Siegfried Selberherr

All Stories

1. 
   A multi-level cell for ultra-scaled STT-MRAM realized by back-hopping

   Article • Solid-State Electronics, January 2025, Elsevier

   Siegfried Selberherr

2. 
   Micromagnetic modeling of double spin-torque magnetic tunnel junction devices

   Article • Physica B Condensed Matter, September 2024, Elsevier

   Siegfried Selberherr

3. 
   Electron and spin transport in semiconductor and magnetoresistive devices

   Article • Solid-State Electronics, August 2024, Elsevier

   Siegfried Selberherr

4. 
   Investigating Reliability Issues in Multi-Layered STT-MRAM with Synthetic Antiferromagnets

   Article • July 2024, Institute of Electrical & Electronics Engineers (IEEE)

   Siegfried Selberherr

5. 
   Advancing Nonvolatile Memory Technologies: Enhancing Reliability and Performance through Double Spin Torque Magnetic Tunnel Junctions and Interlayer Exchange Coupling

   Article • June 2024, Institute of Electrical & Electronics Engineers (IEEE)

   Siegfried Selberherr

6. 
   Field-Free Perpendicular Magnetization Switching of SOT-MRAM Devices by Magnetic Spin Hall Effect

   Article • May 2024, Institute of Electrical & Electronics Engineers (IEEE)

   Siegfried Selberherr

7. 
   Influence of Interface Exchange Coupling in Multilayered Spintronic Structures

   Article • May 2024, Institute of Electrical & Electronics Engineers (IEEE)

   Siegfried Selberherr

8. 
   Advanced Modeling and Simulation of Multilayer Spin–Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling

   Article • Micromachines, April 2024, MDPI AG

   Siegfried Selberherr

9. 
   Micromagnetic modeling of SOT-MRAM dynamics

   Article • Physica B Condensed Matter, March 2024, Elsevier

   Siegfried Selberherr

10. 
    Numerical study of two-terminal SOT-MRAM

    Article • Physica B Condensed Matter, January 2024, Elsevier

    Siegfried Selberherr

11. 
    The XIV. European Magnetic Sensors and Actuators Conference - Book of Abstracts

    Article • January 2024, Pavol Jozef Safarik University in Kosice

    Siegfried Selberherr

12. 
    Magnetic and Spin Devices, Volume II

    Article • December 2023, MDPI AG

    Siegfried Selberherr

13. 
    Charge and Spin Transport in Semiconductor Devices

    Article • October 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Siegfried Selberherr

14. 
    A multi-level cell for ultra-scaled STT-MRAM realized by back-hopping

    Article • Solid-State Electronics, October 2023, Elsevier

    Siegfried Selberherr

15. 
    Comprehensive Modeling of Advanced Composite Magnetoresistive Devices

    Article • September 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Siegfried Selberherr

16. 
    A Comprehensive Study of Temperature and Its Effects in SOT-MRAM Devices

    Article • Micromachines, August 2023, MDPI AG

    Siegfried Selberherr

17. 
    Statistical study of electromigration in gold interconnects

    Article • Microelectronics Reliability, August 2023, Elsevier

    Siegfried Selberherr

18. 
    A Theoretical Study of Armchair Antimonene Nanoribbons in the Presence of Uniaxial Strain Based on First-Principles Calculations

    Article • ACS Applied Electronic Materials, July 2023, American Chemical Society (ACS)

    Siegfried Selberherr

19. 
    Technology Computer‐Aided Design

    Article • July 2023, Wiley

    Siegfried Selberherr

20. 
    Multi-level Operation in Ultra-scaled MRAM

    Article • July 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Siegfried Selberherr

21. 
    Comprehensive mobility study of silicon nanowire transistors using multi-subband models

    Article • Nano Express, June 2023, Institute of Physics Publishing

    Siegfried Selberherr

22. 
    Finite Element Approach for the Simulation of Modern MRAM Devices

    Article • Micromachines, April 2023, MDPI AG

    Siegfried Selberherr

23. 
    Electromigration-induced void evolution and failure of Cu/SiCN hybrid bonds

    Article • Journal of Applied Physics, March 2023, American Institute of Physics

    Siegfried Selberherr

24. 
    The influence of interface effects on the switching behavior in ultra-scaled MRAM cells

    Article • Solid-State Electronics, March 2023, Elsevier

    Siegfried Selberherr

25. 
    Modeling thermal effects in STT-MRAM

    Article • Solid-State Electronics, February 2023, Elsevier

    Siegfried Selberherr

26. 
    Microstructural impact on electromigration reliability of gold interconnects

    Article • Solid-State Electronics, February 2023, Elsevier

    Siegfried Selberherr

27. 
    Comprehensive evaluation of torques in ultra-scaled MRAM devices

    Article • Solid-State Electronics, January 2023, Elsevier

    Siegfried Selberherr

28. 
    Finite Element Method for MRAM Switching Simulations

    Article • WSEAS TRANSACTIONS ON SYSTEMS AND CONTROL, December 2022, World Scientific and Engineering Academy and Society (WSEAS)

    Siegfried Selberherr

29. 
    Spin and charge drift-diffusion in ultra-scaled MRAM cells

    Article • Scientific Reports, December 2022, Springer Science + Business Media

    Siegfried Selberherr

30. 
    Spin-Based Devices for Digital Applications

    Article • November 2022, Springer Science + Business Media

    Siegfried Selberherr

31. 
    Macroscopic Transport Models for Classical Device Simulation

    Article • November 2022, Springer Science + Business Media

    Siegfried Selberherr

32. 
    About electron transport and spin control in semiconductor devices

    Article • Solid-State Electronics, November 2022, Elsevier

    Siegfried Selberherr

33. 
    Design Analysis of Ultra-Scaled MRAM Cells

    Article • October 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Siegfried Selberherr

34. 
    Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors

    Article • Nanomaterials, October 2022, MDPI AG

    Siegfried Selberherr

35. 
    Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials

    Article • Nanomaterials, October 2022, MDPI AG

    Siegfried Selberherr

36. 
    Impact of Gold Interconnect Microstructure on Electromigration Failure Time Statistics

    Article • September 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Siegfried Selberherr

37. 
    Spin Torques in ULTRA-Scaled MRAM Devices

    Article • September 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Siegfried Selberherr

38. 
    Spin and Charge Drift-Diffusion in Ultra-Scaled MRAM Cells

    Article • August 2022, Research Square

    Siegfried Selberherr

39. 
    Double Reference Layer STT-MRAM Structures with Improved Performance

    Article • Solid-State Electronics, August 2022, Elsevier

    Siegfried Selberherr

40. 
    Finite element modeling of spin–orbit torques

    Article • Solid-State Electronics, August 2022, Elsevier

    Siegfried Selberherr

41. 
    Interface effects in ultra-scaled MRAM cells

    Article • Solid-State Electronics, August 2022, Elsevier

    Siegfried Selberherr

42. 
    Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach

    Article • Journal of Systemics Cybernetics and Informatics, August 2022, International Institute of Informatics and Cybernetics

    Siegfried Selberherr

43. 
    Statistical Study of Electromigration in Gold Interconnects

    Article • July 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Siegfried Selberherr

44. 
    About the Switching Energy of a Magnetic Tunnel Junction determined by Spin-Orbit Torque and Voltage-Controlled Magnetic Anisotropy

    Article • July 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Siegfried Selberherr

45. 
    Temperature increase in STT-MRAM at writing: A fully three-dimensional finite element approach

    Article • Solid-State Electronics, July 2022, Elsevier

    Siegfried Selberherr

46. 
    Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach

    Article • July 2022, International Institute of Informatics and Cybernetics

    Siegfried Selberherr

47. 
    Electromigration Degradation of Gold Interconnects: A Statistical Study

    Article • June 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Siegfried Selberherr

48. 
    Spin Transfer Torques in Ultra-Scaled MRAM Cells

    Article • May 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Siegfried Selberherr

49. 
    Magnetic and Spin Devices

    Article • April 2022, MDPI AG

    Siegfried Selberherr

50. 
    A review of quantum transport in field-effect transistors

    Article • Semiconductor Science and Technology, February 2022, Institute of Physics Publishing

    Siegfried Selberherr

51. 
    Advances in modeling emerging magnetoresistive random access memories: from finite element methods to machine learning approaches

    Article • January 2022, SPIE

    Siegfried Selberherr

52. 
    Modeling advanced spintronic based magnetoresistive memory

    Article • January 2022, the Institution of Engineering and Technology (the IET)

    Siegfried Selberherr

53. 
    Geometric advection and its application in the emulation of high aspect ratio structures

    Article • Computer Methods in Applied Mechanics and Engineering, December 2021, Elsevier

    Siegfried Selberherr

54. 
    Coupled spin and charge drift-diffusion approach applied to magnetic tunnel junctions

    Article • Solid-State Electronics, December 2021, Elsevier

    Siegfried Selberherr

55. 
    Two-pulse switching scheme and reinforcement learning for energy efficient SOT-MRAM simulations

    Article • Solid-State Electronics, November 2021, Elsevier

    Siegfried Selberherr

56. 
    Improving failure rates in pulsed SOT-MRAM switching by reinforcement learning

    Article • Microelectronics Reliability, November 2021, Elsevier

    Siegfried Selberherr

57. 
    Subbands in a nanoribbon of topologically insulating MoS2 in the 1T′ phase

    Article • Solid-State Electronics, October 2021, Elsevier

    Siegfried Selberherr

58. 
    Combined Process Simulation and Emulation of an SRAM Cell of the 5nm Technology Node

    Article • September 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Siegfried Selberherr

59. 
    Finite Element Method Approach to MRAM Modeling

    Article • September 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Siegfried Selberherr

60. 
    Reinforcement Learning Approach for Sub-Critical Current SOT-MRAM Switching

    Article • September 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Siegfried Selberherr

61. 
    Spin and Charge Drift-Diffusion Approach to Torque Computation in Magnetic Tunnel Junctions

    Article • September 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Siegfried Selberherr

62. 
    Reinforcement Learning to Reduce Failures in SOT-MRAM Switching

    Article • September 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Siegfried Selberherr

63. 
    Gas Sensing with Two-Dimensional Materials Beyond Graphene

    Article • September 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Siegfried Selberherr

64. 
    Temperature Increase in MRAM at Writing: A Finite Element Approach

    Article • September 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Siegfried Selberherr

65. 
    Reinforcement learning approach for deterministic SOT-MRAM switching

    Article • August 2021, SPIE

    Siegfried Selberherr

66. 
    Electromagnetic Coherent Electron Control

    Article • April 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Siegfried Selberherr

67. 
    Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning

    Article • Micromachines, April 2021, MDPI AG

    Siegfried Selberherr

68. 
    Review—Modeling Methods for Analysis of Electromigration Degradation in Nano-Interconnects

    Article • ECS Journal of Solid State Science and Technology, March 2021, The Electrochemical Society

    Siegfried Selberherr

69. 
    Nanowire Field-Effect Transistor (FET)

    Article • February 2021, MDPI AG

    Siegfried Selberherr

70. 
    A computational approach for investigating Coulomb interaction using Wigner–Poisson coupling

    Article • Journal of Computational Electronics, January 2021, Springer Science + Business Media

    Siegfried Selberherr

71. 
    Concepts of Device Modeling

    Article • January 2021, Springer Science + Business Media

    Siegfried Selberherr

72. 
    Emerging CMOS Compatible Magnetic Memories and Logic

    Article • IEEE Journal of the Electron Devices Society, January 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Siegfried Selberherr

73. 
    Event Biasing

    Article • January 2021, Springer Science + Business Media

    Siegfried Selberherr

74. 
    Evolution in a Quantum Wire

    Article • January 2021, Springer Science + Business Media

    Siegfried Selberherr

75. 
    General Transport: Self-Consistent Mixed Problem

    Article • January 2021, Springer Science + Business Media

    Siegfried Selberherr

76. 
    Hierarchy of Kinetic Models

    Article • January 2021, Springer Science + Business Media

    Siegfried Selberherr

77. 
    Homogeneous Transport: Empirical Approach

    Article • January 2021, Springer Science + Business Media

    Siegfried Selberherr

78. 
    Homogeneous Transport: Stochastic Approach

    Article • January 2021, Springer Science + Business Media

    Siegfried Selberherr

79. 
    Inhomogeneous Stationary Transport

    Article • January 2021, Springer Science + Business Media

    Siegfried Selberherr

80. 
    Microstructure and Granularity Effects in Electromigration

    Article • IEEE Journal of the Electron Devices Society, January 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Siegfried Selberherr

81. 
    Monte Carlo Computing

    Article • January 2021, Springer Science + Business Media

    Siegfried Selberherr

82. 
    Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell

    Article • IEEE Journal of the Electron Devices Society, January 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Siegfried Selberherr

83. 
    Self-consistent Monte Carlo Solution of Wigner and Poisson Equations Using an Efficient Multigrid Approach

    Article • January 2021, Springer Science + Business Media

    Siegfried Selberherr

84. 
    Small Signal Analysis

    Article • January 2021, Springer Science + Business Media

    Siegfried Selberherr

85. 
    Stationary Quantum Particle Attributes

    Article • January 2021, Springer Science + Business Media

    Siegfried Selberherr

86. 
    Stochastic Approaches to Electron Transport in Micro- and Nanostructures

    Article • January 2021, Springer Science + Business Media

    Siegfried Selberherr

87. 
    The Semiconductor Model: Fundamentals

    Article • January 2021, Springer Science + Business Media

    Siegfried Selberherr

88. 
    Transient Quantum Particle Attributes

    Article • January 2021, Springer Science + Business Media

    Siegfried Selberherr

89. 
    Transport Theories in Phase Space

    Article • January 2021, Springer Science + Business Media

    Siegfried Selberherr

90. 
    Wigner Function Modeling

    Article • January 2021, Springer Science + Business Media

    Siegfried Selberherr

91. 
    Ballistic Conductance in a Topological 1T '-MoS2 Nanoribbon

    Article • Semiconductors, December 2020, Pleiades Publishing Ltd

    Siegfried Selberherr

92. 
    Conductance in a Nanoribbon of Topologically Insulating MoS2 in the 1T’ Phase

    Article • IEEE Transactions on Electron Devices, November 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Siegfried Selberherr

93. 
    Complex Systems in Phase Space

    Article • Entropy, September 2020, MDPI AG

    Siegfried Selberherr

94. 
    Computation of Torques in Magnetic Tunnel Junctions through Spin and Charge Transport Modeling

    Article • September 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Siegfried Selberherr

95. 
    Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells

    Article • September 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Siegfried Selberherr

96. 
    Geometric Advection Algorithm for Process Emulation

    Article • September 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Siegfried Selberherr

97. 
    Comprehensive Modeling of Coupled Spin and Charge Transport through Magnetic Tunnel Junctions

    Article • September 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Siegfried Selberherr

98. 
    Reduced Current Spin-Orbit Torque Switching of a Perpendicularly Magnetized Free Layer

    Article • September 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Siegfried Selberherr

99. 
    Topologically Protected and Conventional Subbands in a 1T’ -MoS2 Nanoribbon Channel

    Article • September 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Siegfried Selberherr

100. 
     Comprehensive modeling of coupled spin-charge transport and magnetization dynamics in STT-MRAM cells

     Article • August 2020, SPIE

     Siegfried Selberherr

101. 
     Parallel Correction for Hierarchical Re-Distancing Using the Fast Marching Method

     Article • August 2020, Springer Science + Business Media

     Siegfried Selberherr

102. 
     Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T’ Phase: A k·p Study

     Article • June 2020, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

103. 
     Robust magnetic field-free switching of a perpendicularly magnetized free layer for SOT-MRAM

     Article • Solid-State Electronics, June 2020, Elsevier

     Siegfried Selberherr

104. 
     Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM

     Article • ECS Meeting Abstracts, May 2020, The Electrochemical Society

     Siegfried Selberherr

105. 
     Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM

     Article • ECS Transactions, April 2020, The Electrochemical Society

     Siegfried Selberherr

106. 
     Integration of Gas Sensors with CMOS Technology

     Article • April 2020, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

107. 
     Perpendicular STT-MRAM Switching at Fixed Voltage and at Fixed Current

     Article • April 2020, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

108. 
     Emerging CMOS Compatible Magnetic Memories and Logic

     Article • February 2020, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

109. 
     Granularity Effects in Electromigration

     Article • February 2020, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

110. 
     A Monte Carlo Evaluation of the Current and Low Frequency Current Noise at Spin-Dependent Hopping

     Article • January 2020, Springer Science + Business Media

     Siegfried Selberherr

111. 
     Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAM

     Article • IEEE Journal of the Electron Devices Society, January 2020, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

112. 
     Parallelized Construction of Extension Velocities for the Level-Set Method

     Article • January 2020, Springer Science + Business Media

     Siegfried Selberherr

113. 
     The Level-Set Method for Multi-Material Wet Etching and Non-Planar Selective Epitaxy

     Article • IEEE Access, January 2020, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

114. 
     CMOS Technology Compatible Magnetic Memories

     Article • October 2019, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

115. 
     Mobility of Circular and Elliptical Si Nanowire Transistors Using a Multi-Subband 1D Formalism

     Article • IEEE Electron Device Letters, October 2019, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

