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  1. Defect-rich GaN interlayer facilitating the annihilation of threading dislocations in polar GaN crystals grown on (0001)-oriented sapphire substrates

    Article • Journal of Applied Physics, August 2019, American Institute of Physics

    Professor David Rafaja, Dr. Sergey Lazarev

  2. Asymmetric skew X-ray diffraction at fixed incidence angle: application to semiconductor nano-objects

    Article • Journal of Applied Crystallography, May 2016, International Union of Crystallography

    Dr. Sergey Lazarev