All Stories

  1. Morphology investigation of metalorganic vapor phase epitaxy homoepitaxial (001) β-Ga2O3 growth on on-axis and 6° off-axis substrates
  2. Metalorganic vapor phase epitaxy of β-(AlxGa1−x)2O3 (x = 0–0.55) and multilayer structure on (100) β-(Al0.24Ga0.76)2O3 substrates
  3. Ohmic contact formation on n-type β-Ga2O3: Comparative analysis of Ti/Au and ITO/Ti/Au metallization schemes
  4. Morphology investigation of MOVPE homoepitaxial (001) β-Ga2O3 growth on on-axis and 6° off-axis substrates
  5. Characterization of strain effects on structure, surface morphology, and band gap of MOVPE grown β-Ga 2 O 3 thin films on β-(Al
  6. Al composition dependence of band alignment in NiO/(AlxGa1−x)2O3 heterojunctions
  7. Characterization of strain effects on structure, surface morphology, and band gap of MOVPE grown β-Ga2O3 thin films on β-(AlxGa1-x)2O3 substrates
  8. A Second Look at 2D Simulation of FIB Milling: Accounting for Mean-Free Path Effects in Redeposition and Sputtering
  9. Optimizing the morphology transition on MOVPE-grown (100) β-Ga2O3 film between step-flow growth and step-bunching: A machine learning-assisted approach
  10. In-situ reflectance analysis of Si-doped β-Ga2O3 films grown by MOVPE: The influence of doping concentration and substrate conductivity
  11. Controlling the morphology transition on MOVPE-grown (100) β-Ga2O3 film between step-flow growth and step-bunching: A machine learning-assisted approach
  12. Impurity-induced step pinning and recovery in MOVPE-grown (100) β-Ga2O3 film
  13. Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga2O3 Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices
  14. Influencing the morphological stability of MOVPE-grown β-Ga2O3 films by O2/Ga ratio
  15. Impurity-induced Step Pinning and Recovery in MOVPE-grown (100) β-Ga2O3 Film: The Influence of Ga supersaturation
  16. In-situ spectral reflectance investigation of hetero-epitaxially grown β-Ga2O3 thin films on c-plane Al2O3 via MOVPE process
  17. Charge state transition levels of Ni in β-Ga2O3 crystals from experiment and theory: An attractive candidate for compensation doping
  18. Exploring miscut angle influence on (100) β-Ga2O3 homoepitaxial films growth: Comparing MOVPE growth with MBE approaches
  19. Development of the VGF Crystal Growth Recipe: Intelligent Solutions of Ill‐Posed Inverse Problems using Images and Numerical Data
  20. Ge-ion implantation and activation in (100) β-Ga2O3 for ohmic contact improvement using pulsed rapid thermal annealing
  21. Enhancement-mode vertical (100) β-Ga2O3 FinFETs with an average breakdown strength of 2.7 MV cm−1
  22. High-mobility 4 μm MOVPE-grown (100) β-Ga2O3 film by parasitic particles suppression
  23. Homoepitaxial growth rate measurement and surface morphology monitoring of MOVPE-grown Si-doped (1 0 0) β-Ga2O3 thin films using in-situ reflectance spectroscopy
  24. Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β-Ga2O3 films for vertical device application
  25. Bulk single crystals and physical properties of β-(AlxGa1−x)2O3 (x = 0–0.35) grown by the Czochralski method
  26. In - Situ Spectral Reflectance Investigation of Heteroepitaxial Grown Β-Ga2o3thin Films on C-Plane Al2o3 Via Movpe Process
  27. Perspectives on MOVPE-grown (100) β-Ga2O3 thin films and its Al-alloy for power electronics application
  28. Cobalt as a promising dopant for producing semi-insulating β-Ga2O3 crystals: Charge state transition levels from experiment and theory
  29. Effect of post-metallization anneal on (100) Ga2O3/Ti–Au ohmic contact performance and interfacial degradation
  30. Exploiting the Nanostructural Anisotropy of β-Ga2O3 to Demonstrate Giant Improvement in Titanium/Gold Ohmic Contacts
  31. Machine learning supported analysis of MOVPE grown β-Ga2O3 thin films on sapphire
  32. Si doping mechanism in MOVPE-grown (100) β-Ga2O3 films
  33. Refractory metal-based ohmic contacts on β-Ga2O3 using TiW
  34. Two inch diameter, highly conducting bulk β-Ga2O3 single crystals grown by the Czochralski method
  35. SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p–n diodes
  36. Toward Precise n-Type Doping Control in MOVPE-Grown β-Ga2O3 Thin Films by Deep-Learning Approach
  37. Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE
  38. Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3thin films grown by MOVPE
  39. Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays
  40. Direct formation of large-scale multi-layered germanene on Si substrate