All Stories

  1. Electrical characteristics of gallium–indium–zinc oxide thin-film transistor non-volatile memory with Sm2O3 and SmTiO3 charge trapping layers

    Article • RSC Advances, January 2015, Royal Society of Chemistry

    Professor Tung-Ming Pan

  2. High-performance InGaZnO thin-film transistor incorporating a HfO2/Er2O3/HfO2stacked gate dielectric

    Article • RSC Advances, January 2015, Royal Society of Chemistry

    Professor Tung-Ming Pan

  3. Effect of annealing temperature on structural and electrical properties of high-κYbTixOygate dielectrics for InGaZnO thin film transistors

    Article • Semiconductor Science and Technology, November 2014, Institute of Physics Publishing

    Professor Tung-Ming Pan

  4. Structural properties and electrical characteristics of Ho2O3 and HoTixOy gate dielectrics for a-InGaZnO thin-film transistors

    Article • RSC Advances, January 2014, Royal Society of Chemistry

    Professor Tung-Ming Pan

  5. Impact of titanium content and postdeposition annealing on the structural and sensing properties of TbTixOysensing membranes

    Article • Journal of Materials Chemistry C, January 2014, Royal Society of Chemistry

    Professor Tung-Ming Pan