Article • Applied Physics Letters, February 2011, American Institute of Physics

    Dr Hiroshi Yano

  34. Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide

    Article • IEEE Electron Device Letters, July 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Hiroshi Yano

  35. Classification of defects in polycrystalline Si by temperature dependence of Electroluminescence under forward and reverse-biases

    Article • June 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Hiroshi Yano

  36. Removal of near-interface traps at SiO2/4H–SiC (0001) interfaces by phosphorus incorporation

    Article • Applied Physics Letters, May 2010, American Institute of Physics

    Dr Hiroshi Yano

  37. Systematic Investigation of Interface Properties in 4H-SiC MOS Structures Prepared by Over-Oxidation of Ion-Implanted Substrates

    Article • Materials Science Forum, April 2010, Trans Tech Publications

    Dr Hiroshi Yano

  38. Investigation of Oxide Films Prepared by Direct Oxidation of C-Face 4H-SiC in Nitric Oxide

    Article • Materials Science Forum, April 2010, Trans Tech Publications

    Dr Hiroshi Yano

  39. Hexagonality and Stacking Sequence Dependence of Etching Properties in Cl2-O2-SiC System

    Article • Materials Science Forum, April 2010, Trans Tech Publications

    Dr Hiroshi Yano

  40. Self-Formation of Specific Pyramidal Planes in 4H-SiC Formed by Chlorine Based Ambience

    Article • Materials Science Forum, April 2010, Trans Tech Publications

    Dr Hiroshi Yano

  41. Significant Decrease of the Interface State Density by NH3 Plasma Pretreatment at 4H-SiC (000-1) Surface and its Bond Configuration

    Article • Materials Science Forum, April 2010, Trans Tech Publications

    Dr Hiroshi Yano

  42. NH3Plasma Pretreatment of 4H-SiC(000\bar1) Surface for Reduction of Interface States in Metal–Oxide–Semiconductor Devices

    Article • Applied Physics Express, January 2010, Institute of Physics Publishing

    Dr Hiroshi Yano

  43. Improved Inversion Channel Mobility in Si-face 4H-SiC MOSFETs by Phosphorus Incorporation Technique

    Article • MRS Proceedings, January 2010, Cambridge University Press

    Dr Hiroshi Yano

  44. Improvement of Interface Properties by NH3 Pretreatment for 4H-SiC(000-1) MOS Structure

    Article • October 2009, Japan Society of Applied Physics

    Dr Hiroshi Yano

  45. Interface Properties of C-face 4H-SiC Metal-Oxide-Semiconductor Structures Prepared by Direct Oxidation in Nitric Oxide

    Article • October 2009, Japan Society of Applied Physics

    Dr Hiroshi Yano

  46. Comprehensive study of electroluminescence in multicrystalline silicon solar cells

    Article • Journal of Applied Physics, August 2009, American Institute of Physics

    Dr Hiroshi Yano

  47. Thermal Etching of 4H-SiC(0001) Si Faces in the Mixed Gas of Chlorine and Oxygen

    Article • Japanese Journal of Applied Physics, June 2009, Japan Society of Applied Physics

    Dr Hiroshi Yano

  48. Investigation of Near-Interface Traps Generated by NO Direct Oxidation in C-face 4H-SiC Metal–Oxide–Semiconductor Structures

    Article • Applied Physics Express, January 2009, Institute of Physics Publishing

    Dr Hiroshi Yano

  49. Nonvolatile Thin Film Transistor Memory with Ferritin

    Article • Journal of the Korean Physical Society, January 2009, Korean Physical Society

    Dr Hiroshi Yano

  50. Anisotropic Etching of SiC in the Mixed Gas of Chlorine and Oxygen

    Article • Materials Science Forum, January 2009, Trans Tech Publications

    Dr Hiroshi Yano

  51. Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs

    Article • Materials Science Forum, January 2009, Trans Tech Publications

    Dr Hiroshi Yano

  52. Threshold Voltage Shift in Ga2O3-In2O3-ZnO (GIZO) Thin Film Transistors under Constant Voltage Stress

    Article • September 2008, Japan Society of Applied Physics

    Dr Hiroshi Yano

  53. Thermal Analysis of Degradation in Ga 2 O 3 –In 2 O 3 –ZnO Thin-Film Transistors

    Article • Japanese Journal of Applied Physics, August 2008, Japan Society of Applied Physics

