All Stories

  1. Improving Breakdown Performance for SOI LDMOS with Sidewall Field Plate

    Article • Micro & Nano Letters, December 2018, the Institution of Engineering and Technology (the IET)

    Professor Ying Wang

  2. A SOI-like MOSFET with ESD and SHE Reliability Improvements

    Article • Micro & Nano Letters, August 2018, the Institution of Engineering and Technology (the IET)

    Professor Ying Wang

  3. Negative bias temperature instability in SOI-like p-type metal oxide semiconductor devices

    Article • Micro & Nano Letters, April 2018, the Institution of Engineering and Technology (the IET)

    Professor Ying Wang

  4. Ultrathin-body tunnelling FET using a trench structure

    Article • Micro & Nano Letters, September 2016, the Institution of Engineering and Technology (the IET)

    Professor Ying Wang

  5. Low-leakage 4H-SiC junction barrier Schottky rectifier with sandwich P-type well

    Article • IET Power Electronics, May 2015, the Institution of Engineering and Technology (the IET)

    Professor Ying Wang

  6. Way of operation to improve performance for advanced split-gate resurf stepped oxide UMOSFET

    Article • IET Power Electronics, December 2014, the Institution of Engineering and Technology (the IET)

    Professor Ying Wang

  7. 1.4 kV Junction barrier Schottky rectifier with mixed trench structure

    Article • IET Power Electronics, October 2014, the Institution of Engineering and Technology (the IET)

    Professor Ying Wang

  8. Method to improve trade-off performance for split-gate power U-shape metal-oxide semiconductor field-effect transistor with compound trench dielectrics

    Article • IET Power Electronics, August 2014, the Institution of Engineering and Technology (the IET)

    Professor Ying Wang

  9. Split gate resurf stepped oxide UMOSFET with P-pillar for improved performance

    Article • IET Power Electronics, April 2014, the Institution of Engineering and Technology (the IET)

    Professor Ying Wang