116. 
     Magnetic field-free deterministic switching of a perpendicular magnetic layer by spin-orbit torques

     Article • September 2019, SPIE

     Siegfried Selberherr

117. 
     CMOS-Compatible Gas Sensors

     Article • September 2019, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

118. 
     Novel Numerical Dissipation Scheme for Level-Set Based Anisotropic Etching Simulations

     Article • September 2019, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

119. 
     Parallelized Level-Set Velocity Extension Algorithm for Nanopatterning Applications

     Article • September 2019, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

120. 
     Process Simulation in the Browser: Porting ViennaTS using WebAssembly

     Article • September 2019, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

121. 
     Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM

     Article • September 2019, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

122. 
     Current and shot noise at spin-dependent hopping through junctions with ferromagnetic contacts

     Article • Solid-State Electronics, September 2019, Elsevier

     Siegfried Selberherr

123. 
     Thermo-Electro-Mechanical Simulation of Semiconductor Metal Oxide Gas Sensors

     Article • Materials, July 2019, MDPI AG

     Siegfried Selberherr

124. 
     Surface Morphology of 4H-SiC after Thermal Oxidation

     Article • Materials Science Forum, July 2019, Trans Tech Publications

     Dr Hans Sigg, Siegfried Selberherr

125. 
     A Flexible Shared-Memory Parallel Mesh Adaptation Framework

     Article • July 2019, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

126. 
     Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics

     Article • IEEE Transactions on Electron Devices, July 2019, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

127. 
     Spin-Based CMOS-Compatible Memories

     Article • July 2019, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

128. 
     Miniaturized Transistors

     Article • June 2019, MDPI AG

     Siegfried Selberherr

129. 
     Electro-Thermal-Mechanical Modeling of Gas Sensor Hotplates

     Article • June 2019, Springer Science + Business Media

     Siegfried Selberherr

130. 
     Two-pulse sub-ns switching scheme for advanced spin-orbit torque MRAM

     Article • Solid-State Electronics, May 2019, Elsevier

     Siegfried Selberherr

131. 
     A shared memory parallel multi-mesh fast marching method for re-distancing

     Article • Advances in Computational Mathematics, April 2019, Springer Science + Business Media

     Siegfried Selberherr

132. 
     Efficient Magnetic Field-Free Switching of a Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM

     Article • April 2019, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

133. 
     Combining Perpendicular and Shape Anisotropy for Optimal Switching of Advanced Spin-Orbit Torque Memory Cells

     Article • March 2019, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

134. 
     Energy Efficient Computing & Electronics

     Article • January 2019, Taylor & Francis

     Siegfried Selberherr

135. 
     Wigner equation for general electromagnetic fields: The Weyl-Stratonovich transform

     Article • January 2019, American Physical Society (APS)

     Siegfried Selberherr

136. 
     Improved Sensing Capability of Integrated Semiconducting Metal Oxide Gas Sensor Devices

     Article • Sensors, January 2019, MDPI AG

     Siegfried Selberherr

137. 
     Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors

     Article • Materials, January 2019, MDPI AG

     Siegfried Selberherr

138. 
     A Wigner Potential Decomposition in the Signed-Particle Monte Carlo Approach

     Article • January 2019, Springer Science + Business Media

     Siegfried Selberherr

139. 
     Evaluation of Serial and Parallel Shared-Memory Distance-1 Graph Coloring Algorithms

     Article • January 2019, Springer Science + Business Media

     Siegfried Selberherr

140. 
     Enhanced Sensing Performance of Integrated Gas Sensor Devices

     Article • Proceedings, December 2018, MDPI AG

     Siegfried Selberherr

141. 
     Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review

     Article • Micromachines, November 2018, MDPI AG

     Siegfried Selberherr

142. 
     Accelerating Flux Calculations Using Sparse Sampling

     Article • Micromachines, October 2018, MDPI AG

     Siegfried Selberherr

143. 
     Nanowire FETs

     Article • October 2018, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

144. 
     Spin correlations at hopping in magnetic structures: from tunneling magnetoresistance to single-spin transistor

     Article • September 2018, SPIE

     Siegfried Selberherr

145. 
     Field-free Fast Reliable Deterministic Switching in Perpendicular Spin-Orbit Torque MRAM Cells

     Article • September 2018, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

146. 
     Impact of the Effective Mass on the Mobility in Si Nanowire Transistors

     Article • September 2018, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

147. 
     Steady-State Empirical Model for Electrical Activation of Silicon-Implanted Gallium Nitride

     Article • September 2018, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

148. 
     Stochastic analysis of surface roughness models in quantum wires

     Article • Computer Physics Communications, July 2018, Elsevier

     Siegfried Selberherr

149. 
     Transient model for electrical activation of aluminium and phosphorus-implanted silicon carbide

     Article • Journal of Applied Physics, June 2018, American Institute of Physics

     Siegfried Selberherr

150. 
     Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide

     Article • Materials Science Forum, June 2018, Trans Tech Publications

     Siegfried Selberherr

151. 
     Ultra-Fast Switching of a Free Magnetic Layer with Out-of-Plane Magnetization in Spin-Orbit Torque MRAM Cells

     Article • ECS Transactions, April 2018, The Electrochemical Society

     Siegfried Selberherr

152. 
     Modeling and Simulation of Novel Semiconducting Metal Oxide Gas Sensors for Wearable Devices

     Article • IEEE Sensors Journal, March 2018, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

153. 
     Current and shot noise at spin-dependent hopping through magnetic tunnel junctions

     Article • March 2018, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

154. 
     Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors

     Article • March 2018, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

155. 
     Switching current reduction in advanced spin-orbit torque MRAM

     Article • March 2018, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

156. 
     Unified feature scale model for etching in SF6 and Cl plasma chemistries

     Article • March 2018, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

157. 
     Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon Carbide

     Article • IEEE Transactions on Electron Devices, February 2018, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

158. 
     Demands for spin-based nonvolatility in emerging digital logic and memory devices for low power computing

     Article • Facta universitatis - series Electronics and Energetics, January 2018, National Library of Serbia

     Siegfried Selberherr

159. 
     Sparse Surface Speed Evaluation on a Dynamic Three-Dimensional Surface Using an Iterative Partitioning Scheme

     Article • January 2018, Springer Science + Business Media

     Siegfried Selberherr

160. 
     Simulation of Injection Currents into Disordered Molecular Conductors

     Article • Materials Today Proceedings, January 2018, Elsevier

     Siegfried Selberherr

161. 
     Micro- and Nanoelectronics

     Article • December 2017, Taylor & Francis

     Siegfried Selberherr

162. 
     ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation

     Article • The Journal of Physical Chemistry A, November 2017, American Chemical Society (ACS)

     Siegfried Selberherr

163. 
     Non-volatility by spin in modern nanoelectronics

     Article • October 2017, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

164. 
     Accelerated direct flux calculations using an adaptively refined icosahedron

     Article • September 2017, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

165. 
     Modeling electromigration in nanoscaled copper interconnects

     Article • September 2017, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

166. 
     Modeling of electrical activation ratios of phosphorus and nitrogen doped silicon carbide

     Article • September 2017, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

167. 
     Analysis of lense-governed Wigner signed particle quantum dynamics (Phys. Status Solidi RRL 7/2017)

     Article • physica status solidi (RRL) - Rapid Research Letters, July 2017, Wiley

     Siegfried Selberherr

168. 
     Evaluation of the shared-memory parallel Fast Marching Method for re-distancing problems

     Article • July 2017, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

169. 
     Analysis of lense-governed Wigner signed particle quantum dynamics

     Article • physica status solidi (RRL) - Rapid Research Letters, May 2017, Wiley

     Siegfried Selberherr

170. 
     Anisotropic interpolation method of silicon carbide oxidation growth rates for three-dimensional simulation

     Article • Solid-State Electronics, February 2017, Elsevier

     Siegfried Selberherr

171. 
     Framework to model neutral particle flux in convex high aspect ratio structures using one-dimensional radiosity

     Article • Solid-State Electronics, February 2017, Elsevier

     Siegfried Selberherr

172. 
     Special Issue of Solid-State Electronics, dedicated to EUROSOI-ULIS 2016

     Article • Solid-State Electronics, February 2017, Elsevier

     Siegfried Selberherr

173. 
     Using Temporary Explicit Meshes for Direct Flux Calculation on Implicit Surfaces

     Article • Procedia Computer Science, January 2017, Elsevier

     Siegfried Selberherr

174. 
     Stress Considerations for System-on-Chip Gas Sensor Integration in CMOS Technology

     Article • IEEE Transactions on Device and Materials Reliability, December 2016, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

175. 
     Stress Evolution During Nanoindentation in Open TSVs

     Article • IEEE Transactions on Device and Materials Reliability, December 2016, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

176. 
     CMOS-compatible spintronic devices: a review

     Article • Semiconductor Science and Technology, October 2016, Institute of Physics Publishing

     Siegfried Selberherr

177. 
     Growth rates of dry thermal oxidation of 4H-silicon carbide

     Article • Journal of Applied Physics, October 2016, American Institute of Physics

     Siegfried Selberherr

178. 
     Layer coupling and read disturbances in a buffered magnetic logic environment

     Article • September 2016, SPIE

     Siegfried Selberherr

179. 
     A Universal Nonvolatile Processing Environment

     Article • September 2016, Wiley

     Siegfried Selberherr

180. 
     Magnetic field dependent tunneling magnetoresistance through a quantum well between ferromagnetic contacts

     Article • September 2016, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

181. 
     The exploitation of magnetization orientation encoded spin-transfer torque for an ultra dense non-volatile magnetic shift register

     Article • September 2016, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

182. 
     Three-dimensional growth rate modeling and simulation of silicon carbide thermal oxidation

     Article • September 2016, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

183. 
     Using one-dimensional radiosity to model neutral flux in convex high aspect ratio structures

     Article • September 2016, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

184. 
     INSTITUT FÜR MIKROELEKTRONIK / INSTITUTE FOR MICROELECTRONICS

     Article • August 2016, Brill Osterreich GmbH

     Siegfried Selberherr

185. 
     Stress in three-dimensionally integrated sensor systems

     Article • Microelectronics Reliability, June 2016, Elsevier

     Siegfried Selberherr

186. 
     Effects of the Deposition Process Variation on the Performance of Open TSVs

     Article • May 2016, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

187. 
     Impact of across-wafer variation on the electrical performance of TSVs

     Article • May 2016, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

188. 
     Device physics, modeling, and technology for nano-scaled semiconductor devices

     Article • May 2016, the Institution of Engineering and Technology (the IET)

     Siegfried Selberherr

189. 
     Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation

     Article • April 2016, De Gruyter

     Siegfried Selberherr

190. 
     Enhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial Stress

     Article • Journal of Nano Research, February 2016, Trans Tech Publications

     Siegfried Selberherr

191. 
     Direction dependent three-dimensional silicon carbide oxidation growth rate calculations

     Article • January 2016, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

192. 
     Influence of spin relaxation on trap-assisted resonant tunneling in ferromagnet-oxide-semiconductor structures

     Article • January 2016, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

193. 
     Preface

     Article • January 2016, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

194. 
     Using one-dimensional radiosity to model neutral particle flux in high aspect ratio holes

     Article • January 2016, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

195. 
     ViennaCL---Linear Algebra Library for Multi- and Many-Core Architectures

     Article • SIAM Journal on Scientific Computing, January 2016, Society for Industrial & Applied Mathematics (SIAM)

     Siegfried Selberherr

196. 
     Electron Momentum and Spin Relaxation in Silicon Films

     Article • January 2016, Springer Science + Business Media

     Siegfried Selberherr

197. 
     Evaluation of Mobile ARM-Based SoCs for High Performance Computing

     Article • January 2016, Society for Modeling and Simulation International (SCS)

     Siegfried Selberherr

198. 
     Neumann Series Analysis of the Wigner Equation Solution

     Article • January 2016, Springer Science + Business Media

     Siegfried Selberherr

199. 
     Processing of integrated gas sensor devices

     Article • November 2015, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

200. 
     Intersubband spin relaxation reduction and spin lifetime enhancement by strain in SOI structures

     Article • Microelectronic Engineering, November 2015, Elsevier

     Siegfried Selberherr

201. 
     SOT-MRAM based on 1Transistor-1MTJ-cell structure

     Article • October 2015, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

202. 
     Electron mobility and spin lifetime enhancement in strained ultra-thin silicon films

     Article • Solid-State Electronics, October 2015, Elsevier

     Siegfried Selberherr

203. 
     Injection direction sensitive spin lifetime model in a strained thin silicon film

     Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

204. 
     Global statistical methodology for the analysis of equipment parameter effects on TSV formation

     Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

205. 
     Improved drive-current into nanoscaled channels using electrostatic lenses

     Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

206. 
     Improving the performance of a non-volatile magnetic flip flop by exploiting the spin Hall effect

     Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

207. 
     Influence of valley splitting on spin relaxation time in a strained thin silicon film

     Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

208. 
     Memory-efficient particle annihilation algorithm for Wigner Monte Carlo simulations

     Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

209. 
     ViennaMaterials – A dedicated material library for computational science and engineering

     Article • Applied Mathematics and Computation, September 2015, Elsevier

     Siegfried Selberherr

210. 
     Transformation invariant local element size specification

     Article • Applied Mathematics and Computation, September 2015, Elsevier

     Siegfried Selberherr

211. 
     CMOS-compatible spintronic devices

     Article • August 2015, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

212. 
     Intrinsic stress analysis of tungsten-lined open TSVs

     Article • Microelectronics Reliability, August 2015, Elsevier

     Siegfried Selberherr

213. 
     The Wigner equation in the presence of electromagnetic potentials

     Article • Journal of Computational Electronics, July 2015, Springer Science + Business Media

     Siegfried Selberherr

214. 
     Boundary conditions and the Wigner equation solution

     Article • Journal of Computational Electronics, July 2015, Springer Science + Business Media

     Siegfried Selberherr

215. 
     Silicon spintronics: Progress and challenges

     Article • Physics Reports, July 2015, Elsevier

     Siegfried Selberherr

216. 
     Influence of magnetization variations in the free layer on a non-volatile magnetic flip flop

     Article • Solid-State Electronics, June 2015, Elsevier

     Siegfried Selberherr

217. 
     Compact model for solder bump electromigration failure

     Article • May 2015, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

218. 
     Spin-based devices for future microelectronics

     Article • May 2015, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

219. 
     Coupled simulation to determine the impact of across wafer variations in oxide PECVD on electrical and reliability parameters of through-silicon vias

     Article • Microelectronic Engineering, April 2015, Elsevier

     Siegfried Selberherr

220. 
     Novel Buffered Magnetic Logic Gate Grid

     Article • ECS Transactions, March 2015, The Electrochemical Society

     Siegfried Selberherr

221. 
     Stress Considerations in Thin Films for CMOS-Integrated Gas Sensors

     Article • ECS Transactions, March 2015, The Electrochemical Society

     Siegfried Selberherr

222. 
     Variation of Spin Lifetime with Spin Injection Orientation in Strained Thin Silicon Films

     Article • ECS Transactions, March 2015, The Electrochemical Society

     Siegfried Selberherr

223. 
     (Invited) Spin-Based Silicon and CMOS-Compatible Devices

     Article • ECS Transactions, March 2015, The Electrochemical Society

     Siegfried Selberherr

224. 
     Performance and Stress Analysis of Metal Oxide Films for CMOS-Integrated Gas Sensors

     Article • Sensors, March 2015, MDPI AG

     Siegfried Selberherr

225. 
     Modelling of multipurpose spintronic devices

     Article • International Journal of Nanotechnology, January 2015, Inderscience Publishers

     Siegfried Selberherr

226. 
     Dependence of spin lifetime on spin injection orientation in strained silicon films

     Article • January 2015, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

227. 
     A comparison of approaches for the solution of the Wigner equation

     Article • Mathematics and Computers in Simulation, January 2015, Elsevier

     Siegfried Selberherr

228. 
     Evaluation of Spin Lifetime in Thin-Body FETs: A High Performance Computing Approach

     Article • January 2015, Springer Science + Business Media

     Siegfried Selberherr

229. 
     Free Open Source Mesh Healing for TCAD Device Simulations

     Article • January 2015, Springer Science + Business Media

     Siegfried Selberherr

230. 
     Optimized Particle Regeneration Scheme for the Wigner Monte Carlo Method

     Article • January 2015, Springer Science + Business Media

     Siegfried Selberherr

231. 
     Parallelization of the Two-Dimensional Wigner Monte Carlo Method

     Article • January 2015, Springer Science + Business Media

     Siegfried Selberherr

232. 
     Spin-Based CMOS-Compatible Devices

     Article • January 2015, Springer Science + Business Media

     Siegfried Selberherr

233. 
     The Influence of Electrostatic Lenses on Wave Packet Dynamics

     Article • January 2015, Springer Science + Business Media

     Siegfried Selberherr

234. 
     Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer

     Article • December 2014, World Scientific Pub Co Pte Lt

     Siegfried Selberherr

235. 
     Spin injection in a semiconductor through a space-charge layer

     Article • Solid-State Electronics, November 2014, Elsevier

     Siegfried Selberherr

236. 
     Highly flexible and reusable finite element simulations with ViennaX

     Article • Journal of Computational and Applied Mathematics, November 2014, Elsevier