    Dr Hiroshi Yano

  54. Analysis of Anomalous Charge-Pumping Characteristics on 4H-SiC MOSFETs

    Article • IEEE Transactions on Electron Devices, August 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Hiroshi Yano

  55. Crystallinity Evaluation by Microwave Photoconductivity Decay in Double-Layered Polycrystalline Silicon Thin Films Crystallized by Solid Green Laser Annealing

    Article • Japanese Journal of Applied Physics, December 2007, Japan Society of Applied Physics

    Dr Hiroshi Yano

  56. Polycrystalline silicon thin-film transistors on quartz fiber

    Article • Applied Physics Letters, November 2007, American Institute of Physics

    Dr Hiroshi Yano

  57. Increased Channel Mobility in 4H-SiC UMOSFETs Using On-Axis Substrates

    Article • September 2007, CrossRef Test Account

    Dr Hiroshi Yano

  58. Properties of Thermally Etched 4H-SiC by Chlorine-Oxygen System

    Article • September 2007, CrossRef Test Account

    Dr Hiroshi Yano

  59. Modification of SiO2/4H-SiC Interface Properties by High-Pressure H2O Vapor Annealing

    Article • September 2007, CrossRef Test Account

    Dr Hiroshi Yano

  60. Sloped Sidewalls in 4H-SiC Mesa Structure Formed by a Cl2-O2 Thermal Etching

    Article • September 2007, CrossRef Test Account

    Dr Hiroshi Yano

  61. Low-temperature Polycrystalline Silicon Thin Film Transistor Flash Memory with Ferritin

    Article • Japanese Journal of Applied Physics, August 2007, Japan Society of Applied Physics

    Dr Hiroshi Yano

  62. Low Temperature Polycrystalline Silicon Thin Film Transistors Flash Memory with Silicon Nanocrystal Dot

    Article • Japanese Journal of Applied Physics, July 2007, Japan Society of Applied Physics

    Dr Hiroshi Yano

  63. Reliability of Low Temperature Polycrystalline Silicon Thin-Film Transistors with Ultrathin Gate Oxide

    Article • Japanese Journal of Applied Physics, July 2007, Japan Society of Applied Physics

    Dr Hiroshi Yano

  64. Crystallization of Double-Layered Silicon Thin Films by Solid Green Laser Annealing for High-Performance Thin-Film Transistors

    Article • IEEE Electron Device Letters, May 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Hiroshi Yano

  65. Reliability Analysis of Ultra Low-Temperature Polycrystalline Silicon Thin-Film Transistors

    Article • Japanese Journal of Applied Physics, March 2007, Japan Society of Applied Physics

    Dr Hiroshi Yano

  66. Crystallization of Double-Layered Silicon Thin Films by Solid Green Laser Annealing

    Article • Japanese Journal of Applied Physics, February 2007, Japan Society of Applied Physics

    Dr Hiroshi Yano

  67. Anomalously anisotropic channel mobility on trench sidewalls in 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors fabricated on 8° off substrates

    Article • Applied Physics Letters, January 2007, American Institute of Physics

    Dr Hiroshi Yano

  68. Properties of Thermally Etched 4H-SiC by Chlorine-Oxygen System

    Article • Materials Science Forum, January 2007, Trans Tech Publications

    Dr Hiroshi Yano

  69. Modification of SiO2/4H-SiC Interface Properties by High-Pressure H2O Vapor Annealing

    Article • Materials Science Forum, January 2007, Trans Tech Publications

    Dr Hiroshi Yano

  70. Sloped Sidewalls in 4H-SiC Mesa Structure Formed by a Cl2-O2 Thermal Etching

    Article • Materials Science Forum, January 2007, Trans Tech Publications

    Dr Hiroshi Yano

  71. Increased Channel Mobility in 4H-SiC UMOSFETs Using On-Axis Substrates

    Article • Materials Science Forum, January 2007, Trans Tech Publications

    Dr Hiroshi Yano

  72. Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide

    Article • October 2006, CrossRef Test Account

    Dr Hiroshi Yano

  73. Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls

    Article • October 2006, CrossRef Test Account

    Dr Hiroshi Yano

  74. 3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current Method

    Article • October 2006, CrossRef Test Account

    Dr Hiroshi Yano

  75. High Purity SiC Epitaxial Growth by Chemical Vapor Deposition Using CH3SiH3 and C3H8 Sources

    Article • October 2006, CrossRef Test Account

    Dr Hiroshi Yano

  76. Evaluation of Crystallinity in 4H-SiC{0001} Epilayers Thermally Etched by Chlorine and Oxygen System

    Article • Japanese Journal of Applied Physics, July 2006, Japan Society of Applied Physics

