Tanmoy Kumar Paul

All Stories

1. 
   Analysis of TMD material based vertical heterojucntion tunnel Devices

   Article • AIP Advances, April 2020, American Institute of Physics

   Tanmoy Kumar Paul

2. 
   Transport characteristics of double gate n-channel junctionless transistor

   Article • December 2016, Institute of Electrical & Electronics Engineers (IEEE)

   Tanmoy Kumar Paul