     Siegfried Selberherr

237. 
     The meshing framework ViennaMesh for finite element applications

     Article • Journal of Computational and Applied Mathematics, November 2014, Elsevier

     Siegfried Selberherr

238. 
     Distributed-memory parallelization of the Wigner Monte Carlo method using spatial domain decomposition

     Article • Journal of Computational Electronics, October 2014, Springer Science + Business Media

     Siegfried Selberherr

239. 
     Spray pyrolysis deposition for gas sensor integration in the backend of standard CMOS processes

     Article • October 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

240. 
     On the material depletion rate due to electromigration in a copper TSV structure

     Article • October 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

241. 
     Electromigration in solder bumps: A mean-time-to-failure TCAD study

     Article • September 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

242. 
     Electromigration induced resistance increase in open TSVs

     Article • September 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

243. 
     Increasing mobility and spin lifetime with shear strain in thin silicon films

     Article • September 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

244. 
     Influence of device geometry on the non-volatile magnetic flip flop characteristics

     Article • September 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

245. 
     Manufacturing of 3D integrated sensors and circuits

     Article • September 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

246. 
     Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer

     Article • International Journal of High Speed Electronics and Systems, September 2014, World Scientific Pub Co Pte Lt

     Siegfried Selberherr

247. 
     Template-based mesh generation for semiconductor devices

     Article • September 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

248. 
     The Wigner Monte Carlo method for accurate semiconductor device simulation

     Article • September 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

249. 
     Three-dimensional simulation for the reliability and electrical performance of through-silicon vias

     Article • September 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

250. 
     Electromigration reliability of open TSV structures

     Article • Microelectronics Reliability, September 2014, Elsevier

     Siegfried Selberherr

251. 
     The effects of etching and deposition on the performance and stress evolution of open through silicon vias

     Article • Microelectronics Reliability, September 2014, Elsevier

     Siegfried Selberherr

252. 
     Investigation of Novel Silicon PV Cells of a Lateral Type

     Article • Silicon, August 2014, Springer Science + Business Media

     Siegfried Selberherr

253. 
     Spin diffusion and the role of screening effects in semiconductors

     Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

254. 
     Compact modeling of memristive IMP gates for reliable stateful logic design

     Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

255. 
     Effects of sidewall scallops on the performance and reliability of filled copper and open tungsten TSVs

     Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

256. 
     Efficient calculation of the two-dimensional Wigner potential

     Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

257. 
     Frequency dependence study of a bias field-free nano-scale oscillator

     Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

258. 
     Implications of the coherence length on the discrete Wigner potential

     Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

259. 
     Magnetic tunnel junctions for future memory and logic-in-memory applications

     Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

260. 
     Spin lifetime in strained silicon films

     Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

261. 
     Valley splitting and spin lifetime enhancement in strained thin silicon films

     Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

262. 
     Effects of sidewall scallops on open tungsten TSVs

     Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

263. 
     Electromigration reliability of open TSV structures

     Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

264. 
     Electromigration reliability of solder bumps

     Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

265. 
     Novel bias-field-free spin transfer oscillator

     Article • Journal of Applied Physics, May 2014, American Institute of Physics

     Siegfried Selberherr

266. 
     Modeling spin-based electronic devices

     Article • May 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

267. 
     Modeling the Growth of Tin Dioxide Using Spray Pyrolysis Deposition for Gas Sensor Applications

     Article • IEEE Transactions on Semiconductor Manufacturing, May 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

268. 
     Electromigration induced failure of solder bumps and the role of IMC

     Article • May 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

269. 
     High performance MRAM-based stateful logic

     Article • April 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

270. 
     Influence of magnetization variations in the free layer on a non-volatile magnetic flip flop

     Article • April 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

271. 
     Modeling of spin-based silicon technology

     Article • April 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

272. 
     Process and reliability of SF6/O2 plasma etched copper TSVs

     Article • April 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

273. 
     Methods of simulating thin film deposition using spray pyrolysis techniques

     Article • Microelectronic Engineering, April 2014, Elsevier

     Siegfried Selberherr

274. 
     Composite magnetic tunnel junctions for fast memory devices and efficient spin-torque nano-oscillators

     Article • March 2014, WITPRESS LTD.

     Siegfried Selberherr

275. 
     Electron dynamics in nanoscale transistors by means of Wigner and Boltzmann approaches

     Article • Physica A Statistical Mechanics and its Applications, March 2014, Elsevier

     Siegfried Selberherr

276. 
     Spin injection and diffusion in silicon based devices from a space charge layer

     Article • Journal of Applied Physics, January 2014, American Institute of Physics

     Siegfried Selberherr

277. 
     A benchmark study of the Wigner Monte Carlo method

     Article • Monte Carlo Methods and Applications, January 2014, De Gruyter

     Siegfried Selberherr

278. 
     Implementation and analysis of an adaptive multilevel Monte Carlo algorithm

     Article • Monte Carlo Methods and Applications, January 2014, De Gruyter

     Siegfried Selberherr

279. 
     Microstructural impact on electromigration: A TCAD study

     Article • Facta universitatis - series Electronics and Energetics, January 2014, National Library of Serbia

     Siegfried Selberherr

280. 
     Modeling and Analysis of Spray Pyrolysis Deposited SnO2 Films for Gas Sensors

     Article • January 2014, Springer Science + Business Media

     Siegfried Selberherr

281. 
     Modeling of microstructural effects on electromigration failure

     Article • January 2014, American Institute of Physics

     Siegfried Selberherr

282. 
     Stochastic Formulation of Newton’s Acceleration

     Article • January 2014, Springer Science + Business Media

     Siegfried Selberherr

283. 
     The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation

     Article • January 2014, Springer Science + Business Media

     Siegfried Selberherr

284. 
     The Role of Annihilation in a Wigner Monte Carlo Approach

     Article • January 2014, Springer Science + Business Media

     Siegfried Selberherr

285. 
     Uniaxial Shear Strain as a Mechanism to Increase Spin Lifetime in Thin Film of a SOI-Based Silicon Spin FETs

     Article • January 2014, Springer Science + Business Media

     Siegfried Selberherr

286. 
     Reliability Analysis and Comparison of Implication and Reprogrammable Logic Gates in Magnetic Tunnel Junction Logic Circuits

     Article • IEEE Transactions on Magnetics, December 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

287. 
     Subband splitting and surface roughness induced spin relaxation in (001) silicon SOI MOSFETs

     Article • Solid-State Electronics, December 2013, Elsevier

     Siegfried Selberherr

288. 
     Simulation study of an electrically read- and writable magnetic logic gate

     Article • Microelectronic Engineering, December 2013, Elsevier

     Siegfried Selberherr

289. 
     Decoherence and time reversibility: The role of randomness at interfaces

     Article • Journal of Applied Physics, November 2013, American Institute of Physics

     Siegfried Selberherr

290. 
     Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films

     Article • Advanced Materials Research, November 2013, Trans Tech Publications

     Siegfried Selberherr

291. 
     Reliability-Based Optimization of Spin-Transfer Torque Magnetic Tunnel Junction Implication Logic Gates

     Article • Advanced Materials Research, November 2013, Trans Tech Publications

     Siegfried Selberherr

292. 
     Electromigration induced stress in open TSVs

     Article • October 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

293. 
     Electromigration enhanced growth of intermetallic compound in solder bumps

     Article • October 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

294. 
     Structural optimization of MTJs with a composite free layer

     Article • September 2013, SPIE

     Siegfried Selberherr

295. 
     Electromigration analyses of open TSVs

     Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

296. 
     Evaluation of spin lifetime in strained UT2B silicon-on-insulator MOSFETs

     Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

297. 
     Impact of intermetallic compound on solder bump electromigration reliability

     Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

298. 
     Influence of temperature on the standard deviation of electromigration lifetimes

     Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

299. 
     Modeling the growth of thin SnO2 films using spray pyrolysis deposition

     Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

300. 
     Performance analysis and comparison of two 1T/1MTJ-based logic gates

     Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

301. 
     Quantum insights in gate oxide charge-trapping dynamics in nanoscale MOSFETs

     Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

302. 
     Reduction of momentum and spin relaxation rate in strained thin silicon films

     Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

303. 
     Rigorous simulation study of a novel non-volatile magnetic flip-flop

     Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

304. 
     Stress estimation in open tungsten TSV

     Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

305. 
     Two-dimensional transient wigner particle model

     Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

306. 
     Stress evolution in the metal layers of TSVs with Bosch scallops

     Article • Microelectronics Reliability, September 2013, Elsevier

     Siegfried Selberherr

307. 
     MRAM-based logic array for large-scale non-volatile logic-in-memory applications

     Article • July 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

308. 
     Novel MTJ-based shift register for non-volatile logic applications

     Article • July 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

309. 
     A method for simulating Atomic Force Microscope nanolithography in the Level Set framework

     Article • Microelectronic Engineering, July 2013, Elsevier

     Siegfried Selberherr

310. 
     Analysis of solder bump electromigration reliability

     Article • July 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

311. 
     Transverse domain wall formation in a free layer: A mechanism for switching failure in a MTJ-based STT-MRAM

     Article • July 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

312. 
     Using strain to increase the reliability of scaled spin MOSFETs

     Article • July 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

313. 
     Magnetic Tunnel Junctions with a Composite Free Layer: A New Concept for Future Universal Memory

     Article • June 2013, Wiley

     Siegfried Selberherr

314. 
     Decoherence effects in the Wigner function formalism

     Article • Journal of Computational Electronics, June 2013, Springer Science + Business Media

     Siegfried Selberherr

315. 
     Design and applications of magnetic tunnel junction based logic circuits

     Article • June 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

316. 
     Implication logic gates using spin-transfer-torque-operated magnetic tunnel junctions for intrinsic logic-in-memory

     Article • Solid-State Electronics, June 2013, Elsevier

     Siegfried Selberherr

317. 
     Physically based models of electromigration

     Article • June 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

318. 
     Spin Lifetime Enhancement by Shear Strain in Thin Silicon-On-Insulator Films

     Article • ECS Transactions, May 2013, The Electrochemical Society

     Siegfried Selberherr

319. 
     Wigner quasi-particle attributes—An asymptotic perspective

     Article • Frontiers in Human Neuroscience, April 2013, American Institute of Physics

     Siegfried Selberherr

320. 
     Influence of the valley degeneracy on spin relaxation in thin silicon films

     Article • March 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

321. 
     ViennaX: a parallel plugin execution framework for scientific computing

     Article • Engineering With Computers, February 2013, Springer Science + Business Media

     Siegfried Selberherr

322. 
     Physical scales in the Wigner–Boltzmann equation

     Article • Annals of Physics, January 2013, Elsevier

     Siegfried Selberherr

323. 
     A Flexible Dynamic Data Structure for Scientific Computing

     Article • January 2013, Springer Science + Business Media

     Siegfried Selberherr

324. 
     A Lightweight Task Graph Scheduler for Distributed High-Performance Scientific Computing

     Article • January 2013, Springer Science + Business Media

     Siegfried Selberherr

325. 
     Distributed High-Performance Parallel Mesh Generation with ViennaMesh

     Article • January 2013, Springer Science + Business Media

     Siegfried Selberherr

326. 
     Multiple purpose spin transfer torque operated devices

     Article • Facta universitatis - series Electronics and Energetics, January 2013, National Library of Serbia

     Siegfried Selberherr

327. 
     Strain-induced reduction of surface roughness dominated spin relaxation in MOSFETs

     Article • January 2013, American Institute of Physics

     Siegfried Selberherr

328. 
     We make electrons dance

     Article • January 2013, Springer Science + Business Media

     Siegfried Selberherr

329. 
     Influence of Geometry on the Memristive Behavior of the Domain Wall Spintronic Memristors and Its Applications for Measurement

     Article • Journal of Superconductivity and Novel Magnetism, December 2012, Springer Science + Business Media

     Siegfried Selberherr

330. 
     Thermo-mechanical simulations of an open tungsten TSV

     Article • December 2012, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

331. 
     Chapter 11. A Two-Dimensional Lorentzian Distribution for an Atomic Force Microscopy Simulator

     Article • November 2012, De Gruyter

     Siegfried Selberherr

332. 
     Chapter 22. Monte Carlo Investigations of Electron Decoherence due to Phonons

     Article • November 2012, De Gruyter

     Siegfried Selberherr

333. 
     Electrothermal analysis of In0.12Al0.88N/GaN HEMTs

     Article • November 2012, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

334. 
     Formation and movement of voids in copper interconnect structures

     Article • October 2012, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

335. 
     MTJ-based implication logic gates and circuit architecture for large-scale spintronic stateful logic systems

     Article • September 2012, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

336. 
     Electromigration failure in a copper dual-damascene structure with a through silicon via

     Article • Microelectronics Reliability, September 2012, Elsevier

     Siegfried Selberherr

337. 
     Analysis of Resistance Change Development Due to Voiding in Copper Interconnects Ended by A Through Silicon Via

     Article • ECS Transactions, August 2012, The Electrochemical Society

     Siegfried Selberherr

338. 
     Electric Field Based Simulations of Local Oxidation Nanolithography Using Atomic Force Microscopy in a Level Set Environment

     Article • ECS Transactions, August 2012, The Electrochemical Society

     Siegfried Selberherr

339. 
     Interconnect reliability dependence on fast diffusivity paths

     Article • Microelectronics Reliability, August 2012, Elsevier

     Siegfried Selberherr

340. 
     Ab initio method for electromigration analysis

     Article • July 2012, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

341. 
     Atomistic method for analysis of electromigration

     Article • June 2012, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

342. 
     Recent developments in advanced memory modeling

     Article • May 2012, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

343. 
     Temperature dependence of the transport properties of spin field-effect transistors built with InAs and Si channels

     Article • Solid-State Electronics, May 2012, Elsevier

     Siegfried Selberherr

344. 
     MTJs with a composite free layer for high-speed spin transfer torque RAM: Micromagnetic simulations

     Article • May 2012, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

345. 
     Particle-grid techniques for semiclassical and quantum transport simulations

     Article • May 2012, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

346. 
     Reduction of surface roughness induced spin relaxation in SOI MOSFETs

     Article • May 2012, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

347. 
     Role of the physical scales on the transport regime

     Article • May 2012, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

348. 
     Towards a free open source process and device simulation framework

     Article • May 2012, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

349. 
     Fast Switching in Magnetic Tunnel Junctions With Two Pinned Layers: Micromagnetic Modeling

     Article • IEEE Transactions on Magnetics, April 2012, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

350. 
     Emerging memory technologies: Trends, challenges, and modeling methods

     Article • Microelectronics Reliability, April 2012, Elsevier

     Siegfried Selberherr

351. 
     New trends in microelectronics: Towards an ultimate memory concept

     Article • March 2012, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

352. 
     New trends in microelectronics: Towards an ultimate memory concept

     Article • March 2012, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

353. 
     Physics-Based Modeling of GaN HEMTs

     Article • IEEE Transactions on Electron Devices, March 2012, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

354. 
     A Numerical Study of Line-Edge Roughness Scattering in Graphene Nanoribbons

     Article • IEEE Transactions on Electron Devices, February 2012, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

355. 
     A Monte Carlo Simulator for Non-contact Mode Atomic Force Microscopy

     Article • January 2012, Springer Science + Business Media

     Siegfried Selberherr

356. 
     Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins

     Article • January 2012, Springer Science + Business Media

     Siegfried Selberherr

357. 
     GPU-Accelerated Non-negative Matrix Factorization for Text Mining

     Article • January 2012, Springer Science + Business Media

     Siegfried Selberherr

358. 
     Phonon-Induced Decoherence in Electron Evolution

     Article • January 2012, Springer Science + Business Media

     Siegfried Selberherr

359. 
     Towards Distributed Heterogenous High-Performance Computing with ViennaCL

     Article • January 2012, Springer Science + Business Media

     Siegfried Selberherr

360. 
     Modeling Emerging Non-volatile Memories: Current Trends and Challenges

     Article • Physics Procedia, January 2012, Elsevier

     Siegfried Selberherr

361. 
     Domain-wall spintronic memristor for capacitance and inductance sensing

     Article • December 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

362. 
     Properties of InAs- and silicon-based ballistic spin field-effect transistors operated at elevated temperature

     Article • December 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

363. 
     Switching time and current reduction using a composite free layer in magnetic tunnel junctions

     Article • December 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

364. 
     An Analytical Model for Line-Edge Roughness Limited Mobility of Graphene Nanoribbons

     Article • IEEE Transactions on Electron Devices, November 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

365. 
     Modeling of advanced memories

     Article • November 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

366. 
     Strained MOSFETs on ordered SiGe dots

     Article • Solid-State Electronics, November 2011, Elsevier

     Siegfried Selberherr

367. 
     Compact modeling of interconnect reliability

     Article • November 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

368. 
     Ballistic Transport Properties of Spin Field-Effect Transistors Built on Silicon and InAs Fins

     Article • ECS Transactions, September 2011, The Electrochemical Society

     Siegfried Selberherr

369. 
     Modeling Electromigration Lifetimes of Copper Interconnects

     Article • ECS Transactions, September 2011, The Electrochemical Society

     Siegfried Selberherr

370. 
     Reduction of switching time in pentalayer magnetic tunnel junctions with a composite-free layer

     Article • physica status solidi (RRL) - Rapid Research Letters, September 2011, Wiley

