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  1. Impact of the AlN nucleation layer on the variation of the vertical-direction breakdown voltage of AlGaN/GaN high-electron-mobility transistor structures on a Si substrate
  2. Influence of the Al content of the AlGaN buffer layer in AlGaN/GaN high-electron-mobility transistor structures on a Si substrate
  3. Opportunities and challenges in GaN metal organic chemical vapor deposition for electron devices
  4. Effect of the formation temperature of the AlN/Si interface on the vertical-direction breakdown voltages of AlGaN/GaN HEMTs on Si substrates
  5. Normally-OFF Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with Low Leakage Current and High Breakdown Voltage (825 V)
  6. High growth rates of AlN and AlGaN on 8″ silicon wafer using metal-organic vapor phase epitaxy reactor
  7. Control of Thickness and Composition Variation of AlGaN/GaN on 6- and 8-in. Substrates Using Multiwafer High-Growth-Rate Metal Organic Chemical Vapor Deposition Tool
  8. Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate
  9. A monolithic Cockcroft-Walton voltage multiplier based on AlGaN/GaN HFET structure