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  1. The effect of post-growth rapid thermal annealing on InAs/InGaAs dot-in-a-well structure monolithically grown on Si

    Article • Journal of Applied Physics, April 2019, American Institute of Physics

    Siming Chen

  2. 1.3 μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100°C

    Article • Electronics Letters, September 2014, the Institution of Engineering and Technology (the IET)

    Siming Chen