     Siegfried Selberherr

371. 
     A Level Set simulator for nanooxidation using non-contact atomic force microscopy

     Article • September 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

372. 
     A compact model for early electromigration lifetime estimation

     Article • September 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

373. 
     High-quality mesh generation based on orthogonal software modules

     Article • September 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

374. 
     Multilevel simulation for the investigation of fast diffusivity paths

     Article • September 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

375. 
     Properties of InAs- and silicon-based ballistic spin field-effect transistors

     Article • September 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

376. 
     A compact model for early electromigration failures of copper dual-damascene interconnects

     Article • Microelectronics Reliability, September 2011, Elsevier

     Siegfried Selberherr

377. 
     Hierarchical Simulation of Process Variations and Their Impact on Circuits and Systems: Methodology

     Article • IEEE Transactions on Electron Devices, August 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

378. 
     Hierarchical Simulation of Process Variations and Their Impact on Circuits and Systems: Results

     Article • IEEE Transactions on Electron Devices, August 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

379. 
     Performance Assessment of Nanoscale Field-Effect Diodes

     Article • IEEE Transactions on Electron Devices, August 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

380. 
     Foreword Special Issue on Characterization of Nano CMOS Variability by Simulation and Measurements

     Article • IEEE Transactions on Electron Devices, August 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

381. 
     Perspectives of Silicon for Future Spintronic Applications From the Peculiarities of the Subband Structure in Thin Films

     Article • IEEE Transactions on Nanotechnology, July 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

382. 
     Integration of atomistic and continuum-level electromigration models

     Article • July 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

383. 
     A simulator for local anodic oxidation of silicon surfaces

     Article • May 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

384. 
     Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors

     Article • ECS Transactions, April 2011, The Electrochemical Society

     Siegfried Selberherr

385. 
     Subband Structure Engineering in Silicon-On-Insulator FinFETs Using Confinement

     Article • ECS Transactions, April 2011, The Electrochemical Society

     Siegfried Selberherr

386. 
     Transport properties of spin field-effect transistors built on Si and InAs

     Article • March 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

387. 
     Electromigration in submicron interconnect features of integrated circuits

     Article • Materials Science and Engineering R Reports, February 2011, Elsevier

     Siegfried Selberherr

388. 
     The Economic Limit to Moore's Law

     Article • IEEE Transactions on Semiconductor Manufacturing, February 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

389. 
     Stochastic model of the resistive switching mechanism in bipolar resistive random access memory: Monte Carlo simulations

     Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, January 2011, American Vacuum Society

     Siegfried Selberherr

390. 
     Classical Device Modeling

     Article • January 2011, Springer Science + Business Media

     Siegfried Selberherr

391. 
     Deterministic Solvers for the Boltzmann Transport Equation

     Article • January 2011, Springer Science + Business Media

     Siegfried Selberherr

392. 
     Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations

     Article • January 2011, Springer Science + Business Media

     Siegfried Selberherr

393. 
     Parallelization Strategy for Hierarchical Run Length Encoded Data Structures

     Article • January 2011, ACTA Press

     Siegfried Selberherr

394. 
     Stochastic Algorithm for Solving the Wigner-Boltzmann Correction Equation

     Article • January 2011, Springer Science + Business Media

     Siegfried Selberherr

395. 
     Strain-Induced Effects in Advanced MOSFETs

     Article • January 2011, Springer Science + Business Media

     Siegfried Selberherr

396. 
     Transport modeling for nanoscale semiconductor devices

     Article • November 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

397. 
     Stochastic modeling of bipolar resistive switching in metal-oxide based memory by Monte Carlo technique

     Article • Journal of Computational Electronics, October 2010, Springer Science + Business Media

     Siegfried Selberherr

398. 
     A Monte Carlo simulation of reproducible hysteresis in RRAM

     Article • October 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

399. 
     A stochastic model of bipolar resistive switching in metal-oxide-based memory

     Article • September 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

400. 
     Impact of parameter variability on electromigration lifetime distribution

     Article • September 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

401. 
     Stochastic modeling hysteresis and resistive switching in bipolar oxide-based memory

     Article • September 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

402. 
     Strained MOSFETs on ordered SiGe dots

     Article • September 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

403. 
     Three-dimensional simulation of focused ion beam processing using the level set method

     Article • September 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

404. 
     Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting

     Article • August 2010, Wiley

     Siegfried Selberherr

405. 
     Electromigration anisotropy and mechanical stress in modern copper interconnect

     Article • July 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

406. 
     Stochastic modeling of the resistive switching mechanism in oxide-based memory

     Article • July 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

407. 
     Modeling demands for nanoscale devices

     Article • June 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

408. 
     Physically based models of electromigration: From Black’s equation to modern TCAD models

     Article • Microelectronics Reliability, June 2010, Elsevier

     Siegfried Selberherr

409. 
     The Economic Limit to Moore's Law [Point of View

     Article • Proceedings of the IEEE, March 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

410. 
     Electron subband structure in strained silicon UTB films from the Hensel–Hasegawa–Nakayama model – Part 1 analytical consideration and strain-induced valley splitting

     Article • Solid-State Electronics, February 2010, Elsevier

     Siegfried Selberherr

411. 
     Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model

     Article • Journal of Electronic Materials, January 2010, Springer Science + Business Media

     Siegfried Selberherr

412. 
     A Dispatched Covariant Type System for Numerical Applications in C++

     Article • January 2010, American Institute of Physics

     Siegfried Selberherr

413. 
     A Modular Tool Chain for High Performance CFD Simulations in Intracranial Aneurysms

     Article • January 2010, American Institute of Physics

     Siegfried Selberherr

414. 
     A Unified Topological Layer for Finite Element Space Discretization

     Article • January 2010, American Institute of Physics

     Siegfried Selberherr

415. 
     Abgeleitete Datentypen

     Article • January 2010, Springer Science + Business Media

     Siegfried Selberherr

416. 
     Ausdrücke

     Article • January 2010, Springer Science + Business Media

     Siegfried Selberherr

417. 
     Biotin-Streptavidin Sensitive BioFETs and Their Properties

     Article • January 2010, Springer Science + Business Media

     Siegfried Selberherr

418. 
     Dateien

     Article • January 2010, Springer Science + Business Media

     Siegfried Selberherr

419. 
     Datenstrukturen

     Article • January 2010, Springer Science + Business Media

     Siegfried Selberherr

420. 
     Die Entwicklungsumgebung

     Article • January 2010, Springer Science + Business Media

     Siegfried Selberherr

421. 
     Dynamischer Speicher

     Article • January 2010, Springer Science + Business Media

     Siegfried Selberherr

422. 
     Ein exemplarisches Software-Projekt

     Article • January 2010, Springer Science + Business Media

     Siegfried Selberherr

423. 
     Einführung

     Article • January 2010, Springer Science + Business Media

     Siegfried Selberherr

424. 
     Eingabe — Ausgabe

     Article • January 2010, Springer Science + Business Media

     Siegfried Selberherr

425. 
     Erste Schritte

     Article • January 2010, Springer Science + Business Media

     Siegfried Selberherr

426. 
     Fehlerbehandlung

     Article • January 2010, Springer Science + Business Media

     Siegfried Selberherr

427. 
     Felder

     Article • January 2010, Springer Science + Business Media

     Siegfried Selberherr

428. 
     Funktionen

     Article • January 2010, Springer Science + Business Media

     Siegfried Selberherr

429. 
     Grafische Darstellungsmittel

     Article • January 2010, Springer Science + Business Media

     Siegfried Selberherr

430. 
     Iterationen

     Article • January 2010, Springer Science + Business Media

     Siegfried Selberherr

431. 
     Modeling floating body Z-RAM storage cells

     Article • January 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

432. 
     Numerik

     Article • January 2010, Springer Science + Business Media

     Siegfried Selberherr

433. 
     Numerische Datentypen

     Article • January 2010, Springer Science + Business Media

     Siegfried Selberherr

434. 
     Particle Model of the Scattering-Induced Wigner Function Correction

     Article • January 2010, Springer Science + Business Media

     Siegfried Selberherr

435. 
     Programmieren in C

     Article • January 2010, Springer Science + Business Media

     Siegfried Selberherr

436. 
     Rekursive Funktionen

     Article • January 2010, Springer Science + Business Media

     Siegfried Selberherr

437. 
     Relation between the PCB near field and the common mode coupling from the PCB to cables

     Article • January 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

438. 
     Selektionen

     Article • January 2010, Springer Science + Business Media

     Siegfried Selberherr

439. 
     Simulation of Field-Effect Biosensors (BioFETs) for Biotin-Streptavidin Complexes

     Article • January 2010, American Institute of Physics

     Siegfried Selberherr

440. 
     Speicherklassen

     Article • January 2010, Springer Science + Business Media

     Siegfried Selberherr

441. 
     Three-dimensional level set based Bosch process simulations using ray tracing for flux calculation

     Article • Microelectronic Engineering, January 2010, Elsevier

     Siegfried Selberherr

442. 
     Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models

     Article • January 2010, Springer Science + Business Media

     Siegfried Selberherr

443. 
     Variablen, Konstanten

     Article • January 2010, Springer Science + Business Media

     Siegfried Selberherr

444. 
     Zeichenketten

     Article • January 2010, Springer Science + Business Media

     Siegfried Selberherr

445. 
     Zeiger

     Article • January 2010, Springer Science + Business Media

     Siegfried Selberherr

446. 
     GUIDE: Parallel library-centric application design by a generic scientific simulation environment

     Article • International Journal of Parallel Emergent and Distributed Systems, December 2009, Taylor & Francis

     Siegfried Selberherr

447. 
     Synergies in scientific computing by combining multi-paradigmatic languages for high-performance applications

     Article • International Journal of Parallel Emergent and Distributed Systems, December 2009, Taylor & Francis

     Siegfried Selberherr

448. 
     Subband parameters in strained (110) silicon films from the Hensel-Hasegawa-Nakayama model of the conduction band

     Article • December 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

449. 
     Analysis of Electromigration in Dual-Damascene Interconnect Structures

     Article • Journal of Integrated Circuits and Systems, November 2009, Journal of Integrated Circuits and Systems

     Siegfried Selberherr

450. 
     Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress

     Article • Journal of Integrated Circuits and Systems, November 2009, Journal of Integrated Circuits and Systems

     Siegfried Selberherr

451. 
     Electromigration failure development in modern dual-damascene interconnects

     Article • October 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

452. 
     Scaling of advanced floating body Z-RAM storage cells: A modeling approach

     Article • October 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

453. 
     Modeling of modern MOSFETs with strain

     Article • Journal of Computational Electronics, October 2009, Springer Science + Business Media

     Siegfried Selberherr

454. 
     Guest editorial

     Article • Journal of Computational Electronics, October 2009, Springer Science + Business Media

     Siegfried Selberherr

455. 
     Modeling Techniques for Strained CMOS Technology

     Article • ECS Transactions, September 2009, The Electrochemical Society

     Siegfried Selberherr

456. 
     Impact of Confinement and Stress on the Subband Parameters in Ultra-Thin Silicon Films

     Article • ECS Transactions, September 2009, The Electrochemical Society

     Siegfried Selberherr

457. 
     The Effect of Microstructure on Electromigration-Induced Failure Development

     Article • ECS Transactions, September 2009, The Electrochemical Society

     Siegfried Selberherr

458. 
     Three-Dimensional Plasma Etching Simulation using Advanced Ray Tracing and Level Set Techniques

     Article • ECS Transactions, September 2009, The Electrochemical Society

     Siegfried Selberherr

459. 
     Dependence of Injection Velocity and Capacitance of Si Nanowires on Diameter, Orientation, and Gate Bias: An Atomistic Tight-Binding Study

     Article • September 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck, Siegfried Selberherr

460. 
     A Fast Void Detection Algorithm for Three-Dimensional Deposition Simulation

     Article • September 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

461. 
     Copper Microstructure Impact on Evolution of Electromigration Induced Voids

     Article • September 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

462. 
     Performance evaluation of graphene nanoribbon infrared photodetectors

     Article • September 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

463. 
     The Effect of Copper Grain Size Statistics on the Electromigration Lifetime Distribution

     Article • September 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

464. 
     Thickness Dependence of the Effective Masses in a Strained Thin Silicon Film

     Article • September 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

465. 
     A fast level set framework for large three-dimensional topography simulations

     Article • Computer Physics Communications, August 2009, Elsevier

     Siegfried Selberherr

466. 
     The effect of microstructure on electromigration induced voids

     Article • July 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

467. 
     The effect of microstructure on the electromigration lifetime distribution

     Article • July 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

468. 
     Preface to the Special Section on Electromigration Published in March 2009

     Article • IEEE Transactions on Device and Materials Reliability, June 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

469. 
     Impact of Confinement of Semiconductor and Band Engineering on Future Device Performance

     Article • ECS Transactions, May 2009, The Electrochemical Society

     Siegfried Selberherr

470. 
     Classical Approximation of the Scattering Induced Wigner Correction Equation

     Article • May 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

471. 
     Modeling of Low Concentrated Buffer DNA Detection with Suspend Gate Field-Effect Transistors (SGFET)

     Article • May 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

472. 
     The Linear Combination of Bulk Bands-Method for Electron and Hole Subband Calculations in Strained Silicon Films and Surface Layers

     Article • May 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

473. 
     A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern Interconnects

     Article • IEEE Transactions on Device and Materials Reliability, March 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

474. 
     Valley splitting in thin silicon films from a two-band k·p model

     Article • March 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

475. 
     Cavity Model for the Slot Radiation of an Enclosure Excited by Printed Circuit Board Traces With Different Loads

     Article • IEEE Transactions on Electromagnetic Compatibility, February 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

476. 
     Stress-Induced Anisotropy of Electromigration in Copper Interconnects

     Article • January 2009, American Institute of Physics

     Siegfried Selberherr

477. 
     Modeling current transport in carbon nanotube transistors

     Article • December 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

478. 
     Electron subband structure and controlled valley splitting in silicon thin-body SOI FETs: Two-band k·p theory and beyond

     Article • Solid-State Electronics, December 2008, Elsevier

     Siegfried Selberherr

479. 
     Numerical study of quantum transport in carbon nanotube transistors

     Article • Mathematics and Computers in Simulation, December 2008, Elsevier

     Siegfried Selberherr

480. 
     The effect of uniaxial stress on band structure and electron mobility of silicon

     Article • Mathematics and Computers in Simulation, December 2008, Elsevier

     Siegfried Selberherr

481. 
     Current transport in carbon nanotube transistors

     Article • October 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

482. 
     Two-band k·p model for the conduction band in silicon: Impact of strain and confinement on band structure and mobility

     Article • Solid-State Electronics, October 2008, Elsevier

     Siegfried Selberherr

483. 
     Ultra-scaled Z-RAM cell

     Article • October 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

484. 
     A robust parallel delaunay mesh generation approach suitable for three-dimensional TCAD

     Article • September 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

485. 
     Analysis of electromigration in redundant vias

     Article • September 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

486. 
     Analysis of microstructure impact on electromigration

     Article • September 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

487. 
     Coupling of non-equilibrium Green’s function and Wigner function approaches

     Article • September 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

488. 
     Mobility enhancement in thin silicon films: Strain and thickness dependences of the effective masses and non-parabolicity parameter

     Article • September 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

489. 
     Radiated emission from the slot of a slim cubical enclosure with multiple sources inside

     Article • September 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

490. 
     Simulation of field-effect Biosensors (BioFETs)

     Article • September 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

491. 
     Three-dimensional topography simulation using advanced level set and ray tracing methods

     Article • September 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

492. 
     Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress

     Article • ECS Transactions, August 2008, The Electrochemical Society

     Siegfried Selberherr

493. 
     Domain separation with port interfaces for calculation of emissions from enclosure slots

     Article • August 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

494. 
     TCAD solutions for submicron copper interconnect

     Article • July 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

495. 
     Calculation of the radiation from the slot of a slim enclosure with a cavity resonator model

     Article • May 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

496. 
     Comprehensive modeling of electromigration induced interconnect degradation mechanisms

     Article • May 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

497. 
     Current transport in carbon nanotube transistors

     Article • April 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

498. 
     Comparative analysis of pseudo-potential and tight-binding band structure calculations with an analytical two-band k•p model: conduction band of silicon

     Article • March 2008, SPIE

     Siegfried Selberherr

499. 
     Stress-induced valley splitting in silicon thin films

     Article • March 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

500. 
     The effect of inelastic phonon scattering on carbon nanotube-based transistor performance

     Article • Journal of Physics Conference Series, March 2008, Institute of Physics Publishing

     Siegfried Selberherr

501. 
     Effect of strains on anisotropic material transport in copper interconnect structures under electromigration stress

     Article • Journal of Computational Electronics, February 2008, Springer Science + Business Media

     Siegfried Selberherr

502. 
     Electron subband dispersions in ultra-thin silicon films from a two-band k⋅p theory

     Article • Journal of Computational Electronics, January 2008, Springer Science + Business Media

