All Stories

  1. Influence of Dopant Concentration on Dislocation Distributions in 150mm 4H SiC Wafers

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Gilyong Chung, Ouloide Yannick Goue

  2. Optimization of 150 mm 4H SiC Substrate Crystal Quality

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Gilyong Chung, Ouloide Yannick Goue

  3. Synchrotron X-Ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC Wafers

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Ouloide Yannick Goue, Gilyong Chung

  4. Using Ray Tracing Simulations for Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC c-Plane Wafers Grown by PVT Method

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Ouloide Yannick Goue

  5. Correlation of Lifetime Mapping of 4H-SiC Epilayers with Structural Defects Using Synchrotron X-Ray Topography

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Ouloide Yannick Goue

  6. Mapping of Threading Screw Dislocations in 4H n-Type SiC Wafers

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Ouloide Yannick Goue