All Stories

  1. Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC
  2. Low Density of Near-Interface Traps at the Al2O3/4H-SiC Interface with Al2O3 Made by Low Temperature Oxidation of Al
  3. Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers
  4. Long Charge Carrier Lifetime in As-Grown 4H-SiC Epilayer
  5. Smooth 4H-SiC Epilayers Grown with High Growth Rates with Silane/Propane Chemistry Using 4° Off-Cut Substrates
  6. The Role of Chlorine during High Growth Rate Epitaxy