     Siegfried Selberherr

503. 
     Analysis of Electromigration in Dual-Damascene Interconnect Structures

     Article • January 2008, The Electrochemical Society

     Siegfried Selberherr

504. 
     Concepts for High-Perfomance Scientific Computing

     Article • January 2008, Springer Science + Business Media

     Siegfried Selberherr

505. 
     Current transport models for nanoscale semiconductor devices

     Article • Materials Science and Engineering R Reports, January 2008, Elsevier

     Siegfried Selberherr

506. 
     Reduction of the dark-current in carbon nanotube photo-detectors

     Article • January 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

507. 
     Three-dimensional simulation of sacrificial etching

     Article • Microsystem Technologies, December 2007, Springer Science + Business Media

     Siegfried Selberherr

508. 
     Strain-induced anisotropy of electromigration in copper interconnect

     Article • December 2007, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

509. 
     Two-Band k·p model for the conduction band in silicon: impact of Strain and confinement on band structure and mobility

     Article • December 2007, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

510. 
     Geometry optimization for carbon nanotube transistors

     Article • Solid-State Electronics, November 2007, Elsevier

     Siegfried Selberherr

511. 
     Predictive Simulation of AlGaN/GaN HEMTs

     Article • October 2007, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

512. 
     Electromigration Modeling for Interconnect Structures in Microelectronics

     Article • ECS Transactions, September 2007, The Electrochemical Society

     Siegfried Selberherr

513. 
     Foreword Special Issue on Simulation and Modeling of Nanoelectronics Devices

     Article • IEEE Transactions on Electron Devices, September 2007, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

514. 
     The Effect of General Strain on the Band Structure and Electron Mobility of Silicon

     Article • IEEE Transactions on Electron Devices, September 2007, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

515. 
     High performance, uniaxially-strained, silicon and germanium, double-gate p-MOSFETs

     Article • Microelectronic Engineering, September 2007, Elsevier

     Siegfried Selberherr

516. 
     Numerical Simulation Of Biochemical Behaviour Of Biosensors With Perforated Membrane

     Article • June 2007, European Council for Modeling and Simulation

     Siegfried Selberherr

517. 
     A study of ion implantation into crystalline germanium

     Article • Solid-State Electronics, June 2007, Elsevier

     Siegfried Selberherr

518. 
     Alternating-Direction Implicit Formulation of the Finite-Element Time-Domain Method

     Article • IEEE Transactions on Microwave Theory and Techniques, June 2007, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

519. 
     Editorial

     Article • Microelectronics Reliability, June 2007, Elsevier

     Siegfried Selberherr

520. 
     Three-dimensional simulation of sacrificial etching

     Article • May 2007, SPIE

     Siegfried Selberherr

521. 
     Comparison of deposition models for a TEOS LPCVD process

     Article • Microelectronics Reliability, April 2007, Elsevier

     Siegfried Selberherr

522. 
     Planarization of Silicon Dioxide and Silicon Nitride Passivation Layers

     Article • Journal of Physics Conference Series, April 2007, Institute of Physics Publishing

     Siegfried Selberherr

523. 
     VSP – A gate stack analyzer

     Article • Microelectronics Reliability, April 2007, Elsevier

     Siegfried Selberherr

524. 
     Scattering and space-charge effects in Wigner Monte Carlo simulations of single and double barrier devices

     Article • Journal of Computational Electronics, February 2007, Springer Science + Business Media

     Siegfried Selberherr

525. 
     Volume inversion mobility in SOI MOSFETs for different thin body orientations

     Article • Solid-State Electronics, February 2007, Elsevier

     Siegfried Selberherr

526. 
     A multi-purpose Schrödinger-Poisson Solver for TCAD applications

     Article • Journal of Computational Electronics, January 2007, Springer Science + Business Media

     Siegfried Selberherr

527. 
     Dissipative transport in CNTFETs

     Article • Journal of Computational Electronics, January 2007, Springer Science + Business Media

     Siegfried Selberherr

528. 
     Editorial

     Article • Journal of Computational Electronics, January 2007, Springer Science + Business Media

     Siegfried Selberherr

529. 
     Tunneling CNTFETs

     Article • Journal of Computational Electronics, January 2007, Springer Science + Business Media

     Siegfried Selberherr

530. 
     Modeling of Advanced Semiconductor Devices

     Article • January 2007, The Electrochemical Society

     Siegfried Selberherr

531. 
     Effects of shear strain on the conduction band in silicon: An efficient two-band k·p theory

     Article • January 2007, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

532. 
     Electron Mobility Model for $\langle \hbox{110} \rangle$ Stressed Silicon Including Strain-Dependent Mass

     Article • IEEE Transactions on Nanotechnology, January 2007, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

533. 
     The role of inelastic electron-phonon interaction on the on-current and gate delay time of CNT FETs

     Article • January 2007, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

534. 
     Investigation of Intrinsic Stress Effects in Cantilever Structures

     Article • January 2007, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

535. 
     Optimization of the Perfectly Matched Layer for the Finite-Element Time-Domain Method

     Article • IEEE Microwave and Wireless Components Letters, January 2007, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

536. 
     A Computational Framework for Topological Operations

     Article • January 2007, Springer Science + Business Media

     Siegfried Selberherr

537. 
     Carbon Nanotube Based Transistors: A Computational Study

     Article • January 2007, American Institute of Physics

     Siegfried Selberherr

538. 
     Finite difference solutions of the nonlinear Schrödinger equation and their conservation of physical quantities

     Article • Communications in Mathematical Sciences, January 2007, International Press of Boston

     Siegfried Selberherr

539. 
     Low-Field Mobility in Strained Silicon Inversion Layers and UTB MOSFETs for Different Substrate Orientations

     Article • January 2007, American Institute of Physics

     Siegfried Selberherr

540. 
     Modeling current transport in ultra-scaled field-effect transistors

     Article • Microelectronics Reliability, January 2007, Elsevier

     Siegfried Selberherr

541. 
     Self-Consistent Wigner Monte Carlo Simulations of Current in Emerging Nanodevices: Role of Tunneling and Scattering

     Article • January 2007, American Institute of Physics

     Siegfried Selberherr

542. 
     Simulation of Semiconductor Processes and Devices 2007

     Article • January 2007, Springer Science + Business Media

     Siegfried Selberherr

543. 
     Three-dimensional on-chip inductance and resistance extraction

     Article • January 2007, ACM (Association for Computing Machinery)

     Siegfried Selberherr

544. 
     Physical modeling of electron mobility enhancement for arbitrarily strained silicon

     Article • Journal of Computational Electronics, December 2006, Springer Science + Business Media

     Siegfried Selberherr

545. 
     Scattering and space-charge effects in Wigner Monte Carlo simulations of single and double barrier devices

     Article • Journal of Computational Electronics, December 2006, Springer Science + Business Media

     Siegfried Selberherr

546. 
     High-Field Electron Mobility Model for Strained-Silicon Devices

     Article • IEEE Transactions on Electron Devices, December 2006, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

547. 
     A Comprehensive Study of Carbon Nanotube Based Transistors: The Effects of Geometrical, Interface Barrier, and Scattering Parameters

     Article • December 2006, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

548. 
     Numerical Analysis of Gate Stacks

     Article • ECS Transactions, October 2006, The Electrochemical Society

     Siegfried Selberherr

549. 
     A Study of Boron Implantation into High Ge Content SiGe Alloys

     Article • ECS Transactions, October 2006, The Electrochemical Society

     Siegfried Selberherr

550. 
     Anisotropic Mesh Refinement for the Simulation of Three-Dimensional Semiconductor Manufacturing Processes

     Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, October 2006, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

551. 
     Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential Equations

     Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, October 2006, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

552. 
     Orientation Dependence of the Low Field Mobility in Double-and Single-gate SOI FETs

     Article • September 2006, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

553. 
     A Finite Element Time-Domain Algorithm Based on the Alternating-Direction Implicit Method

     Article • September 2006, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

554. 
     Analytical Modeling of Electron Mobility in Strained Germanium

     Article • September 2006, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

555. 
     Electron Inversion Layer Mobility Enhancement by Uniaxial Stress on (001) and (110) Oriented MOSFETs

     Article • September 2006, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

556. 
     Monte Carlo Simulation of Boron Implantation into (100) Germanium

     Article • September 2006, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

557. 
     Strain Effects on Quasi-Bound State Tunneling in Advanced SOI CMOS Technologies

     Article • September 2006, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

558. 
     The Effect of Electron-Phonon Interaction on the Static and Dynamic Response of CNTFETs

     Article • September 2006, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

559. 
     Three-Dimensional Simulation of Intrinsic Stress Build-Up in Thin Films

     Article • September 2006, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

560. 
     Optimal Design for Carbon Nanotube Transistors

     Article • September 2006, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

561. 
     Planarization of Passivation Layers during Manufacturing Processes of Image Sensors

     Article • September 2006, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

562. 
     Efficient Calculation of Lifetime Based Direct Tunneling Through Stacked Dielectrics

     Article • ECS Transactions, July 2006, The Electrochemical Society

     Siegfried Selberherr

563. 
     Impact of Random Bit Values on NBTI Lifetime of an SRAM Cell

     Article • July 2006, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

564. 
     Simulation of Texture Development Caused Stress Build-Up in Electroplated Copper Lines

     Article • July 2006, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

565. 
     Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress

     Article • July 2006, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

566. 
     A fast and stable Poisson-Schrödinger solver for the analysis of carbon nanotube transistors

     Article • Journal of Computational Electronics, July 2006, Springer Science + Business Media

     Siegfried Selberherr

567. 
     Rigorous modeling of carbon nanotube transistors

     Article • Journal of Physics Conference Series, May 2006, Institute of Physics Publishing

     Siegfried Selberherr

568. 
     Current Flow in Upcoming Microelectronic Devices

     Article • April 2006, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

569. 
     Device Simulation Demands of Upcoming Microelectronics Devices

     Article • International Journal of High Speed Electronics and Systems, March 2006, World Scientific Pub Co Pte Lt

     Siegfried Selberherr

570. 
     Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations

     Article • January 2006, The Electrochemical Society

     Siegfried Selberherr

571. 
     Analysis of Hole Transport in Arbitrarily Strained Germanium

     Article • January 2006, The Electrochemical Society

     Siegfried Selberherr

572. 
     Theoretical Investigation Of Performance In Uniaxially- and Biaxially-Strained Si, SiGe and Ge Double-Gate p-MOSFETs

     Article • January 2006, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

573. 
     Strain engineering for CMOS devices

     Article • January 2006, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

574. 
     A Tensorial High-Field Electron Mobility Model for Strained Silicon

     Article • January 2006, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

575. 
     Microstructure and Stress Aspects of Electromigration Modeling

     Article • January 2006, American Institute of Physics

     Siegfried Selberherr

576. 
     Optimizing the Performance of Carbon Nanotube Transistors

     Article • January 2006, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

577. 
     Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator

     Article • January 2006, Springer Science + Business Media

     Siegfried Selberherr

578. 
     Computational Intelligence, Bioinformatics and Computational Biology: A Brief Overview of Methods, Problems and Perspectives

     Article • Journal of Computational and Theoretical Nanoscience, December 2005, American Scientific Publishers

     Siegfried Selberherr

579. 
     An advanced equation assembly module

     Article • Engineering With Computers, November 2005, Springer Science + Business Media

     Siegfried Selberherr

580. 
     A method for generating structurally aligned grids for semiconductor device simulation

     Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, October 2005, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

581. 
     Optimization of Single-Gate Carbon-Nanotube Field-Effect Transistors

     Article • IEEE Transactions on Nanotechnology, September 2005, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

582. 
     Quantum transport in ultra-scaled double-gate MOSFETs: A Wigner function-based Monte Carlo approach

     Article • Solid-State Electronics, September 2005, Elsevier

     Siegfried Selberherr

583. 
     Optimization of Schottky barrier carbon nanotube field effect transistors

     Article • Microelectronic Engineering, August 2005, Elsevier

     Siegfried Selberherr

584. 
     Transient electro-thermal investigations of interconnect structures exposed to mechanical stress

     Article • June 2005, SPIE

     Siegfried Selberherr

585. 
     Separated carrier injection control in carbon nanotube field-effect transistors

     Article • Journal of Applied Physics, May 2005, American Institute of Physics

     Siegfried Selberherr

586. 
     Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices

     Article • Materials Science Forum, May 2005, Trans Tech Publications

     Siegfried Selberherr

587. 
     Numerical Analysis of SiC Merged PiN Schottky Diodes

     Article • Materials Science Forum, May 2005, Trans Tech Publications

     Siegfried Selberherr

588. 
     Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET Fabrication

     Article • Materials Science Forum, May 2005, Trans Tech Publications

     Siegfried Selberherr

589. 
     Nonparabolic macroscopic transport models for device simulation based on bulk Monte Carlo data

     Article • Journal of Applied Physics, May 2005, American Institute of Physics

     Siegfried Selberherr

590. 
     Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors

     Article • Journal of Computational Electronics, April 2005, Springer Science + Business Media

     Siegfried Selberherr

591. 
     Electron Mobility Model for Strained-Si Devices

     Article • IEEE Transactions on Electron Devices, April 2005, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

592. 
     Applications of Three-Dimensional Topography Simulation in the Design of Interconnect Lines

     Article • January 2005, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

593. 
     Dynamic Mesh Adaptation for Three-Dimensional Electromigration Simulation

     Article • January 2005, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

594. 
     Efficient Calculation of Quasi-Bound State Tunneling in CMOS Devices

     Article • January 2005, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

595. 
     Modeling of Tunneling Currents for Highly Degraded CMOS Devices

     Article • January 2005, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

596. 
     Monte Carlo Simulation of Ion Implantation for Doping of Strained Silicon MOSFETs

     Article • January 2005, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

597. 
     Shot Noise Suppression and Enhancement at 2D Hopping and in Single-Electron Arrays

     Article • January 2005, American Institute of Physics

     Siegfried Selberherr

598. 
     Three-Dimensional Simulation of Stress Dependent Thermal Oxidation

     Article • January 2005, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

599. 
     Analysis of Split-Drain MAGFETs

     Article • IEEE Transactions on Electron Devices, December 2004, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

600. 
     A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Semiconductor Devices

     Article • Journal of Computational Electronics, October 2004, Springer Science + Business Media

     Siegfried Selberherr

601. 
     Evolution of Current Transport Models for Engineering Applications

     Article • Journal of Computational Electronics, October 2004, Springer Science + Business Media

     Siegfried Selberherr

602. 
     Extraction of material parameters based on inverse modeling of three-dimensional interconnect fusing structures

     Article • Microelectronics Journal, October 2004, Elsevier

     Siegfried Selberherr

603. 
     Unified particle approach to Wigner-Boltzmann transport in small semiconductor devices

     Article • Physical Review B, September 2004, American Physical Society (APS)

     Siegfried Selberherr

604. 
     Modeling of Tunneling Current and Gate Dielectric Reliability for Nonvolatile Memory Devices

     Article • IEEE Transactions on Device and Materials Reliability, September 2004, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

605. 
     Enhancement of breakdown voltage for Ni-SiC Schottky diodes utilizing field plate edge termination

     Article • Microelectronics Reliability, September 2004, Elsevier

     Siegfried Selberherr

606. 
     Statistical simulation of gate dielectric wearout, leakage, and breakdown

     Article • Microelectronics Reliability, September 2004, Elsevier

     Siegfried Selberherr

607. 
     Feature-Scale Process Simulation and Accurate Capacitance Extraction for the Backend of a 100-nm Aluminum/TEOS Process

     Article • IEEE Transactions on Electron Devices, July 2004, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

608. 
     Rigorous modeling of high-speed semiconductor devices

     Article • Microelectronics Reliability, June 2004, Elsevier

     Siegfried Selberherr

609. 
     A Study on Global and Local Optimization Techniques for TCAD Analysis Tasks

     Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, June 2004, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

610. 
     New SOI lateral power devices with trench oxide

     Article • Solid-State Electronics, June 2004, Elsevier

     Siegfried Selberherr

611. 
     An algorithm for smoothing three-dimensional Monte Carlo ion implantation simulation results

     Article • Mathematics and Computers in Simulation, June 2004, Elsevier

     Siegfried Selberherr

612. 
     A quasi-particle model of the electron–Wigner potential interaction

     Article • Semiconductor Science and Technology, March 2004, Institute of Physics Publishing

     Siegfried Selberherr

613. 
     Direct extraction feature for scattering parameters of SiGe-HBTs

     Article • Applied Surface Science, March 2004, Elsevier

     Siegfried Selberherr

614. 
     Rigorous modeling approach to numerical simulation of SiGe HBTs

     Article • Applied Surface Science, March 2004, Elsevier

     Siegfried Selberherr

615. 
     The state-of-the-art in simulation for optimization of SiGe-HBTs

     Article • Applied Surface Science, March 2004, Elsevier

     Siegfried Selberherr

616. 
     High-voltage lateral trench gate SOI-LDMOSFETs

     Article • Microelectronics Journal, March 2004, Elsevier

     Siegfried Selberherr

617. 
     On the simulation of the formation and dissolution of silicon self-interstitial clusters and the corresponding inverse modeling problem

     Article • Microelectronics Journal, February 2004, Elsevier

     Siegfried Selberherr

618. 
     Analysis and Simulation of Heterostructure Devices

     Article • January 2004, Springer Science + Business Media

     Siegfried Selberherr

619. 
     Operator-Split Method for Variance Reduction in Stochastic Solutions of the Wigner Equation

     Article • Monte Carlo Methods and Applications, January 2004, De Gruyter

     Siegfried Selberherr

620. 
     Semiclassical Approximation of Electron-Phonon Scattering Beyond Fermi's Golden Rule

     Article • SIAM Journal on Applied Mathematics, January 2004, Society for Industrial & Applied Mathematics (SIAM)

