All Stories

  1. Influence of rf sputter power on ZnO film characteristics for transparent memristor devices

    Article • AIP Advances, October 2019, American Institute of Physics

    Firman M Simanjuntak

  2. ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devices

    Article • APL Materials, May 2019, American Institute of Physics

    Firman M Simanjuntak

  3. Structural and electrical properties analysis of InAlGaN/GaN heterostructures grown at elevated temperatures by MOCVD

    Article • Journal of Crystal Growth, November 2018, Elsevier

    Firman M Simanjuntak

  4. Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer

    Article • Japanese Journal of Applied Physics, March 2018, Japan Society of Applied Physics

    Firman M Simanjuntak

  5. Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory

    Article • Thin Solid Films, March 2018, Elsevier

    Firman M Simanjuntak

  6. The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO 2 -based resistive switching random access memory devices

    Article • Thin Solid Films, March 2018, Elsevier

    Firman M Simanjuntak

  7. Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell

    Article • Semiconductor Science and Technology, November 2017, Institute of Physics Publishing

    Firman M Simanjuntak

  8. Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory

    Article • Applied Physics Letters, September 2017, American Institute of Physics

    Firman M Simanjuntak

  9. One bipolar transistor selector - One resistive random access memory device for cross bar memory array

    Article • AIP Advances, September 2017, American Institute of Physics

    Firman M Simanjuntak

  10. Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell

    Article • Nanotechnology, August 2017, Institute of Physics Publishing

    Firman M Simanjuntak

  11. Resistive Switching Characteristics of Hydrogen Peroxide Surface Oxidized ZnO-Based Transparent Resistive Memory Devices

    Article • ECS Transactions, April 2017, The Electrochemical Society

    Firman M Simanjuntak

  12. Status and Prospects of ZnO-Based Resistive Switching Memory Devices

    Article • Nanoscale Research Letters, August 2016, Springer Science + Business Media

    Firman M Simanjuntak

  13. Temperature induced complementary switching in titanium oxide resistive random access memory

    Article • AIP Advances, July 2016, American Institute of Physics

    Firman M Simanjuntak

  14. Impacts of Co doping on ZnO transparent switching memory device characteristics

    Article • Applied Physics Letters, May 2016, American Institute of Physics

    Firman M Simanjuntak

  15. Enhanced switching uniformity in AZO/ZnO1−x/ITO transparent resistive memory devices by bipolar double forming

    Article • Applied Physics Letters, July 2015, American Institute of Physics

    Firman M Simanjuntak

  16. Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode

    Article • Journal of Materials Science, July 2015, Springer Science + Business Media

    Firman M Simanjuntak

  17. Electrospinning Processing and Microstructural Characterization of Ce0.78Gd0.2Sr0.02O2-δ Fiber for a Composite Anode

    Article • Advanced Materials Research, July 2011, Trans Tech Publications

    Firman M Simanjuntak