Wei wang

All Stories

1. 
   Complementary logic-in-memory inverters integrating n-channel and p-channel ferroelectric organic transistors

   Article • Applied Physics Letters, February 2025, American Institute of Physics

   Wei wang

2. 
   Low-voltage operatable top-gated organic transistors based on the solution-processed binary polymers dielectric for simplifying the manufacturing flow of arrayed AMOLED

   Article • Applied Physics Letters, September 2024, American Institute of Physics

   Wei wang

3. 
   Achieving low-voltage operating high-mobility organic thin-film transistors by a multi-layered gate dielectric

   Article • Applied Physics Letters, April 2024, American Institute of Physics

   Wei wang

4. 
   High-speed, low-voltage programmable/erasable flexible 2-bit organic transistor nonvolatile memory with a monolayer buffered ferroelectric terpolymer insulator

   Article • Applied Physics Letters, August 2022, American Institute of Physics

   Wei wang

5. 
   High-performance polymer semiconductor-based ferroelectric transistor nonvolatile memory with a self-organized ferroelectric/dielectric gate insulator

   Article • Applied Physics Letters, January 2021, American Institute of Physics

   Wei wang

6. 
   High-performance flexible organic thin-film transistor nonvolatile memory based on molecular floating-gate and pn-heterojunction channel layer

   Article • Applied Physics Letters, January 2020, American Institute of Physics

   Wei wang

7. 
   Organic transistor nonvolatile memory with an integrated molecular floating-gate/tunneling layer

   Article • Applied Physics Letters, December 2018, American Institute of Physics

   Professor Shuxu Guo, Wei wang