     Siegfried Selberherr

621. 
     Solution of the Space-dependent Wigner Equation Using a Particle Model

     Article • Monte Carlo Methods and Applications, January 2004, De Gruyter

     Siegfried Selberherr

622. 
     A Stable Backward Monte Carlo Method for the Solution of the Boltzmann Equation

     Article • January 2004, Springer Science + Business Media

     Siegfried Selberherr

623. 
     A Weight Decomposition Approach to the Sign Problem in Wigner Transport Simulations

     Article • January 2004, Springer Science + Business Media

     Siegfried Selberherr

624. 
     A Zero Field Monte Carlo Algorithm Accounting for the Pauli Exclusion Principle

     Article • January 2004, Springer Science + Business Media

     Siegfried Selberherr

625. 
     A non-parabolic six moments model for the simulation of sub-100 nm devices

     Article • January 2004, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

626. 
     Accurate Modeling of Lattice Site-Dependent Ionization Level of Impurities in α-SiC Devices

     Article • January 2004, Springer Science + Business Media

     Siegfried Selberherr

627. 
     Advanced Transport Models for Sub-Micrometer Devices

     Article • January 2004, Springer Science + Business Media

     Siegfried Selberherr

628. 
     Anisotropic Laplace Refinement for Three-Dimensional Oxidation Simulation

     Article • January 2004, Springer Science + Business Media

     Siegfried Selberherr

629. 
     Full Three-Dimensional Analysis of a Non-Volatile Memory Cell

     Article • January 2004, Springer Science + Business Media

     Siegfried Selberherr

630. 
     Interconnects and Propagation of High Frequency Signals

     Article • January 2004, Springer Science + Business Media

     Siegfried Selberherr

631. 
     Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon

     Article • January 2004, Springer Science + Business Media

     Siegfried Selberherr

632. 
     Monte Carlo Simulation of Ion Implantation in Silicon-Germanium Alloys

     Article • January 2004, Springer Science + Business Media

     Siegfried Selberherr

633. 
     On the Calculation of Quasi-Bound States and Their Impact on Direct Tunneling in CMOS Devices

     Article • January 2004, Springer Science + Business Media

     Siegfried Selberherr

634. 
     On the Validity of the Relaxation Time Approximation for Macroscopic Transport Models

     Article • January 2004, Springer Science + Business Media

     Siegfried Selberherr

635. 
     Performance Evaluation of Linear Solvers Employed for Semiconductor Device Simulation

     Article • January 2004, Springer Science + Business Media

     Siegfried Selberherr

636. 
     The Evolution of the Resistance and Current Density During Electromigration

     Article • January 2004, Springer Science + Business Media

     Siegfried Selberherr

637. 
     Three-Dimensional Analysis of Schottky Barrier Carbon Nanotube Field Effect Transistors

     Article • January 2004, Springer Science + Business Media

     Siegfried Selberherr

638. 
     Evolution of current transport models for engineering applications

     Article • January 2004, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

639. 
     Numerical analysis of coaxial double gate Schottky barrier carbon nanotube field effect transistors

     Article • January 2004, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

640. 
     A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations

     Article • Journal of Computational Electronics, December 2003, Springer Science + Business Media

     Siegfried Selberherr

641. 
     Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method

     Article • Journal of Computational Electronics, December 2003, Springer Science + Business Media

     Siegfried Selberherr

642. 
     Monte Carlo method for modeling of small signal response including the Pauli exclusion principle

     Article • Journal of Applied Physics, November 2003, American Institute of Physics

     Siegfried Selberherr

643. 
     HOT CARRIER EFFECTS WITHIN MACROSCOPIC TRANSPORT MODELS

     Article • International Journal of High Speed Electronics and Systems, September 2003, World Scientific Pub Co Pte Lt

     Siegfried Selberherr

644. 
     Rigorous integration of semiconductor process and device simulators

     Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, September 2003, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

645. 
     Efficient inductance calculation in interconnect structures by applying the Monte Carlo method

     Article • Microelectronics Journal, September 2003, Elsevier

     Siegfried Selberherr

646. 
     Improving SiC lateral DMOSFET reliability under high field stress

     Article • Microelectronics Reliability, September 2003, Elsevier

     Siegfried Selberherr

647. 
     Modeling of retention time degradation due to inelastic trap-assisted tunneling in EEPROM devices

     Article • Microelectronics Reliability, September 2003, Elsevier

     Siegfried Selberherr

648. 
     On smoothing three-dimensional monte carlo ion implantation simulation results

     Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, July 2003, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

649. 
     Stochastic interpretation of the Wigner transport in nanostructures

     Article • Microelectronics Journal, May 2003, Elsevier

     Siegfried Selberherr

650. 
     Simulation of void formation in interconnect lines

     Article • April 2003, SPIE

     Siegfried Selberherr

651. 
     The stationary Monte Carlo method for device simulation. I. Theory

     Article • Journal of Applied Physics, March 2003, American Institute of Physics

     Siegfried Selberherr

652. 
     The stationary Monte Carlo method for device simulation. II. Event biasing and variance estimation

     Article • Journal of Applied Physics, March 2003, American Institute of Physics

     Siegfried Selberherr

653. 
     Simulation of arsenic in situ doping with polysilicon cvd and its application to high aspect ratio trenches

     Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, March 2003, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

654. 
     An event bias technique for Monte Carlo device simulation

     Article • Mathematics and Computers in Simulation, March 2003, Elsevier

     Siegfried Selberherr

655. 
     Monte Carlo algorithms for stationary device simulations

     Article • Mathematics and Computers in Simulation, March 2003, Elsevier

     Siegfried Selberherr

656. 
     A numerical study of partial-SOI LDMOSFETs

     Article • Solid-State Electronics, February 2003, Elsevier

     Siegfried Selberherr

657. 
     A review of hydrodynamic and energy-transport models for semiconductor device simulation

     Article • Proceedings of the IEEE, February 2003, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

658. 
     Prolog to: A review of hydrodynamic and energy-transport models for semiconductor device simulation

     Article • Proceedings of the IEEE, February 2003, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

659. 
     Comparison of numerical quantum device models

     Article • January 2003, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck, Siegfried Selberherr

660. 
     A multistage smoothing algorithm for coupling cellular and polygonal datastructures

     Article • January 2003, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

661. 
     Abgeleitete Datentypen

     Article • January 2003, Springer Science + Business Media

     Siegfried Selberherr

662. 
     Ausdrücke

     Article • January 2003, Springer Science + Business Media

     Siegfried Selberherr

663. 
     Dateien

     Article • January 2003, Springer Science + Business Media

     Siegfried Selberherr

664. 
     Datenstrukturen

     Article • January 2003, Springer Science + Business Media

     Siegfried Selberherr

665. 
     Die Entwicklungsumgebung

     Article • January 2003, Springer Science + Business Media

     Siegfried Selberherr

666. 
     Dynamischer Speicher

     Article • January 2003, Springer Science + Business Media

     Siegfried Selberherr

667. 
     Ein exemplarisches Software-Projekt

     Article • January 2003, Springer Science + Business Media

     Siegfried Selberherr

668. 
     Einführung

     Article • January 2003, Springer Science + Business Media

     Siegfried Selberherr

669. 
     Eingabe — Ausgabe

     Article • January 2003, Springer Science + Business Media

     Siegfried Selberherr

670. 
     Energy transport gate current model accounting for non-Maxwellian energy distribution

     Article • Electronics Letters, January 2003, the Institution of Engineering and Technology (the IET)

     Siegfried Selberherr

671. 
     Error estimated driven anisotropic mesh refinement for three-dimensional diffusion simulation

     Article • January 2003, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

672. 
     Erste Schritte

     Article • January 2003, Springer Science + Business Media

     Siegfried Selberherr

673. 
     Fehlerbehandlung

     Article • January 2003, Springer Science + Business Media

     Siegfried Selberherr

674. 
     Felder

     Article • January 2003, Springer Science + Business Media

     Siegfried Selberherr

675. 
     Funktionen

     Article • January 2003, Springer Science + Business Media

     Siegfried Selberherr

676. 
     Grafische Darstellungsmittel

     Article • January 2003, Springer Science + Business Media

     Siegfried Selberherr

677. 
     Hierarchical Device Simulation

     Article • January 2003, Springer Science + Business Media

     Siegfried Selberherr

678. 
     Iterationen

     Article • January 2003, Springer Science + Business Media

     Siegfried Selberherr

679. 
     Mobility modeling in presence of quantum effects

     Article • January 2003, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

680. 
     Numerical analysis of compound semiconductor RF devices

     Article • January 2003, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

681. 
     Numerik

     Article • January 2003, Springer Science + Business Media

     Siegfried Selberherr

682. 
     Numerische Datentypen

     Article • January 2003, Springer Science + Business Media

     Siegfried Selberherr

683. 
     Programmieren in C

     Article • January 2003, Springer Science + Business Media

     Siegfried Selberherr

684. 
     Reformulation of macroscopic transport models based on the moments of the scattering integral [semiconductor device modeling applications]

     Article • January 2003, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

685. 
     Rekursive Funktionen

     Article • January 2003, Springer Science + Business Media

     Siegfried Selberherr

686. 
     Selektionen

     Article • January 2003, Springer Science + Business Media

     Siegfried Selberherr

687. 
     Speicherklassen

     Article • January 2003, Springer Science + Business Media

     Siegfried Selberherr

688. 
     Substrate orientation-dependence of electron mobility in strained SiGe layers

     Article • January 2003, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

689. 
     Variablen, Konstanten

     Article • January 2003, Springer Science + Business Media

     Siegfried Selberherr

690. 
     Zeichenketten

     Article • January 2003, Springer Science + Business Media

     Siegfried Selberherr

691. 
     Zeiger

     Article • January 2003, Springer Science + Business Media

     Siegfried Selberherr

692. 
     Three-dimensional device optimization by Green's functions

     Article • The European Physical Journal Applied Physics, December 2002, EDP Sciences

     Siegfried Selberherr

693. 
     Simulation of hot-electron oxide tunneling current based on a non-Maxwellian electron energy distribution function

     Article • Journal of Applied Physics, November 2002, American Institute of Physics

     Siegfried Selberherr

694. 
     Design optimization of multi-barrier tunneling devices using the transfer-matrix method

     Article • Solid-State Electronics, October 2002, Elsevier

     Siegfried Selberherr

695. 
     Revision of the standard hydrodynamic transport model for SOI simulation

     Article • IEEE Transactions on Electron Devices, October 2002, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

696. 
     Simulative prediction of the resistance change due to electromigration induced void evolution

     Article • Microelectronics Reliability, September 2002, Elsevier

     Siegfried Selberherr

697. 
     A Wigner equation with quantum electron–phonon interaction

     Article • Microelectronic Engineering, August 2002, Elsevier

     Siegfried Selberherr

698. 
     Characterization of the hot electron distribution function using six moments

     Article • Journal of Applied Physics, March 2002, American Institute of Physics

     Siegfried Selberherr

699. 
     Femtosecond relaxation of hot electrons by phonon emission in presence of electric field

     Article • Physica B Condensed Matter, March 2002, Elsevier

     Siegfried Selberherr

700. 
     Accurate impact ionization model which accounts for hot and cold carrier populations

     Article • Frontiers in Human Neuroscience, January 2002, American Institute of Physics

     Siegfried Selberherr

701. 
     Transient model for terminal current noise

     Article • Frontiers in Human Neuroscience, January 2002, American Institute of Physics

     Siegfried Selberherr

702. 
     Article • Journal of Computational Electronics, January 2002, Springer Science + Business Media

     Siegfried Selberherr

703. 
     Article • Journal of Computational Electronics, January 2002, Springer Science + Business Media

     Siegfried Selberherr

704. 
     An extensible TCAD optimization framework combining gradient based and genetic optimizers

     Article • Microelectronics Journal, January 2002, Elsevier

     Siegfried Selberherr

705. 
     Effects of Stress-Induced Bandgap Narrowing on Reverse-Bias Junction Behavior

     Article • January 2002, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

706. 
     Lateral Trench Gate Super-Junction SOI-LDMOSFETs with Low On-Resistance

     Article • January 2002, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

707. 
     On Increasing the Accuracy of Simulations of Deposition and Etching Processes Using Radiosity and the Level Set Method

     Article • January 2002, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

708. 
     Technology CAD: Device simulation and characterization

     Article • Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena, January 2002, American Vacuum Society

     Siegfried Selberherr

709. 
     Three-Dimensional Analysis of a MAGFET at 300 K and 77 K

     Article • January 2002, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

710. 
     Influence of the distribution function shape and the band structure on impact ionization modeling

     Article • Journal of Applied Physics, December 2001, American Institute of Physics

     Siegfried Selberherr

711. 
     Effectiveness of silicon nitride passivation in III-V based heterojunction bipolar transistors

     Article • Radiation Effects and Defects in Solids, December 2001, Taylor & Francis

     Siegfried Selberherr

712. 
     Simulation of ferroelectric thin films

     Article • Radiation Effects and Defects in Solids, December 2001, Taylor & Francis

     Siegfried Selberherr

713. 
     Micro materials modeling in MINIMOS-NT

     Article • Microsystem Technologies, November 2001, Springer Science + Business Media

     Siegfried Selberherr

714. 
     Investigation of spurious velocity overshoot using Monte Carlo data

     Article • Frontiers in Human Neuroscience, September 2001, American Institute of Physics

     Siegfried Selberherr

715. 
     Using six moments of Boltzmann’s transport equation for device simulation

     Article • Journal of Applied Physics, September 2001, American Institute of Physics

     Siegfried Selberherr

716. 
     Industrial application of heterostructure device simulation

     Article • IEEE Journal of Solid-State Circuits, September 2001, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

717. 
     Fully coupled electrothermal mixed-mode device simulation of SiGe HBT circuits

     Article • IEEE Transactions on Electron Devices, July 2001, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

718. 
     Simulation of power heterojunction bipolar transistors on gallium arsenide

     Article • IEEE Transactions on Electron Devices, June 2001, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

719. 
     Influence of generation/recombination effects in simulations of partially depleted SOI MOSFETs

     Article • Solid-State Electronics, April 2001, Elsevier

     Siegfried Selberherr

720. 
     A finite element simulator for three-dimensional analysis of interconnect structures

     Article • Microelectronics Journal, February 2001, Elsevier

     Siegfried Selberherr

721. 
     Nonlinear electronic transport and device performance of HEMTs

     Article • IEEE Transactions on Electron Devices, February 2001, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

722. 
     A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors

     Article • VLSI Design, January 2001, Hindawi Publishing Corporation

     Siegfried Selberherr

723. 
     A Comparative Study Of Two Numerical Techniques For Inductance Calculation In Interconnect Structures

     Article • January 2001, Springer Science + Business Media

     Siegfried Selberherr

724. 
     A Methodology for Deep Sub-Quartermicron CMOS Technology Characterization

     Article • January 2001, Springer Science + Business Media

     Siegfried Selberherr

725. 
     A Review of Modeling Issues for RF Heterostructure Device Simulation

     Article • January 2001, Springer Science + Business Media

     Siegfried Selberherr

726. 
     A methodology for deep sub-0.25 μm CMOS technology prediction

     Article • IEEE Transactions on Electron Devices, January 2001, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

727. 
     Accurate Simulation of Substrate Currents by Accounting for the Hot Electron Tail Population

     Article • January 2001, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

728. 
     Advanced Hybrid Cellular Based Approach for Three-Dimensional Etching and Deposition Simulation

     Article • January 2001, Springer Science + Business Media

     Siegfried Selberherr

729. 
     An Impact Ionization Model Including Non-Maxwellian And Non-Parabolicity Effects

     Article • January 2001, Springer Science + Business Media

     Siegfried Selberherr

730. 
     Analysis of Ultra Short MOSFETs with High-k Gate Dielectrics

     Article • January 2001, Springer Science + Business Media

     Siegfried Selberherr

731. 
     Boundary Condition Models for Terminal Current Fluctuations

     Article • January 2001, Springer Science + Business Media

     Siegfried Selberherr

732. 
     Computational Single-Electronics

     Article • January 2001, Springer Science + Business Media

     Siegfried Selberherr

733. 
     Green’s Function Approach for Three-Dimensional Diffusion Simulation of Industrial High Voltage Applications

     Article • January 2001, Springer Science + Business Media

     Siegfried Selberherr

734. 
     Investigation of Spurious Velocity Overshoot Using Monte Carlo Data

     Article • January 2001, Springer Science + Business Media

     Siegfried Selberherr

735. 
     Monitoring Arsenic In-Situ Doping with Advanced Models for Poly-Silicon CVD

     Article • January 2001, Springer Science + Business Media

     Siegfried Selberherr

736. 
     Monte Carlo Analysis of the Small-Signal Response of Charge Carriers

     Article • January 2001, Springer Science + Business Media

     Siegfried Selberherr

737. 
     Optimization for TCAD Purposes Using Bernstein Polynomials

     Article • January 2001, Springer Science + Business Media

     Siegfried Selberherr

738. 
     Optimization of Industrial High Voltage Structures by Three-Dimensional Diffusion Simulation

     Article • January 2001, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

739. 
     TCAD Analysis of Gain Cell Retention Time for SRAM Applications

     Article • January 2001, Springer Science + Business Media

     Siegfried Selberherr

740. 
     Two-dimensional simulation of ferroelectric memory cells

     Article • IEEE Transactions on Electron Devices, January 2001, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

