All Stories

  1. Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging

    Article • March 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Pin Jern Ker

  2. A microcontroller-based system for liquid level detection using infrared sensing

    Article • December 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Pin Jern Ker

  3. Modeling of 14 nm gate length n-Type MOSFET

    Article • August 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Pin Jern Ker, Noor Faizah Zainul Abidin

  4. Proposed new strategy in CQI at course module level through students' feedbacks in UNITEN

    Article • December 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Pin Jern Ker

  5. Temperature dependence of impact ionization in InAs: erratum

    Article • Optics Express, October 2014, Optical Society of America (OSA)

    Dr. Pin Jern Ker

  6. Determining the different learning styles of students from different engineering programmes in UNITEN

    Article • December 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Pin Jern Ker

  7. High speed low noise InAs electron avalanche photodiodes for telecommunication and infrared sensing applications

    Article • October 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Pin Jern Ker

  8. Temperature dependence of impact ionization in InAs

    Article • Optics Express, April 2013, Optical Society of America (OSA)

    Dr. Pin Jern Ker

  9. Can InAs Avalanche Photodiodes achieve high sensitivity for infrared sensing applications?

    Article • Optics Express, December 2012, Optical Society of America (OSA)

    Dr. Pin Jern Ker

  10. InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product

    Article • July 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Pin Jern Ker

  11. Low noise high responsivity InAs electron avalanche photodiodes for infrared sensing

    Article • physica status solidi c, December 2011, Wiley

    Dr. Pin Jern Ker

  12. InAs avalanche photodiodes for X-ray detection

    Article • Journal of Instrumentation, December 2011, Institute of Physics Publishing

    Dr. Pin Jern Ker

  13. High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit

    Article • Optics Express, November 2011, Optical Society of America (OSA)

    Dr. Pin Jern Ker

  14. InAs avalanche photodiodes for X-ray detection

    Article • October 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Pin Jern Ker

  15. InAs Electron-Avalanche Photodiodes: From leaky diodes to extremely low noise avalanche photodiodes

    Article • October 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Pin Jern Ker

  16. Temperature Dependence of Leakage Current in InAs Avalanche Photodiodes

    Article • IEEE Journal of Quantum Electronics, August 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Pin Jern Ker

  17. Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K

    Article • IEEE Journal of Quantum Electronics, June 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Pin Jern Ker