All Stories

  1. Process variation challenges and resolution in the negative-tone develop double patterning for 20nm and below technology node
  2. Investigating deprotection-induced shrinkage and retro-grade sidewalls in NTD resists
  3. Integration of an EUV metal layer: a 20/14nm demo
  4. Evaluation of lens heating effect in high transmission NTD processes at the 20nm technology node
  5. High order wafer alignment for 20nm node logic process
  6. 20nm VIA BEOL patterning challenges
  7. Investigation of trench and contact hole shrink mechanism in the negative tone develop process
  8. C-quad polarized illumination for back end thin wire: moving beyond annular illumination regime
  9. Reflectivity-induced variation in implant layer lithography
  10. Alternating phase shifted scattering bars for low k[sub 1] trench pattering
  11. Process method to suppress the effect of phase errors in alternating phase shift masks
  12. A FinFET and Tri-gate MOSFET's channel structure patterning and its influence on the device performance
  13. Placement of scattering bars in binary and attenuated phase shift mask for damascene trench patterning
  14. Key challenges in across-pitch 0.33-k 1 trench patterning using hybrid mask
  15. Alignment in chromeless masks
  16. Patterning sub-50-nm Fin-FET using KrF lithography tool
  17. Resist pattern peeling assessment in DUV chemically amplified resist
  18. Impact of scattering bars in damascene trench patterning
  19. Evaluation of alignment target designs for Cu and low-K dual damascene processes
  20. Defocusing image to pattern contact holes using attenuated phase shift masks