741. 
     Variance and Covariance Estimation in Stationary Monte Carlo Device Simulation

     Article • January 2001, Springer Science + Business Media

     Siegfried Selberherr

742. 
     Mixed-mode device simulation

     Article • Microelectronics Journal, December 2000, Elsevier

     Siegfried Selberherr

743. 
     Extensible TCAD optimization framework combining gradient-based and genetic optimizers

     Article • October 2000, SPIE

     Siegfried Selberherr

744. 
     Hydrodynamic modeling of avalanche breakdown in a gate overvoltage protection structure

     Article • Solid-State Electronics, July 2000, Elsevier

     Siegfried Selberherr

745. 
     Three-dimensional resist development simulation — Benchmarks and integration with lithography

     Article • Microelectronic Engineering, June 2000, Elsevier

     Siegfried Selberherr

746. 
     A Monte Carlo method for small signal analysis of the Boltzmann equation

     Article • Journal of Applied Physics, May 2000, American Institute of Physics

     Siegfried Selberherr

747. 
     Parallelization of a Monte Carlo ion implantation simulator

     Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, May 2000, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

748. 
     A temperature dependent model for the saturation velocity in semiconductor materials

     Article • Materials Science in Semiconductor Processing, March 2000, Elsevier

     Siegfried Selberherr

749. 
     A Global Self-Heating Model for Device Simulation

     Article • January 2000, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

750. 
     Analysis of HBT behavior after strong electrothermal stress

     Article • January 2000, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

751. 
     Development of global calibration for accurate GaAs-PHEMT simulation

     Article • IEEE Transactions on Electron Devices, January 2000, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

752. 
     Incorporation of Equipment Simulation into Integrated Feature Scale Profile Evolution

     Article • January 2000, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

753. 
     On the interplay between meshing and discretization in three-dimensional diffusion simulation

     Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, January 2000, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

754. 
     Simulation of InAlAs/InGaAs high electron mobility transistors with a single set of physical parameters

     Article • January 2000, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

755. 
     Simulation of Polysilicon Emitter Bipolar Transistors

     Article • January 2000, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

756. 
     Simulation of gallium-arsenide based high electron mobility transistors

     Article • January 2000, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

757. 
     Theory of the Monte Carlo method for semiconductor device simulation

     Article • IEEE Transactions on Electron Devices, January 2000, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

758. 
     Study of dopant-dependent band gap narrowing in compound semiconductor devices

     Article • Materials Science and Engineering B, December 1999, Elsevier

     Siegfried Selberherr

759. 
     Aktuelle Entwicklungen der Mikroelektronik

     Article • e+i Elektrotechnik und Informationstechnik, September 1999, Springer Science + Business Media

     Siegfried Selberherr

760. 
     An energy relaxation time model for device simulation

     Article • Solid-State Electronics, September 1999, Elsevier

     Siegfried Selberherr

761. 
     Two-Dimensional Simulation of Ferroelectric Memory Cells

     Article • Journal of the Korean Physical Society, August 1999, Korean Physical Society

     Siegfried Selberherr

762. 
     Comment on “Influence of the doping element on the electron mobility in n silicon” [J. Appl. Phys. 83, 3096 (1998)]

     Article • Journal of Applied Physics, June 1999, American Institute of Physics

     Siegfried Selberherr

763. 
     Response to “Comment on ‘Influence of the doping element on the electron mobility in n-silicon’ ” [J. Appl. Phys. 85, 7984 (1999)]

     Article • Journal of Applied Physics, June 1999, American Institute of Physics

     Siegfried Selberherr

764. 
     VLSI performance metric based on minimum TCAD simulations

     Article • Computer Standards & Interfaces, June 1999, Elsevier

     Siegfried Selberherr

765. 
     Drive performance of an asymmetric MOSFET structure: the peak device

     Article • Microelectronics Journal, March 1999, Elsevier

     Siegfried Selberherr

766. 
     A computationally efficient method for three-dimensional simulation of ion implantation

     Article • January 1999, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

767. 
     Advanced Models, Applications, and Software Systems for High Performance Computing — Application in Microelectronics

     Article • January 1999, Springer Science + Business Media

     Siegfried Selberherr

768. 
     Microtransducer CAD

     Article • January 1999, Springer Science + Business Media

     Siegfried Selberherr

769. 
     Simulation of complete VLSI fabrication processes with heterogeneous simulation tools

     Article • IEEE Transactions on Semiconductor Manufacturing, January 1999, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

770. 
     Linear gate assignment: a fast statistical mechanics approach

     Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, January 1999, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

771. 
     Three-dimensional simulation of HPCVD-linking continuum transport and reaction kinetics with topography simulation

     Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, January 1999, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

772. 
     Monte Carlo simulation of silicon amorphization during ion implantation

     Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, December 1998, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

773. 
     Abstracts of Manuscripts in The Journal of Technology Computer Aided Design (TCAD)

     Article • IEEE Electron Device Letters, November 1998, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

774. 
     An interpolation based MOSFET model for low-voltage applications

     Article • Microelectronics Journal, August 1998, Elsevier

     Siegfried Selberherr

775. 
     Die großen Herausforderungen in der Mikroelektronik in den nächsten zehn Jahren

     Article • e+i Elektrotechnik und Informationstechnik, July 1998, Springer Science + Business Media

     Siegfried Selberherr

776. 
     Mixed-element decomposition method for three-dimensional grid adaptation

     Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, July 1998, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

777. 
     Three-dimensional photolithography simulator including rigorous nonplanar exposure simulation for off-axis illumination

     Article • June 1998, SPIE

     Siegfried Selberherr

778. 
     Implications of dopant-dependent low-field mobility and band gap narrowing on the bipolar device performance

     Article • Le Journal de Physique Colloques, June 1998, EDP Sciences

     Siegfried Selberherr

779. 
     Influence of the doping element on the electron mobility in n-silicon

     Article • Journal of Applied Physics, March 1998, American Institute of Physics

     Siegfried Selberherr

780. 
     Single-Electron Memories

     Article • VLSI Design, January 1998, Hindawi Publishing Corporation

     Siegfried Selberherr

781. 
     A CMOS IC for portable EEG acquisition systems

     Article • IEEE Transactions on Instrumentation and Measurement, January 1998, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

782. 
     A Dopant-Dependent Band Gap Narrowing Model Application for Bipolar Device Simulation

     Article • January 1998, Springer Science + Business Media

     Siegfried Selberherr

783. 
     A Physically-Based Electron Mobility Model for Silicon Device Simulation

     Article • January 1998, Springer Science + Business Media

     Siegfried Selberherr

784. 
     A Qualitative Study on Optimized MOSFET Doping Profiles

     Article • January 1998, Springer Science + Business Media

     Siegfried Selberherr

785. 
     A comparative study of single-electron memories

     Article • IEEE Transactions on Electron Devices, January 1998, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

786. 
     Accurate Layout-Based Interconnect Analysis

     Article • January 1998, Springer Science + Business Media

     Siegfried Selberherr

787. 
     Advanced Physical Models for Silicon Device Simulation

     Article • January 1998, Springer Science + Business Media

     Siegfried Selberherr

788. 
     Device Simulator Calibration for Quartermicron CMOS Devices

     Article • January 1998, Springer Science + Business Media

     Siegfried Selberherr

789. 
     Efficient Algorithms for Three-Dimensional Etching and Deposition Simulation

     Article • January 1998, Springer Science + Business Media

     Siegfried Selberherr

790. 
     High-precision interconnect analysis

     Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, January 1998, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

791. 
     Hydrodynamic Mixed-Mode Simulation

     Article • January 1998, Springer Science + Business Media

     Siegfried Selberherr

792. 
     Integrated optimization capabilities in the VISTA technology CAD framework

     Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, January 1998, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

793. 
     Parallel and Distributed TCAD Simulations using Dynamic Load Balancing

     Article • January 1998, Springer Science + Business Media

     Siegfried Selberherr

794. 
     Rigorous Capacitance Simulation of DRAM Cells

     Article • January 1998, Springer Science + Business Media

     Siegfried Selberherr

795. 
     Simulation of AVC Measurements

     Article • January 1998, Springer Science + Business Media

     Siegfried Selberherr

796. 
     Three-Dimensional Adaptive Mesh Relaxation

     Article • January 1998, Springer Science + Business Media

     Siegfried Selberherr

797. 
     Two-Dimensional Simulation of Ferroelectric Nonvolatile Memory Cells

     Article • January 1998, Springer Science + Business Media

     Siegfried Selberherr

798. 
     Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors

     Article • Materials Science Forum, December 1997, Trans Tech Publications

     Siegfried Selberherr

799. 
     Physical models for strained and relaxed GaInAs alloys: Band structure and low-field transport

     Article • Solid-State Electronics, August 1997, Elsevier

     Siegfried Selberherr

800. 
     Simulation of submicron double-heterojunction high electron mobility transistors with MINIMOS-NT

     Article • IEEE Transactions on Electron Devices, May 1997, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

801. 
     Rundschau

     Article • e+i Elektrotechnik und Informationstechnik, April 1997, Springer Science + Business Media

     Siegfried Selberherr

802. 
     Influence of backside doping on the nonlinear capacitances of a PHEMT affecting the VCO frequency characteristics

     Article • January 1997, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

803. 
     Optimization of pseudomorphic HEMT's supported by numerical simulations

     Article • IEEE Transactions on Electron Devices, January 1997, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

804. 
     Rigorous three-dimensional photoresist exposure and development simulation over nonplanar topography

     Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, January 1997, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

805. 
     SIMON-A simulator for single-electron tunnel devices and circuits

     Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, January 1997, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

806. 
     On the lower bounds of CMOS supply voltage

     Article • Solid-State Electronics, April 1996, Elsevier

     Siegfried Selberherr

807. 
     Two-dimensional dopant profiling of submicron metal–oxide–semiconductor field-effect transistor using nonlinear least squares inverse modeling

     Article • Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena, January 1996, American Vacuum Society

     Siegfried Selberherr

808. 
     A single-electron device and circuit simulator with a new algorithm to incorporate co-tunneling

     Article • Journal of Technology Computer Aided Design TCAD, January 1996, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

809. 
     AMIGOS: Analytical model interface & general object-oriented solver

     Article • Journal of Technology Computer Aided Design TCAD, January 1996, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

810. 
     Fully unstructured Delaunay mesh generation using a modified advancing front approach for applications in technology cad

     Article • Journal of Technology Computer Aided Design TCAD, January 1996, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

811. 
     High-level TCAD task representation and automation

     Article • Journal of Technology Computer Aided Design TCAD, January 1996, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

812. 
     Monte Carlo simulation of silicon amorphization during ion implantation

     Article • January 1996, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

813. 
     Optimized algorithms for three-dimensional cellular topography simulation

     Article • Journal of Technology Computer Aided Design TCAD, January 1996, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

814. 
     Three-dimensional photolithography simulation

     Article • Journal of Technology Computer Aided Design TCAD, January 1996, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

815. 
     VLSI performance metric based on minimum TCAD simulations

     Article • Journal of Technology Computer Aided Design TCAD, January 1996, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

816. 
     Device structures and device simulation techniques

     Article • January 1996, the Institution of Engineering and Technology (the IET)

     Siegfried Selberherr

817. 
     Trajectory split method for Monte Carlo simulation of ion implantation

     Article • IEEE Transactions on Semiconductor Manufacturing, November 1995, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

818. 
     Process simulation for the 1990s

     Article • Microelectronics Journal, March 1995, Elsevier

     Siegfried Selberherr

819. 
     Device modelling for the 1990s

     Article • Microelectronics Journal, March 1995, Elsevier

     Siegfried Selberherr

820. 
     The Viennese integrated system for technology CAD applications

     Article • Microelectronics Journal, March 1995, Elsevier

     Siegfried Selberherr

821. 
     3D TCAD at TU Vienna

     Article • January 1995, Springer Science + Business Media

     Siegfried Selberherr

822. 
     A Monte Carlo Transport Model Based on Spherical Harmonics Expansion of the Valence Bands

     Article • January 1995, Springer Science + Business Media

     Siegfried Selberherr

823. 
     A Programmable Tool for Interactive Wafer-State Level Data Processing

     Article • January 1995, Springer Science + Business Media

     Siegfried Selberherr

824. 
     Algorithms and models for cellular based topography simulation

     Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, January 1995, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

825. 
     An advanced model for dopant diffusion in polysilicon

     Article • IEEE Transactions on Electron Devices, January 1995, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

826. 
     Analytical Model for Phosphorus Large Angle Tilted Implantation

     Article • January 1995, Springer Science + Business Media

     Siegfried Selberherr

827. 
     Polygonal Geometry Reconstruction after Cellular Etching or Deposition Simulation

     Article • January 1995, Springer Science + Business Media

     Siegfried Selberherr

828. 
     Statistical Accuracy and CPU Time Characteristic of Three Trajectory Split Methods for Monte Carlo Simulation of Ion Implantation

     Article • January 1995, Springer Science + Business Media

     Siegfried Selberherr

829. 
     TCAD Optimization Based on Task-Level Framework Services

     Article • January 1995, Springer Science + Business Media

     Siegfried Selberherr

830. 
     The extraction of two-dimensional MOS transistor doping via inverse modeling

     Article • IEEE Electron Device Letters, January 1995, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

831. 
     The Simulation System for Three-Dimensional Capacitance and Current Density Calculation with a User Friendly GUI

     Article • January 1995, Springer Science + Business Media

     Siegfried Selberherr

832. 
     Three-Dimensional Grid Adaptation Using a Mixed-Element Decomposition Method

     Article • January 1995, Springer Science + Business Media

     Siegfried Selberherr

833. 
     Two-dimensional simulation of thermal runaway in a nonplanar GTO-thyristor

     Article • IEEE Transactions on Electron Devices, January 1995, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

834. 
     Two-Dimensional Transient Simulation of Charge-Coupled Devices Using MINIMOS NT

     Article • January 1995, Springer Science + Business Media

     Siegfried Selberherr

835. 
     VISTA-user interface, task level, and tool integration

     Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, January 1995, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

836. 
     A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon

     Article • IEEE Transactions on Electron Devices, September 1994, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

837. 
     A hybrid device simulator that combines Monte Carlo and drift-diffusion analysis

     Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, January 1994, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

838. 
     Modelling of Interface Carrier Transport for Device Simulation

     Article • January 1994, Springer Science + Business Media

     Siegfried Selberherr

839. 
     VISTA-the data level

     Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, January 1994, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

840. 
     Finite difference, boundary-fitted grid generation for arbitrarily shaped two-dimensional simulation areas

     Article • Computer Methods in Applied Mechanics and Engineering, December 1993, Elsevier

     Siegfried Selberherr

841. 
     A General Simulation Method for Etching and Deposition Processes

     Article • January 1993, Springer Science + Business Media

     Siegfried Selberherr

842. 
     Analysis of a CMOS-Compatible Vertical Bipolar Transistor

     Article • January 1993, Springer Science + Business Media

     Siegfried Selberherr

843. 
     Electron Transport in Silicon Dioxide at Intermediate and High Electric Fields

     Article • January 1993, Springer Science + Business Media

     Siegfried Selberherr

844. 
     Evaluation of Effective Device Parameters by Comparison of Measured and Simulated C-V Characteristics for Conventional and Pseudomorphic HEMTs

     Article • January 1993, Springer Science + Business Media

     Siegfried Selberherr

845. 
     MOSFET Models for VLSI Circuit Simulation

     Article • January 1993, Springer Science + Business Media

     Siegfried Selberherr

846. 
     Multigrid Methods for Process Simulation

     Article • January 1993, Springer Science + Business Media

     Siegfried Selberherr

847. 
     Practical Use of a Hierarchical Linear Solver Concept for 3D MOS Device Simulation

     Article • January 1993, Springer Science + Business Media

     Siegfried Selberherr

848. 
     Process Flow Representation within the VISTA Framework

     Article • January 1993, Springer Science + Business Media

     Siegfried Selberherr

849. 
     Simulation of Semiconductor Devices and Processes

     Article • January 1993, Springer Science + Business Media

     Siegfried Selberherr

850. 
     Technology CAD Systems

     Article • January 1993, Springer Science + Business Media

     Siegfried Selberherr

851. 
     The Viennese Integrated System for Technology CAD Applications

     Article • January 1993, Springer Science + Business Media

     Siegfried Selberherr

852. 
     Analysis of geometric charge-pumping components in a thin-film SOI device

     Article • Microelectronic Engineering, September 1992, Elsevier

     Siegfried Selberherr

853. 
     Transient two-dimensional numerical analysis of the charge-pumping experiment

     Article • Microelectronic Engineering, September 1992, Elsevier

     Siegfried Selberherr

854. 
     Fast Iterative Solution of Carrier Continuity Equations for Three-Dimensional Device Simulation

     Article • SIAM Journal on Scientific and Statistical Computing, January 1992, Society for Industrial & Applied Mathematics (SIAM)

