All Stories

  1. Active Broadband Termination for Distributed Amplifiers Using a 45-nm BiCMOS SOI Process
  2. A 185-GHz Low-Noise Amplifier Using a 35-nm InP HEMT Process
  3. High-Efficiency 200-GHz Neutralized Common-Base Power Amplifiers in 250-nm InP HBT
  4. A 5.4 mW G-Band Phase Shifter in 90-nm SiGe HBT With One-Hot Encoding
  5. Frequency-Reconfigurable SP4T Switch With Plaid Metal Transistors and Forward Body Biasing for Enhanced RON × COFF Characteristics
  6. A 28-GHz CMOS Power Amplifier Linearized by Dynamic Conductance Control and Body Carrier Injection
  7. A Small-Size K-Band SPDT Switch Using Alternate CMOS Structure With Resonating Inductor Matching
  8. 28 GHz RF Front-End Structure Using CG LNA as a Switch
  9. Ka-Band Inductor-Shared SP${n}$ T DP${n}$ T Switches and Their Applications to TTD Phase Shifter
  10. Small-Size Low-Loss 28-GHz Body-Floated CMOS DPDT Switch Using Shared Matching Network
  11. Low-loss and Small-size 28 GHz CMOS SPDT Switches using Switched Inductor
  12. Ka-band VCO with parasitic capacitance cancelling technique