All Stories

  1. Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p++ Emitters

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    Mrs. Selsabil Selsabil

  2. Optimization of VLS Growth Process for 4H-SiC P/N Junctions

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Mrs. Selsabil Selsabil