    Dr Hiroshi Yano

  77. Improvement of Reliability in Low-Temperature Polycrystalline Silicon Thin-Film Transistors by Water Vapor Annealing

    Article • Japanese Journal of Applied Physics, July 2006, Japan Society of Applied Physics

    Dr Hiroshi Yano

  78. Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide

    Article • Materials Science Forum, January 2006, Trans Tech Publications

    Dr Hiroshi Yano

  79. 3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current Method

    Article • Materials Science Forum, January 2006, Trans Tech Publications

    Dr Hiroshi Yano

  80. Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls

    Article • Materials Science Forum, January 2006, Trans Tech Publications

    Dr Hiroshi Yano

  81. Crystallization of Double-Layered Silicon Thin Films by Solid Green Laser Annealing and Its Application to Low Temperature poly-Si Thin Film Transistors

    Article • January 2006, The Electrochemical Society

    Dr Hiroshi Yano

  82. High Purity SiC Epitaxial Growth by Chemical Vapor Deposition Using CH3SiH3 and C3H8 Sources

    Article • Materials Science Forum, January 2006, Trans Tech Publications

    Dr Hiroshi Yano

  83. Analysis of minority carrier diffusion length in SiC toward high quality epitaxial growth

    Article • Microelectronic Engineering, January 2006, Elsevier

    Dr Hiroshi Yano

  84. Floating Nanodot Gate Memory Devices Based on Biomineralized Inorganic Nanodot Array as a Storage Node

    Article • Japanese Journal of Applied Physics, December 2005, Japan Society of Applied Physics

    Dr Hiroshi Yano

  85. Analysis of Photoelectrochemical Processes in α-SiC Substrates with Atomically Flat Surfaces

    Article • Japanese Journal of Applied Physics, December 2005, Japan Society of Applied Physics

    Dr Hiroshi Yano

  86. Nondestructive Analysis of Crystal Defects in 4H-SiC Epilayer by Devised Electron-Beam-Induced Current Method

    Article • Japanese Journal of Applied Physics, September 2005, Japan Society of Applied Physics

    Dr Hiroshi Yano

  87. Thermal degradation of low temperature poly-Si TFT

    Article • Thin Solid Films, September 2005, Elsevier

    Dr Hiroshi Yano

  88. Electron Injection into Si Nanodot Fabricated by Side-Wall Plasma Enhanced Chemical Vapor Deposition

    Article • Japanese Journal of Applied Physics, June 2005, Japan Society of Applied Physics

    Dr Hiroshi Yano

  89. Role of Hydrogen in Dry Etching of Silicon Carbide Using Inductively and Capacitively Coupled Plasma

    Article • Japanese Journal of Applied Physics, June 2005, Japan Society of Applied Physics

    Dr Hiroshi Yano

  90. Fabrication of Anodic Oxidation Films on 4H–SiC at Room Temperature Using HNO 3 -Based Electrolytes

    Article • Japanese Journal of Applied Physics, June 2005, Japan Society of Applied Physics

    Dr Hiroshi Yano

  91. High Temperature NO Annealing of Deposited SiO2 and SiON Films on N-Type 4H-SiC

    Article • May 2005, CrossRef Test Account

    Dr Hiroshi Yano

  92. Reduction of Fluoride Species and Surface Roughness by H2 Gas Addition in SiC Dry Etching

    Article • May 2005, CrossRef Test Account

    Dr Hiroshi Yano

  93. Degradation in Low-Temperature Poly-Si Thin Film Transistors Depending on Grain Boundaries

    Article • Japanese Journal of Applied Physics, May 2005, Japan Society of Applied Physics

