All Stories

  1. High‐Rate Thermal Evaporation of CsPb(Br1−xClx)3 Thin Films and their Optoelectronic Properties for Photovoltaic Power Converters in Optical Wireless Power Transmission
  2. Characterizations of scattering solar concentrators (SSCs) using TiO2-based light scattering layer and reflectors
  3. Device Simulation of CsPbBr3 Solar Cells for High‐Efficiency Blue Light Photovoltaic Power Converters
  4. Demonstration of Excellent Crystalline Silicon Surface Passivation (S < 1.27 cm s−1) by High‐Rate DC‐Sputtered Hydrogenated Amorphous Silicon
  5. Improvement of carrier transport properties of CsPbBr3 thin films by moisture absorption and TbCl3 doping technique
  6. tunnel oxide passivated contact fabricated by sputtering and ion implantation technique
  7. Nanocrystalline gallium nitride electron transport layer for cesium lead bromide photovoltaic power converter in blue light optical wireless power transmission
  8. Characterization of sputtered nanocrystalline gallium nitride for electron selective contact of crystalline silicon solar cell
  9. Effective Photon Management of Non-Surface-Textured Flexible Thin Crystalline Silicon Solar Cells
  10. Photovoltaic effect in Si/SiO2 superlattice microdisk array solar cell structure
  11. Widegap CH3NH3PbBr3 solar cells for optical wireless power transmission application
  12. Effect of Superimposed DC Power on the Properties of Intrinsic Hydrogenated Amorphous Silicon Passivation Layer Deposited by RF Facing Target Sputtering
  13. Impact of bilayer structures on the surface passivation quality of high‐rate‐sputtered hydrogenated amorphous silicon for silicon heterojunction solar cells
  14. Effect of high-temperature post-deposition annealing on cesium lead bromide thin films deposited by vacuum evaporation
  15. Si surface passivation by using triode-type plasma-enhanced chemical vapor deposition with thermally energized film-precursors
  16. MEMS-Based Wavelength-Selective Bolometers
  17. Characterization of p-type nitrogen-doped cuprous oxide/n-type hydrogenated microcrystalline silicon tunnel recombination junction for perovskite/crystalline silicon tandem solar cells
  18. Effect of RF power on the properties of intrinsic hydrogenated amorphous silicon passivation layer deposited by facing target sputtering
  19. Optically-rough and physically-flat TCO substrates for superstrate-type thin-film solar cells: Sol-gel Zn1−xMgxO coating on reaction-ion etched glass substrates
  20. Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage
  21. Fabrication and characterization of sputtered Cu2O:N/c-Si heterojunction diode
  22. Peeling process of thin-film solar cells using graphene layers
  23. Effect of post-deposition annealing on low temperature metalorganic chemical vapor deposited gallium oxide related materials
  24. Influence of Fabrication Processes and Annealing Treatment on the Minority Carrier Lifetime of Silicon Nanowire Films
  25. Optically-rough and physically-flat TCO substrates for superstrate-type thin-film solar cells: sol-gel Zn1−xMgxO coating on nanoimprint patterned glass substrates
  26. Bandgap tuning of silicon nanowire arrays for application to all-silicon tandem solar cells
  27. Communication—Improving Optoelectronic Properties of Electrochemically Deposited Cuprous Oxide Thin-Films by Low-Temperature Post-Deposition Annealing
  28. Observation of Quantum Size Effect from Silicon Nanowall
  29. Device simulation of CH3NH3PbI3perovskite/heterojunction crystalline silicon monolithic tandem solar cells using an n-type a-Si:H/p-type µc-Si1-xOx:H tunnel junction
  30. Investigation of the optical absorption in Si/SiO2 superlattice for the application to solar cells
  31. Temperature-dependent minority carrier lifetime of crystalline silicon wafers passivated by high quality amorphous silicon oxide
  32. Characteristics of Naturally Textured Zn1-xMgxO Transparent Conductive Thin Film Fabricated by Sol-Gel Process
  33. Fabrication of Si/SiO2 Superlattice Microwire Array Solar Cells Using Microsphere Lithography
  34. Triple Layer Antireflection Design Concept for the Front Side of c-Si Heterojunction Solar Cell Based on the Antireflective Effect of nc-3C-SiC:H Emitter Layer
  35. Effect of annealing atmosphere on the electrical and optical properties of sol–gel derived Al doped Zn1−xMgxO thin film
  36. Device simulation of cuprous oxide heterojunction solar cells
  37. Application of n-type microcrystalline silicon oxide as back reflector of crystalline silicon heterojunction solar cells
  38. Effect of Al doping concentration on the electrical and optical properties of sol–gel derived Zn0.87Mg0.13O thin film
  39. Low-temperature-processed a-SiOx:H/a-Si:H tandem cells for full spectrum solar cells
  40. Characterization of laser transferred contact through aluminum oxide passivation layer
  41. Graphene transparent electrode for thin‐film solar cells
  42. Silicon heterojunction solar cells with high surface passivation quality realized using amorphous silicon oxide films with epitaxial phase
