All Stories

  1. Accurate blood diagnostic using Ion Beam Analysis on blood drops

    Article • MRS Advances, January 2016, Cambridge University Press

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  2. Lasting Non-toxic Anti-fog

    Article • MRS Advances, January 2016, Cambridge University Press

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  3. How to measure molecules on Si surfaces and their effect of surface tension.

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, February 2012, Elsevier

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  4. Ion Beam Analysis Of Silicon-Based Surfaces And Correlation With Surface Energy Measurements

    Article • January 2011, American Institute of Physics

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  5. A New 3D Multistring Code to Identify Compound Oxide Nanophase With Ion Channeling

    Article • MRS Proceedings, January 2007, Cambridge University Press

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  6. Atomic displacement free interfaces and atomic registry in SiO2∕(1×1) Si(100)

    Article • Journal of Applied Physics, November 2006, American Institute of Physics

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  7. Infrared spectroscopic analysis of an ordered Si/SiO2 interface

    Article • Applied Physics Letters, January 2004, American Institute of Physics

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  8. The formation of ordered, ultrathin SiO2/Si(100) interfaces grown on (1×1) Si(100)

    Article • Materials Science and Engineering B, December 2001, Elsevier

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  9. Long Range Order in Ultra-Thin SiO2 Grown on Ordered Si(100)

    Article • MRS Proceedings, January 1999, Cambridge University Press

    Prof. Nicole Herbots

  10. H-passivation of Si(100) By Wet Chemical Cleaning: Discovery of Ordering

    Article • MRS Proceedings, January 1998, Cambridge University Press

    Prof. Nicole Herbots

  11. Discovery of Long Range Order in Thin (2-20 NM) SiO2 Films by Ion Beam Analysis

    Article • MRS Proceedings, January 1998, Cambridge University Press

    Prof. Nicole Herbots

  12. Heteroepitaxial properties of Si1−x−yGexCy on Si(100) grown by combined ion- and molecular-beam deposition

    Article • Journal of Applied Physics, April 1997, American Institute of Physics

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  13. Microstructure and ion beam characterization of heteroepitaxial Si1−x−yGexCy

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, September 1996, Elsevier

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  14. Characterization of carbon in heteroepitaxial Si1 − x − yGexCy thin films via combined ion channeling and nuclear resonance analysis

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, September 1996, Elsevier

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  15. The onset of secondary phase precipitation during synthesis of heteroepitaxial Si1−x−yGexCy on Si(100)

    Article • Applied Physics Letters, February 1996, American Institute of Physics

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  16. Damage-to-dose ratio after low energy silicon ion implantation into crystalline silicon

    Article • Journal of Materials Research, September 1993, Cambridge University Press

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  17. Microstructure and stoichiometry dependence of ion beam nitrides as a function of energy and temperature: A comparative study between Si and SiGe

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, July 1992, American Vacuum Society

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  18. Kinetics of ion beam nitridation (IBN) of Si and of MBE-grown Ge and SixGe1−x alloys: The role of ion energy, ion dose and substrate temperature

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, April 1992, Elsevier

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  19. Thin film formation from low energy ions: new kinetic paths, new properties, new phases

    Article • Materials & Design (1980-2015), January 1992, Elsevier

    Prof. Nicole Herbots

  20. Damage to Crystalline Silicon Following Implantation by Low Energy Silicon Ions

    Article • MRS Proceedings, January 1992, Cambridge University Press

    Prof. Nicole Herbots

  21. Structure and properties of silicon nitride and nitride prepared by direct low energy ion beam nitridation

    Article • Materials Science and Engineering B, January 1992, Elsevier

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  22. Comparative study of low energy ion beam oxidation of Si(100), Ge/Si(100) and

    Article • Materials Science and Engineering B, January 1992, Elsevier

    Prof. Nicole Herbots

  23. New SiGe dielectrics grown at room temperature by low‐energy ion beam oxidation and nitridation

    Article • Applied Physics Letters, October 1991, American Institute of Physics

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  24. Epitaxy and Chemical Reactions During Thin Film Formation from Low Energy Ions New Kinetic Pathways, New Phases and New Properties

    Article • MRS Proceedings, January 1991, Cambridge University Press

    Prof. Nicole Herbots

  25. Epitaxy and Chemical Reactions During Thin Film Formation from Low Energy Ions New Kinetic Pathways, New Phases and New Properties

    Article • MRS Proceedings, January 1991, Cambridge University Press

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  26. Role of point defect diffusion and recombination in low-temperature growth of semiconductor heterostructures using low-energy ion beams

    Article • October 1990, SPIE

    Prof. Nicole Herbots

  27. The role of interfacial segregation and microstructure in interdiffusion between aluminum and silicon

    Article • Journal of Electronic Materials, November 1989, Springer Science + Business Media

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  28. Ion beam deposition in materials research

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, February 1989, Elsevier

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  29. A Model for Interdiffusion at Metal Semiconductor Interfaces: Conditions for Spiking

    Article • MRS Proceedings, January 1989, Cambridge University Press

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  30. Integrated Processinyg of Silicided Shallow Junctions using Rapid Thermal Annealing Prior to Dopant Activation

    Article • MRS Proceedings, January 1989, Cambridge University Press

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  31. Silicided Shallow Junction Formation Using Ion Implantation and Thermal Annealing

    Article • MRS Proceedings, January 1988, Cambridge University Press

    Prof. Nicole Herbots

  32. Semiconductor-based heterostructure formation using low energy ion beams: Ion beam deposition (IBD) & combined ion and molecular beam deposition (CIMD)

    Article • January 1988, American Institute of Physics

    Prof. Nicole Herbots

  33. Low-temperature epitaxial growth of Si and Ge and fabrication of isotopic heterostructures by direct ion beam deposition

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, January 1987, Elsevier

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  34. Ion-solid interactions during ion beam deposition of 74Ge and 30Si on Si at very low ion energies (0–200 eV range)

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, March 1986, Elsevier

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  35. Investigations of Low-Temperature Epitaxy, Ion Damage, and Reactive-Ion Cleaning Utilizing Ion Beam Deposition

    Article • MRS Proceedings, January 1986, Cambridge University Press

    Prof. Nicole Herbots

  36. Investigations of Low-Temperature Epitaxy, Ion Damage, and Reactive-Ion Cleaning Utilizing Ion Beam Deposition

    Article • MRS Proceedings, January 1986, Cambridge University Press

    Prof. Nicole Herbots

  37. RBS study of the effect of arsenic and phosphorus interfacial segregation upon the sintering of contacts between implanted polycrystalline silicon and aluminum: Silicon(1%)

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, March 1985, Elsevier

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  38. Ion Beam Deposition of Materials At 40–200 Ev: Effect of Ion Energy And Substrate Temperature On Interface, Thin Film And Damage Formation

    Article • MRS Proceedings, January 1985, Cambridge University Press

    Prof. Nicole Herbots

  39. Arsenic Dopant Influence upon the Sintering Behavior of the Aluminum-Polysilicon Interface

    Article • Journal of The Electrochemical Society, January 1984, The Electrochemical Society

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  40. Surface Characterization of Arsenic Implanted Silicon (100): A New Insight into the Inhibition of Aluminum/Silicon Interdiffusion

    Article • MRS Proceedings, January 1984, Cambridge University Press

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  41. Interface Failure of Gold Covered SiO2 Substrate With TiW and Nb Intermediate Adhesion Layers

    Article • MRS Proceedings, January 1984, Cambridge University Press

    Prof. Nicole Herbots