    Dr Hiroshi Yano

  94. High Temperature NO Annealing of Deposited SiO2 and SiON Films on N-Type 4H-SiC

    Article • Materials Science Forum, January 2005, Trans Tech Publications

    Dr Hiroshi Yano

  95. Reduction of Fluoride Species and Surface Roughness by H2 Gas Addition in SiC Dry Etching

    Article • Materials Science Forum, January 2005, Trans Tech Publications

    Dr Hiroshi Yano

  96. Mechanisms in Electrochemical Etching of α-SiC Substrates

    Article • Materials Science Forum, January 2004, Trans Tech Publications

    Dr Hiroshi Yano

  97. Relationship between Surface Structures and Aluminium Incorporation Behaviour of SiC in Chemical Vapor Deposition

    Article • Materials Science Forum, January 2004, Trans Tech Publications

    Dr Hiroshi Yano

  98. Influence of H2 Pre-Treatment on Ni/4H-SiC Schottky Diode Properties

    Article • Materials Science Forum, January 2004, Trans Tech Publications

    Dr Hiroshi Yano

  99. Radical Nitridation of Ultra-Thin SiO2/SiC Structure

    Article • Materials Science Forum, January 2004, Trans Tech Publications

    Dr Hiroshi Yano

  100. Fast Oxidation of 4H-SiC at Room Temperature by Electrochemical Methods

    Article • Materials Science Forum, January 2004, Trans Tech Publications

    Dr Hiroshi Yano

  101. Hot Carrier Analysis in Low-TemperaturePoly-Si TFTs Using Picosecond Emission Microscope

    Article • IEEE Transactions on Electron Devices, January 2004, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Hiroshi Yano

  102. Epitaxial Growth and Device Processing of SiC on Non-Basal Planes

    Article • January 2004, Springer Science + Business Media

    Dr Hiroshi Yano

  103. Improvement of SiO 2 /SiC Interface Properties by Nitrogen Radical Irradiation

    Article • Japanese Journal of Applied Physics, June 2003, Japan Society of Applied Physics

    Dr Hiroshi Yano

  104. Hot carrier analysis in low-temperature poly-Si thin-film transistors using pico-second time-resolved emission microscope

    Article • IEEE Electron Device Letters, April 2003, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Hiroshi Yano

  105. Low Temperature Nitridation of Si Oxide Utilizing Activated Oxygen and Nitrogen

    Article • Japanese Journal of Applied Physics, March 2003, Japan Society of Applied Physics

    Dr Hiroshi Yano

  106. Hot Carrier Effect in Low-Temperature Poly-Silicon p-Channel Thin-Film Transistors

    Article • Solid State Phenomena, January 2003, Trans Tech Publications

    Dr Hiroshi Yano

  107. Reliability of Low-Temperature Poly-Si Thin-Film Transistors

    Article • Solid State Phenomena, January 2003, Trans Tech Publications

    Dr Hiroshi Yano

  108. Surface Structure of Electrochemically Etched α-SiC Substrates

    Article • Materials Science Forum, January 2003, Trans Tech Publications

    Dr Hiroshi Yano

  109. Effects of Nitrogen Radical Irradiation on Performance of SiC MOSFETs

    Article • Materials Science Forum, January 2003, Trans Tech Publications

    Dr Hiroshi Yano

  110. Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(033̄8)

    Article • Applied Physics Letters, December 2002, American Institute of Physics

    Dr Hiroshi Yano

  111. Gate Length Dependence of Hot Carrier Reliability in Low-Temperature Polycrystalline-Silicon P-Channel Thin Film Transistors

    Article • Japanese Journal of Applied Physics, October 2002, Japan Society of Applied Physics

    Dr Hiroshi Yano

  112. Shallow states at SiO2/4H-SiC interface on (112̄0) and (0001) faces

    Article • Applied Physics Letters, July 2002, American Institute of Physics

    Dr Hiroshi Yano

  113. Low Temperature Nitridation of Si Oxide Utilizing Activated Nitrogen

    Article • Japanese Journal of Applied Physics, June 2002, Japan Society of Applied Physics

    Dr Hiroshi Yano

  114. Comprehensive Study on Reliability of Low-Temperature Poly-Si Thin-Film Transistors under Dynamic Complimentary Metal-Oxide Semiconductor Operations

    Article • Japanese Journal of Applied Physics, April 2002, Japan Society of Applied Physics

    Dr Hiroshi Yano

  115. Hot Carrier Effect in Low-Temperature poly-Si p-ch Thin-Film Transistors under Dynamic Stress

    Article • Japanese Journal of Applied Physics, January 2002, Japan Society of Applied Physics

