All Stories

  1. Compact Modeling of SiC and GaN Junction FETs at High Temperature
  2. 4H-SiC p-Type Doping Determination from Secondary Electrons Imaging
  3. On the Optimum Determination and Use of SiC VJFET Threshold Voltage
  4. Cross-Section Doping Topography of 4H-SiC VJFETs by Various Techniques
  5. A Continuous Semi-Empirical VJFET Capacitance Model from Sub to above Threshold Regime
  6. Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC
  7. Comparison of Bottom-Up and Top-Down 3C-SiC NWFETs
  8. Modelling of 4H-SiC VJFETs with Self-Aligned Contacts
  9. 4H-SiC VJFETs with Self-Aligned Contacts
  10. Si NWs Conversion to Si-SiC Core-Shell NWs by MBE