  43. High-performance a-Si1-x O x :H/c-Si heterojunction solar cells realized by the a-Si:H/a-Si1-x O x ...
  44. Development of transparent and conductive Al doped Zn1-xMgxO thin film by sol-gel process with two-step annealing
  45. Influence of substrates on formation of polycrystalline silicon nanowire films
  46. Properties of Si/SiO2superlattice nanodisc array prepared by nanosphere lithography
  47. Minority carrier lifetime of thin polycrystalline silicon nanowire films on polycrystalline silicon layer prepared by aluminum-induced crystallization
  48. Heterojunction crystalline silicon solar cells using nanocrystalline cubic silicon carbide emitter
  49. Improvement of n-type nc-3C-SiC:H heterojunction emitter for c-Si solar cells
  50. Silicon quantum dot superlattice solar cell structure including silicon nanocrystals in a photogeneration layer
  51. Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix
  52. Solid-phase crystallization of amorphous silicon nanowire array and optical properties
  53. Amorphous silicon oxide passivation films for silicon heterojunction solar cells studied by hydrogen evolution
  54. In-situ series connection of an amorphous silicon photovoltaic tandem module
  55. Improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition
  56. Deposition of Ag(In,Ga)Se2 Solar Cells by a Modified Three-Stage Method Using a Low-Temperature-Deposited Ag–Se Cap Layer
  57. Improvement of Electrical Properties of Silicon Quantum Dot Superlattice Solar Cells with Diffusion Barrier Layers
  58. Preparation of Al-doped hydrogenated nanocrystalline cubic silicon carbide by VHF-PECVD for heterojunction emitter of n-type crystalline silicon solar cells
  59. Self-aligned local contacts through a-Si:H passivation layer
  60. Quantitative Analysis of Surface Morphology of Boron-Doped Zinc Oxide for Microcrystalline Silicon Solar Cells
  61. Development of the Transparent Conductive Oxide Layer for Nanocrystalline Cubic Silicon Carbide/Silicon Heterojunction Solar Cells with Aluminum Oxide Passivation Layers
  62. Effect of Hydrogen Dilution on the Metastability of Hydrogenated Amorphous Silicon Oxide Solar Cells
  63. High Efficiency Hydrogenated Nanocrystalline Cubic Silicon Carbide/Crystalline Silicon Heterojunction Solar Cells Using an Optimized Buffer Layer
  64. Improvement of Rear Surface Passivation Quality in p-Type Silicon Heterojunction Solar Cells Using Boron-Doped Microcrystalline Silicon Oxide
  65. Modeling and simulation of heterojunction crystalline silicon solar cells with a nanocrystalline cubic silicon carbide emitter
  66. Fabrication of a-SiGeC:H solar cells using monomethyl germane by suppressing carbon incorporation for narrowing optical bandgap
  67. Effects of Annealing and Atomic Hydrogen Treatment on Aluminum Oxide Passivation Layers for Crystalline Silicon Solar Cells
  68. Preparation of ZnO thin films using MOCVD technique with D2O/H2O gas mixture for use as TCO in silicon-based thin film solar cells
  69. Wide-gap a-Si1−xCx:H solar cells with high light-induced stability for multijunction structure applications
  70. High-quality nanocrystalline cubic silicon carbide emitter for crystalline silicon heterojunction solar cells
  71. Aluminum doped hydrogenated nanocrystalline cubic silicon carbide films deposited by VHF-PECVD for p-type window layer of silicon based thin-film solar cells
  72. Amorphous silicon solar cells with novel mesh substrates for concentrator photovoltaic applications
  73. Effect of atomic hydrogen treatment on passivation quality of aluminum oxide for p-type crystalline silicon
  74. Hetero-junction microcrystalline silicon solar cells with wide-gap p-μc-Si<inf>1−x</inf>O<inf>x</inf>:H layer
  75. High open-circuit voltage oxygen-containing silicon quantum dots superlattice solar cells
  76. Optical design of multi-stacked intermediate layers with wavelength-selective reflectance for a-Si:H/μc-Si:H tandem solar cells
  77. Silicon based multijunction solar cells with wide-gap a-Si<inf>1−x</inf>C<inf>x</inf>:H top cell: Experimental and numerical approaches