     Siegfried Selberherr

855. 
     Calculation of contact currents in device simulation

     Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, January 1992, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

856. 
     Two-dimensional numerical modeling of interband tunneling accounting for nonuniform electric field

     Article • January 1992, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

857. 
     A new open technology CAD system

     Article • Microelectronic Engineering, October 1991, Elsevier

     Siegfried Selberherr

858. 
     Monte-Carlo — Poisson coupling using transport coefficients

     Article • Microelectronic Engineering, October 1991, Elsevier

     Siegfried Selberherr

859. 
     On the numerical solution of the three-dimensional semiconductor device equations on vector-concurrent computers

     Article • Computer Physics Communications, August 1991, Elsevier

     Siegfried Selberherr

860. 
     Self-adaptive space and time grids in device simulation

     Article • International Journal for Numerical Methods in Engineering, May 1991, Wiley

     Siegfried Selberherr

861. 
     Device modeling and physics

     Article • Physica Scripta, January 1991, Institute of Physics Publishing

     Siegfried Selberherr

862. 
     The Drift Diffusion Equation and Its Applications in MOSFET Modeling

     Article • January 1991, Springer Science + Business Media

     Siegfried Selberherr

863. 
     Three-dimensional simulation of semiconductor devices on supercomputers

     Article • January 1991, ACM (Association for Computing Machinery)

     Siegfried Selberherr

864. 
     Coupling of Monte Carlo and Drift Diffusion Method with Applications to Metal Oxide Semiconductor Field Effect Transistors

     Article • Japanese Journal of Applied Physics, December 1990, Institute of Physics Publishing

     Siegfried Selberherr

865. 
     On the effect of non-degenerate doping of polysilicon gate in thin oxide MOS-devices—Analytical modeling

     Article • Solid-State Electronics, December 1990, Elsevier

     Siegfried Selberherr

866. 
     The evolution of the MINIMOS mobility model

     Article • Solid-State Electronics, November 1990, Elsevier

     Siegfried Selberherr

867. 
     BAMBI — A transient 2D-MESFET model with general boundary conditions including Schottky and current controlled contacts

     Article • Microelectronics Journal, September 1990, Elsevier

     Siegfried Selberherr

868. 
     Compact Transistor Modelling for Circuit Design

     Article • January 1990, Springer Science + Business Media

     Siegfried Selberherr

869. 
     Numerical treatment of nonrectangular field-oxide for 3-D MOSFET simulation

     Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, January 1990, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

870. 
     Three-dimensional effects due to the field oxide in MOS devices analyzed with MINIMOS 5

     Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, January 1990, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

871. 
     Two-dimensional transient simulation of the turn-off behavior of a planar MOS-transistor

     Article • Solid-State Electronics, September 1989, Elsevier

     Siegfried Selberherr

872. 
     Computer simulations of Schottky contacts with a non-constant recombination velocity

     Article • Solid-State Electronics, May 1989, Elsevier

     Siegfried Selberherr

873. 
     Process modeling

     Article • Microelectronic Engineering, May 1989, Elsevier

     Siegfried Selberherr

874. 
     Monte Carlo simulation of ion implantation into two- and three-dimensional structures

     Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, May 1989, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

875. 
     Three-dimensional process and device modeling

     Article • Microelectronics Journal, January 1989, Elsevier

     Siegfried Selberherr

876. 
     MESFET Analysis with MINIMOS

     Article • January 1989, Springer Science + Business Media

     Siegfried Selberherr

877. 
     MOS device modeling at 77 K

     Article • IEEE Transactions on Electron Devices, January 1989, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

878. 
     Physical Models for Silicon VLSI

     Article • January 1989, Springer Science + Business Media

     Siegfried Selberherr

879. 
     The Monte Carlo Method for Semiconductor Device Simulation

     Article • January 1989, Springer Science + Business Media

     Siegfried Selberherr

880. 
     3D MOSFET DEVICE EFFECTS DUE TO FIELD OXIDE

     Article • Le Journal de Physique Colloques, September 1988, EDP Sciences

     Siegfried Selberherr

881. 
     ON-RESISTANCE IN THE ALDMOST

     Article • Le Journal de Physique Colloques, September 1988, EDP Sciences

     Siegfried Selberherr

882. 
     MOS device modeling at liquid-nitrogen temperature

     Article • January 1988, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

883. 
     Two-dimensional modeling of ion implantation induced point defects

     Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, January 1988, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

884. 
     MINIMOS 3: A MOSFET simulator that includes energy balance

     Article • IEEE Transactions on Electron Devices, May 1987, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

885. 
     Two-dimensional modeling of ion implantation with spatial moments

     Article • Solid-State Electronics, April 1987, Elsevier

     Siegfried Selberherr

886. 
     A NEW MODEL FOR THE DETERMINATION OF POINT DEFECT EQUILIBRIUM CONCENTRATIONS IN SILICON

     Article • COMPEL The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, January 1987, Emerald

     Siegfried Selberherr

887. 
     Die Erweiterung von MINIMOS auf ein 3D Simulationsprogramm

     Article • January 1987, Springer Science + Business Media

     Siegfried Selberherr

888. 
     Efficient two-dimensional Monte Carlo simulation of ion implantation

     Article • January 1987, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

889. 
     The extension of MINIMOS to a three dimensional simulation program

     Article • January 1987, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

890. 
     Zwei-Dimensionale Transiente Simulation des Einschaltverhaltens eines Planaren MOS-Transistors

     Article • January 1987, Springer Science + Business Media

     Siegfried Selberherr

891. 
     Two-Dimensional Green's Function of a Semi-Infinite Anisotropic Dielectric in the Wavenumber Domain

     Article • IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control, May 1986, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

892. 
     Rigorous 3D Electrostatic Field Analysis of SAW Transducers with Closed-Form Formulae

     Article • January 1986, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

893. 
     The Stationary Semiconductor Device Equations

     Article • January 1986, Springer Science + Business Media

     Siegfried Selberherr

894. 
     Process and device modelling for VLSI

     Article • Microelectronics Journal, November 1985, Elsevier

     Siegfried Selberherr

895. 
     Simulation of Critical IC-Fabrication Steps

     Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, October 1985, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

896. 
     Simulation of critical IC-fabrication steps

     Article • IEEE Transactions on Electron Devices, October 1985, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

897. 
     Two-dimensional coupled diffusion modeling

     Article • Physica B+C, March 1985, Elsevier

     Siegfried Selberherr

898. 
     Simulation of Critical IC Fabrication Processes Using Advanced Physical and Numerical Methods

     Article • IEEE Journal of Solid-State Circuits, February 1985, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

899. 
     Simulation of critical IC fabrication processes using advanced physical and numerical methods

     Article • IEEE Transactions on Electron Devices, February 1985, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

900. 
     Zweidimensionale Prozessimulation

     Article • January 1985, Springer Science + Business Media

     Siegfried Selberherr

901. 
     Beihefte zur Zeitschrift für romanische Philologie

     Article • December 1984, De Gruyter

     Siegfried Selberherr

902. 
     Beihefte zur Zeitschrift für romanische Philologie

     Article • December 1984, De Gruyter

     Siegfried Selberherr

903. 
     Beihefte zur Zeitschrift für romanische Philologie 192

     Article • December 1984, De Gruyter

     Siegfried Selberherr

904. 
     Temperature distribution and power dissipation in MOSFETs

     Article • Solid-State Electronics, April 1984, Elsevier

     Siegfried Selberherr

905. 
     ON MODELING THE INTRINSIC NUMBER AND FERMI LEVELS FOR DEVICE AND PROCESS SIMULATION

     Article • COMPEL The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, February 1984, Emerald

     Siegfried Selberherr

906. 
     Implications of Analytical Investigations About the Semiconductor Equations on Device Modeling Programs

     Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, January 1984, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

907. 
     A Glimpse on Results

     Article • January 1984, Springer Science + Business Media

     Siegfried Selberherr

908. 
     Analysis and Simulation of Semiconductor Devices

     Article • January 1984, Springer Science + Business Media

     Siegfried Selberherr

909. 
     Analytical Investigations About the Basic Semiconductor Equations

     Article • January 1984, Springer Science + Business Media

     Siegfried Selberherr

910. 
     Introduction

     Article • January 1984, Springer Science + Business Media

     Siegfried Selberherr

911. 
     JANAP — Ein Programm Zur Simulation Des Zeitverhaltens Von Nichtlinearen Elektrischen Schaltungen

     Article • January 1984, Springer Science + Business Media

     Siegfried Selberherr

912. 
     Numerische Simulation Von Halbleiterbauelementen

     Article • January 1984, Springer Science + Business Media

     Siegfried Selberherr

913. 
     On the Calculation of Charge, Electrostatic Potential and Capacitance in Generalized Finite SAW Structures

     Article • January 1984, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

914. 
     Process Modeling

     Article • January 1984, Springer Science + Business Media

     Siegfried Selberherr

915. 
     Process and device modeling for VISI

     Article • Microelectronics Reliability, January 1984, Elsevier

     Siegfried Selberherr

916. 
     Some Fundamental Properties

     Article • January 1984, Springer Science + Business Media

     Siegfried Selberherr

917. 
     The Discretization of the Basic Semiconductor Equations

     Article • January 1984, Springer Science + Business Media

     Siegfried Selberherr

918. 
     The Physical Parameters

     Article • January 1984, Springer Science + Business Media

     Siegfried Selberherr

919. 
     The Solution of Sparse Systems of Linear Equations

     Article • January 1984, Springer Science + Business Media

     Siegfried Selberherr

920. 
     The Solution of Systems of Nonlinear Algebraic Equations

     Article • January 1984, Springer Science + Business Media

     Siegfried Selberherr

921. 
     A novel finite-element approach to device modeling

     Article • IEEE Transactions on Electron Devices, September 1983, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

922. 
     A singular perturbation approach for the analysis of the fundamental semiconductor equations

     Article • IEEE Transactions on Electron Devices, September 1983, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

923. 
     Finite boxes—A generalization of the finite-difference method suitable for semiconductor device simulation

     Article • IEEE Transactions on Electron Devices, September 1983, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

924. 
     Numerical analysis of acoustic wave generation in anisotropic piezoelectric materials

     Article • Sensors and Actuators, January 1983, Elsevier

     Siegfried Selberherr

925. 
     Modeling static and dynamic behavior of power devices

     Article • January 1983, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

926. 
     Surface and Bulk Wave Velocities in Arbitrary Anisotropic Piezoelectric Materials

     Article • January 1983, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

927. 
     Atlas, matrices et similarités: Petit aperçu dialectométrique

     Article • Computers and the Humanities, June 1982, Springer Science + Business Media

     Siegfried Selberherr

928. 
     A numerical analysis of bulk-barrier diodes

     Article • Solid-State Electronics, April 1982, Elsevier

     Siegfried Selberherr

929. 
     Analysis of Breakdown Phenomena in MOSFET's

     Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, April 1982, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

930. 
     A two-dimensional model of the avalanche effects in MOS transistors

     Article • Solid-State Electronics, March 1982, Elsevier

     Siegfried Selberherr

931. 
     Investigation of parameter sensitivity of short channel mosfets

     Article • Solid-State Electronics, February 1982, Elsevier

     Siegfried Selberherr

932. 
     Numerical Analysis of Acoustic Wave Generation in Anisotropic Piezoelectric Materials

     Article • January 1982, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

933. 
     Simple and accurate representation of implantation parameters by low order polynomals

     Article • Solid-State Electronics, June 1981, Elsevier

     Siegfried Selberherr

934. 
     MINIMOS - A Two-Dimensional MOS Transistor Analyzer

     Article • IEEE Journal of Solid-State Circuits, August 1980, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

935. 
     MINIMOS—A two-dimensional MOS transistor analyzer

     Article • IEEE Transactions on Electron Devices, August 1980, Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

936. 
     Current Transport in Nanoelectronic Semiconductor Devices

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

937. 
     Modeling Current Transport in Ultra-Scaled Field Effect Transistors

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

938. 
     Optimization Issue in Interconnect Analysis

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

939. 
     Impact of NBTI-Driven Parameter Degradation on Lifetime of a 90nm p-MOSFET

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

940. 
     Improving DC and AC characteristics of ohmic contact carbon nanotube field effect transistors

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

941. 
     Inverse modeling of oxid deposition using measurements of a TEOS CVD process

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

942. 
     The effect of device geometry on the static and dynamic response of carbon nanotube field effect transistors

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

943. 
     Tunneling and intersubband coupling in ultra-thin body double-gate mosfets

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

944. 
     A comparison of quantum correction models for the three-dimensional simulation of FinFET structures

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

945. 
     Numerical simulation of selected semiconductor devices

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

946. 
     Three-dimensional topography simulation based on a level set method [deposition and etching processes]

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

947. 
     A method for generating structurally aligned high quality grids and its application to the simulation of a trench gate MOSFET

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

948. 
     Evaluation of ZrO/sub 2/ gate dielectrics for advanced CMOS devices

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

949. 
     From feature scale simulation to backend simulation for a 100 nm CMOS process

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

950. 
     Optimization of electrothermal material parameters using inverse modeling [polysilicon fuse interconnects]

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

951. 
     Rigorous modeling of high-speed semiconductor devices

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

952. 
     Silicon carbide accumulation-mode laterally diffused MOSFET

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

953. 
     Simulation of carrier transport in carbon nanotube field effect transistors

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

954. 
     Simulation of thermal oxidation: a three-dimensional finite element approach

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

955. 
     A calibrated model for silicon self-interstitial cluster formation and dissolution

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

956. 
     A new gate current model accounting for a non-Maxwellian electron energy distribution function

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

957. 
     A strategy to enforce the discrete minimax principle on finite element meshes

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

958. 
     An adaptive grid approach for the simulation of electromigration induced void migration

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

959. 
     Electromigration induced evolution of voids in current crowding areas of interconnects

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

960. 
     Enhanced advancing front Delaunay meshing in TCAD

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

961. 
     Investigation of the electron mobility in strained Si/sub 1-x/Ge/sub x/ at high Ge composition

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

962. 
     Macro-modeling for MOS device simulation

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

963. 
     Recent advances in transport modeling for miniaturized CMOS devices

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

964. 
     Simulation and inverse modeling of TEOS deposition processes using a fast level set method

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

965. 
     Simulation of a "Well Tempered" SOI MOSFET using an enhanced hydrodynamic transport model

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

966. 
     Small-signal analysis and direct S-parameter extraction

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

967. 
     Wigner transport through tunneling structures scattering interpretation of the potential operator

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

968. 
     A Wigner equation for the nanometer and femtosecond transport regime

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

969. 
     Design optimization of multi-barrier tunneling devices using the transfer-matrix method

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

970. 
     Numerical study of partial-SOI LDMOSFET power devices

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

971. 
     Reliable prediction of deep sub-quarter micron CMOS technology performance

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

972. 
     Mixed-mode device simulation

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

973. 
     Practical inverse modeling with SIESTA

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

974. 
     Thermal models for semiconductor device simulation

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

975. 
     SAP-a program package for three-dimensional interconnect simulation

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

976. 
     AMIGOS: analytical model interface and general object-oriented solver

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

977. 
     VLSI performance metric based on minimum TCAD simulations

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

978. 
     Two Dimensional Simulation of Thermal Runaway in a Nonplanar GTO-Thyristor

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

979. 
     A High Performance Generic Scientific Simulation Environment

     Article • Springer Science + Business Media

     Siegfried Selberherr

980. 
     A Monte Carlo MOSFET simulator based on a new method for the Poisson-transport iteration

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

981. 
     A New Method For Simulation Of Etching And Deposition Processes

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

982. 
     A consistent dynamic MOSFET model for low-voltage applications

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

983. 
     A method for unified treatment of interface conditions suitable for device simulation

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

984. 
     A new approach to fully unstructured three-dimensional Delaunay mesh generation with improved element quality

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

985. 
     A new approach to ionized-impurity scattering

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

986. 
     A novel method for extracting the two-dimensional doping profile of a sub-half micron MOSFET

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

987. 
     Adaptive Grid for Monte Carlo Simulation of Ion Implantation

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

988. 
     Adaptive tessellation for the three-dimensional simulation of doping profiles

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

989. 
     An integrated technology CAD environment

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

990. 
     Analysis of high speed heterostructure devices

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

991. 
     Capacitance Calculation Of VLSI Multilevel Wiring Structures

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

992. 
     Comparison of finite element and finite box discretization for three-dimensional diffusion modeling using AMIGOS

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

993. 
     Comprehensive analysis of vacancy dynamics due to electromigration

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

994. 
     Connection of Network and Device Simulation

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

995. 
     Consistent User Interface and Task Level Architecture of a TCAD System

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

996. 
     Consistent comparison of drift-diffusion and hydro-dynamic device simulations

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

997. 
     Dynamic grain-growth and static clustering effects on dopant diffusion in polysilicon

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

998. 
     Efficient Coupling of Monte Carlo and Level Set Methods for Topography Simulation

     Article • Springer Science + Business Media

     Siegfried Selberherr

999. 
     Electro-thermal effects in mixed-mode device simulation

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Siegfried Selberherr

1000. 
      Electrothermai Analysis Oflatch-up In An IGT

      Article • Institute of Electrical & Electronics Engineers (IEEE)

      Siegfried Selberherr