All Stories

  1. Room‐Temperature Ni Interaction with Deformation‐Induced Defects in Si: A DLTS Study
  2. Annealing and LEEBI Effects on the Stacking Fault Expansion and Shrinking in 4H‐SiC
  3. Estimations of Low Temperature Dislocation Mobility in GaN
  4. Effect of Nickel and Copper Introduced at Room Temperature on the Recombination Properties of Extended Defects in Silicon
  5. Recombination and optical properties of dislocations gliding at room temperature in GaN under applied stress
  6. Зависимость объемных электрофизических свойств мультикремния от параметров разориентации зерен
  7. Влияние никеля и меди, введенных при комнатной температуре, на рекомбинационные свойства протяженных дефектов в кремнии
  8. Some new insights into the impact of annealing on single stacking faults in 4H-SiC
  9. Spatial Distribution of the Dislocation Trails in Silicon
  10. EBIC and LBIC investigations of dislocation trails in Si
  11. A Comparison of EBIC, LBIC and XBIC Methods as Tools for Multicrystalline Si Characterization
  12. Structural state and mechanical properties of nanocrystalline carbon films obtained by methane pyrolysis in electric field
  13. Raman investigation of stress and phase transformation induced in silicon by indentation at high temperatures
  14. Dislocation-point defects interaction in semiconductors and kink mobility