All Stories

  1. Mechanism for the formation of nitrogen-filled voids after annealing of GaN on a sapphire substrate

    Article • Journal of Applied Physics, July 2018, American Institute of Physics

    Tohoru Matsubara

  2. Direct observation of inclined a-type threading dislocation with a-type screw dislocation in GaN

    Article • Journal of Applied Physics, May 2017, American Institute of Physics

    Tohoru Matsubara

  3. Visualization of dislocation behavior in HVPE-grown GaN using facet controlling techniques

    Article • physica status solidi (b), April 2017, Wiley

    Tohoru Matsubara

  4. V-shaped pits in HVPE-grown GaN associated with columnar inversion domains originating from foreign particles of α-Si 3 N 4 and graphitic carbon

    Article • Micron, March 2017, Elsevier

    Tohoru Matsubara

  5. Atomic-scale investigation of structural defects in GaN layer onc-plane sapphire substrate during initial growth stage

    Article • Japanese Journal of Applied Physics, March 2016, Japan Society of Applied Physics

    Tohoru Matsubara

  6. Transmission Electron Microscopy Investigation of Local Atomic Environment of Nitrogen inside Voids Formed at GaN/Sapphire Interface

    Article • Japanese Journal of Applied Physics, January 2006, Japan Society of Applied Physics

    Tohoru Matsubara