All Stories

  1. Antennas and CMOS integrated circuits in the high-frequency regime

    Article • Microwave and Optical Technology Letters, July 2016, Wiley

    Dr Roberto S Murphy-Arteaga

  2. A DC Method to Extract Mobility Degradation and Series Resistance of Multifinger Microwave MOSFETs

    Article • IEEE Transactions on Electron Devices, May 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Roberto S Murphy-Arteaga

  3. Characterization of Hot-Carrier-Induced RF-MOSFET Degradation at Different Bulk Biasing Conditions From $S$ -Parameters

    Article • IEEE Transactions on Microwave Theory and Techniques, January 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Roberto S Murphy-Arteaga

  4. Consistent DC and RF MOSFET Modeling Using an $S$-Parameter Measurement-Based Parameter Extraction Method in the Linear Region

    Article • IEEE Transactions on Microwave Theory and Techniques, December 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Roberto S Murphy-Arteaga

  5. Consistent Modeling and Power Gain Analysis of Microwave SiGe HBTs in CE and CB Configurations

    Article • IEEE Transactions on Microwave Theory and Techniques, December 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Roberto S Murphy-Arteaga

  6. Correction of DC extracted parameters for microwave MOSFETs based on S-parameter measurements

    Article • May 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Roberto S Murphy-Arteaga

  7. Modeling the Impact of Multi-Fingering Microwave MOSFETs on the Source and Drain Resistances

    Article • IEEE Transactions on Microwave Theory and Techniques, December 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Roberto S Murphy-Arteaga

  8. Impact of multi-finger geometry on the extrinsic parasitic resistances of microwave MOSFETs

    Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Roberto S Murphy-Arteaga

  9. Characterization of RF-MOSFETs in Common-Source Configuration at Different Source-to-Bulk Voltages From S-Parameters

    Article • IEEE Transactions on Electron Devices, August 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Roberto S Murphy-Arteaga

  10. Modeling and parameter extraction of test fixtures for MOSFET on-wafer measurements up to 60 GHz

    Article • International Journal of RF and Microwave Computer-Aided Engineering, November 2012, Wiley

    Dr Roberto S Murphy-Arteaga

  11. Modeling Transmission Lines on Silicon in the Frequency and Time Domains from $S$-Parameters

    Article • IEEE Transactions on Electron Devices, June 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Roberto S Murphy-Arteaga

  12. Using S-parameter measurements to determine the threshold voltage, gain factor, and mobility degradation factor for microwave bulk-MOSFETs

    Article • Microelectronics Reliability, February 2011, Elsevier

    Dr Roberto S Murphy-Arteaga

  13. ANALYTICAL CHARACTERIZATION AND MODELING OF SHIELDED TEST STRUCTURES FOR RF-CMOS

    Article • August 2009, World Scientific Pub Co Pte Lt

    Dr Roberto S Murphy-Arteaga

  14. A Modified Model for the Self Inductance of Metal Lines on Si

    Article • February 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Roberto S Murphy-Arteaga

  15. ANALYTICAL CHARACTERIZATION AND MODELING OF SHIELDED TEST STRUCTURES FOR RF-CMOS

    Article • International Journal of High Speed Electronics and Systems, December 2008, World Scientific Pub Co Pte Lt

    Dr Roberto S Murphy-Arteaga

  16. A Simple Electrical RLC Crosstalk Model for Interconnects on Silicon

    Article • April 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Roberto S Murphy-Arteaga

  17. Analytical Model and Parameter Extraction to Account for the Pad Parasitics in RF-CMOS

    Article • IEEE Transactions on Electron Devices, July 2005, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Roberto S Murphy-Arteaga

  18. Enabling a compact model to simulate the RF behavior of MOSFETs in SPICE

    Article • International Journal of RF and Microwave Computer-Aided Engineering, January 2005, Wiley

    Dr Roberto S Murphy-Arteaga

  19. An improved substrate-loss model to determine MOSFET drain, source and substrate elements

    Article • Microwave and Optical Technology Letters, January 2004, Wiley

    Dr Roberto S Murphy-Arteaga

  20. BiCMOS opto-electronic reception system for application in high-frequencies

    Article • January 2004, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Roberto S Murphy-Arteaga

  21. Fabrication, characterisation and modelling of integrated on-silicon inductors

    Article • Microelectronics Reliability, February 2003, Elsevier

    Dr Roberto S Murphy-Arteaga

  22. MOSFET bias dependent series resistance extraction from RF measurements

    Article • Electronics Letters, January 2003, the Institution of Engineering and Technology (the IET)

    Dr Roberto S Murphy-Arteaga

  23. MOSFET gate resistance determination

    Article • Electronics Letters, January 2003, the Institution of Engineering and Technology (the IET)

    Dr Roberto S Murphy-Arteaga

  24. RF low-noise amplifiers in BiCMOS technologies

    Article • IEEE Transactions on Circuits and Systems II Analog and Digital Signal Processing, July 1999, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Roberto S Murphy-Arteaga

  25. Quality Assurance in Polysilicon Deposition Using Statistics

    Article • Quality Engineering, December 1995, Taylor & Francis

    Dr Roberto S Murphy-Arteaga

  26. Die punch test study and relationship to delta VBE

    Article • IEEE Transactions on Components Hybrids and Manufacturing Technology, January 1991, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Roberto S Murphy-Arteaga

  27. A MAPLE-based homotopic circuit simulation package

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Roberto S Murphy-Arteaga

  28. Electrical characteristics of a-SiGe:H/c-Si heterojunction diodes

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Roberto S Murphy-Arteaga

  29. Impact of technology scaling on the input and output features of RF-MOSFETs: effects and modeling

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Roberto S Murphy-Arteaga

  30. Consequence of the coupled variables in homotopic simulation of nonlinear resistive circuits

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Roberto S Murphy-Arteaga

  31. An alternative method to determine effective channel length and parasitic series resistance of LDD MOSFET's

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Roberto S Murphy-Arteaga

  32. The Use of Statistical Methods to Insure the Quality and Optimization of Polysilicon Deposition

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Roberto S Murphy-Arteaga

  33. Straightforward determination of small-signal model parameters for bulk RF-MOSFETs

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Roberto S Murphy-Arteaga