All Stories

  1. Microstructure of bismuth centers in silicon before and after irradiation with 15 MeV protons
  2. Positron probing of open vacancy volume of phosphorus‐vacancy complexes in float‐zone n‐type silicon irradiated by 0.9‐MeV electrons and by 15‐MeV protons
  3. Positron probing of disordered regions in neutron-irradiated silicon
  4. Positron annihilation lifetime in float‐zone n‐type silicon irradiated by fast electrons: a thermally stable vacancy defect
  5. Formation and annealing of vacancy-P complexes in proton-irradiated germanium
  6. Positron particle microprobe for studying point radiation and other defects in semiconductors
  7. Positron probing of phosphorus-vacancy complexes in silicon irradiated with 15 MeV protons
  8. Monovacancy–As complexes in proton-irradiated Ge studied by positron lifetime spectroscopy
  9. Cascade phonon-assisted trapping of positrons by divacancies in n-FZ-Si(P) single crystals irradiated with 15 MeV protons
  10. Positron Probing of Vacancy Volume of Thermally Stable Deep Donors Produced with 15 MeV Protons in <i>n</i>-FZ-Si:P Crystals
  11. Positron Probing of Point Radiation Defects in Proton - Irradiated FZ-Silicon Single Crystals
  12. Positron probing of gamma-irradiated Ge doped with P, As, Sb, and Bi: Changes in atomic structures of defects due to n→p conversion
  13. Positron states and annihilation in nanometric semiconducting superlattices
  14. Point Defects in γ-Irradiated Germanium: High- and Low- Momentum Positron Annihilation Study Before and After n-p-Conversion
  15. Elemental specificity of ion cores and ionization entropy of vacancy-group-V-impurity atom pairs in Ge crystals: ACAR and DLTS data
  16. Elementally specific electron–positron annihilation radiation emitted from ion cores of group-V impurity–vacancy complexes in germanium
  17. Configuration of DV Complexes In Ge: Positron Probing of Ion Cores
  18. Configuration of DV Complexes In Ge: Positron Probing of Ion Cores
  19. Positron probing of point V-group impurity-vacancy complexes in γ-irradiated germanium
  20. Atomic Environment of Positrons Annihilating in HT Cz-Si Crystal
  21. Positron-sensitive vacancy-type centres in the nitrides: 1D-ACAR data
  22. Atomic Environment of Positrons Annihilating in Different Parts of Cz-Si Single Crystal
  23. Investigation of vacancy-type complexes in GaN and AlN using positron annihilation
  24. Positron annihilation in AlN and GaN
  25. 1D-ACAR Studies of As-Grown Impurity Centers in Silicon
  26. Positron Trapping by Oxygen-Related Defects in Silicon and Anisotropy of 1D-ACAR Spectra
  27. Positron Annihilation Rate and Broad Component of 1D-ACAR in Cz-Si and Fz-Si
  28. Positron Annihilation on Thermal Defects in Cz-Si and Fz-Si
  29. Formal Valency of Cu(1) in YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-x</sub> and Electron Momentum Distributions: 1D-ADAP Data
  30. Results of Systematic Study of Annihilation Photons 1D-Angular Distributions in Diamond-Like Semiconductors
  31. The Influence to 1D-ADAP Parameters in Re-Ba<sub>2</sub>Cu<sub>3</sub>O<sub>7-x</sub> Oxides by Variations of Re-Elements, Oxygen Content and Temperature
  32. A Study of Defects in Heat Treated Cz-Silicon by Positron Annihilation
  33. 1D-angular distributions of annihilation photons in REBaCuO oxides (RE = Y, Nd, Lu)
  34. Positron Sudies of Thermal-Induced Defects in Silicon
  35. The annihilation of positrons with electrons bound in edge dislocations
  36. Point radiation defects in germanium