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  1. The importance of contacts in Cu2GeTe3 phase change memory devices
  2. Origin of resistivity contrast in interfacial phase-change memory: The crucial role of Ge/Sb intermixing
  3. Chronological change of electrical resistance in GeCu2Te3amorphous film induced by surface oxidation
  4. Multiple phase change structure for the scalable phase change random access memory array
  5. A Study on Phase Transition Characteristics of Ge-Cu-Te Film for Phase Change Random Access Memory
  6. Investigation of a selective switching device using a phase-change material for a 3-dimensional PCRAM array
  7. Optical contrast and laser-induced phase transition in GeCu2Te3 thin film
  8. Multiresistance Characteristics of PCRAM With $ \hbox{Ge}_{1}\hbox{Cu}_{2}\hbox{Te}_{3}$ and $\hbox{Ge}_{2} \hbox{Sb}_{2}\hbox{Te}_{5}$<...
  9. Fast crystal nucleation induced by surface oxidation in Si-doped GeTe amorphous thin film
  10. Crystallization and electrical characteristics of Ge1Cu2Te3 films for phase change random access memory
  11. Crystallization behavior and resistance change in eutectic Si15Te85 amorphous films
  12. Crystallization behavior of Ge1Cu2Te3 amorphous film
  13. Electrical Resistance Change with Crystallization in Si-Te Amorphous Thin Films
  14. Electrical Resistance and Structural Changes on Crystallizaiton Process of Amorphous Ge-Te Thin Films