    Dr Hiroshi Yano

  116. Improvement of SiO2/α-SiC Interface Properties by Nitrogen Radical Treatment

    Article • Materials Science Forum, January 2002, Trans Tech Publications

    Dr Hiroshi Yano

  117. 4H-SiC MOSFETs on (03-38) Face

    Article • Materials Science Forum, January 2002, Trans Tech Publications

    Dr Hiroshi Yano

  118. SiO2/SiC Interface Properties on Various Surface Orientations

    Article • MRS Proceedings, January 2002, Cambridge University Press

    Dr Hiroshi Yano

  119. 4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching

    Article • Materials Science Forum, January 2002, Trans Tech Publications

    Dr Hiroshi Yano

  120. Chemical vapor deposition and deep level analyses of 4H-SiC(112̄0)

    Article • Journal of Applied Physics, June 2001, American Institute of Physics

    Dr Hiroshi Yano

  121. A cause for highly improved channel mobility of 4H-SiC metal–oxide–semiconductor field-effect transistors on the (112̄0) face

    Article • Applied Physics Letters, January 2001, American Institute of Physics

    Dr Hiroshi Yano

  122. Comprehensive Study on Reliability of Low-Temperature Poly-Si TFTs under Dynamic CMOS Operations

    Article • January 2001, Japan Society of Applied Physics

    Dr Hiroshi Yano

  123. Recent Progress in SiC Epitaxial Growth and Device Processing Technology

    Article • Materials Science Forum, January 2001, Trans Tech Publications

    Dr Hiroshi Yano

  124. Interface States of SiO2/SiC on (11-20) and (0001) Si Faces

    Article • Materials Science Forum, January 2001, Trans Tech Publications

    Dr Hiroshi Yano

  125. High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors

    Article • Japanese Journal of Applied Physics, April 2000, Japan Society of Applied Physics

    Dr Hiroshi Yano

  126. 4H-SiC (11-20) Epitaxial Growth

    Article • Materials Science Forum, January 2000, Trans Tech Publications

    Dr Hiroshi Yano

  127. Traps at the SiC/SiO2-Interface

    Article • MRS Proceedings, January 2000, Cambridge University Press

    Dr Hiroshi Yano

  128. Epitaxial Growth of SiC on Non-Typical Orientations and MOS Interfaces

    Article • MRS Proceedings, January 2000, Cambridge University Press

    Dr Hiroshi Yano

  129. Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face

    Article • Materials Science Forum, January 2000, Trans Tech Publications

    Dr Hiroshi Yano

  130. MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet Oxidation

    Article • Materials Science Forum, January 2000, Trans Tech Publications

    Dr Hiroshi Yano

  131. SiC MISFETs with MBE-grown AlN Gate Dielectric

    Article • Materials Science Forum, January 2000, Trans Tech Publications

    Dr Hiroshi Yano

  132. Recent Progress in SiC Ion Implantation and MOS Technologies for High Power Devices

    Article • January 2000, Japan Society of Applied Physics

    Dr Hiroshi Yano

  133. High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face

    Article • IEEE Electron Device Letters, December 1999, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Hiroshi Yano

  134. Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO/sub 2//SiC MOS system and MOSFET's

    Article • IEEE Transactions on Electron Devices, March 1999, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Hiroshi Yano

  135. High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors

    Article • January 1999, Japan Society of Applied Physics

    Dr Hiroshi Yano

  136. Deep States in SiO2/p-Type 4H-SiC Interface

    Article • Materials Science Forum, January 1998, Trans Tech Publications

    Dr Hiroshi Yano

  137. Deep Interface States in SiO 2/p-type α-SiC Structure

    Article • Japanese Journal of Applied Physics, November 1997, Japan Society of Applied Physics

    Dr Hiroshi Yano

  138. Plasma nitridation of gate insulator on 4H-SiC

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Hiroshi Yano

  139. Reliability analysis of low temperature poly-si thin film transistors by high spatial resolution thermography

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Hiroshi Yano

  140. New evaluation method for reliability of poly-Si thin film transistors using pico-second time-resolved emission microscope

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Hiroshi Yano

  141. Low temperature nitridation of PLCVD HfSixOy gate dielectrics using nitrogen radicals

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Hiroshi Yano

  142. Analysis of reliability in low-temperature poly-Si thin film transistors using pico-second time-resolved emission microscope

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Hiroshi Yano