  78. ZnO films prepared by two-step MOCVD process for use as front TCO in silicon-based thin film solar cells
  79. ZnO films with very high haze ratio prepared by MOCVD technique
  80. ZnO Films with Very High Haze Value for Use as Front Transparent Conductive Oxide Films in Thin-Film Silicon Solar Cells
  81. Effect of p-μc-Si1−xOx:H layer on performance of hetero-junction microcrystalline silicon solar cells
  82. Effects of oxygen addition on electrical properties of silicon quantum dots/amorphous silicon carbide superlattice
  83. Hydrogen plasma treatment for improving bulk passivation quality of c-Si solar cells
  84. Preparation of Narrow-gap a-Si:H Solar Cells by VHF-PECVD Technique
  85. Hydrogenated Amorphous Silicon Oxide Solar Cells Fabricated near the Phase Transition between Amorphous and Microcrystalline Structures
  86. High Quality Aluminum Oxide Passivation Layer for Crystalline Silicon Solar Cells Deposited by Parallel-Plate Plasma-Enhanced Chemical Vapor Deposition
  87. Optimization of p-Type Hydrogenated Microcrystalline Silicon Oxide Window Layer for High-Efficiency Crystalline Silicon Heterojunction Solar Cells
  88. Effect of light intensity on performance of silicon-based thin film solar cells
  89. Fabrication of amorphous silicon carbide films using VHF-PECVD for triple-junction thin-film solar cell applications
  90. Boron-doped Microcrystalline Silicon Oxide Film for Use as Back Surface Field in Cast Polycrystalline Silicon Solar Cells
  91. Optimization of Amorphous Silicon Oxide Buffer Layer for High-Efficiency p-Type Hydrogenated Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells
  92. Development of amorphous silicon-based thin-film solar cells with low-temperature coefficient
  93. Silicon-based thin-film solar cells fabricated near the phase boundary by VHF PECVD technique
  94. Effect of Plasma Power on Structure of Hydrogenated Nanocrystalline Cubic Silicon Carbide Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition at a Low Substrate Temperature
  95. Influence of plasma power and substrate temperature on structure of nanocrystalline germanium carbon thin films by VHF plasma CVD
  96. Observation of the photovoltaics effect from the solar cells using silicon quantum dots superlattice as a light absorption layer
  97. Properties of n-type hydrogenated nanocrystalline cubic silicon carbide films deposited by VHF-PECVD at a low substrate temperature
  98. Wide-gap a-SiC:H solar cells with graded absorption layer for triple cell applications
  99. Effect of thermal annealing on the properties of a-SiCN:H films by hot wire chemical vapor deposition using hexamethyldisilazane
  100. Properties of nanocrystalline SiC:Ge:H alloy deposited by hot-wire chemical vapor deposition using Organosilane and Organogermane
  101. Photoluminescence from Silicon Quantum Dots in Si Quantum Dots/Amorphous SiC Superlattice
  102. Effects of Hydrogen Dilution Ratio on Properties of Hydrogenated Nanocrystalline Cubic Silicon Carbide Films Deposited by Very High-Frequency Plasma-Enhanced Chemical Vapor Deposition
  103. High efficiency protocrystalline silicon/microcrystalline silicon tandem cell with zinc oxide intermediate layer
  104. Preparation of Microcrystalline Germanium Carbon Thin Films by Hot-Wire Chemical Vapor Deposition Using Dimethylgermane
  105. Characterization of Undoped, N- and P-Type Hydrogenated Nanocrystalline Silicon Carbide Films Deposited by Hot-Wire Chemical Vapor Deposition at Low Temperatures
  106. Fabrication of Microcrystalline Cubic Silicon Carbide/Crystalline Silicon Heterojunction Solar Cell by Hot Wire Chemical Vapor Deposition
  107. Preparation of Hydrogenated Amorphous Silicon Carbon Nitride Films by Hot-Wire Chemical Vapor Deposition Using Hexamethyldisilazane for Silicon Solar Cell Applications
  108. Preparation of Nanocrystalline Silicon in Amorphous Silicon Carbide Matrix
  109. Fabrication of μc-3C-SiC/c-Si Heterojunction Solar Cell by Hot Wire CVD System
  110. Low-Temperature Deposition of Highly Conductive n-Type Hydrogenated Nanocrystalline Cubic SiC Films for Solar Cell Applications
  111. Aluminum-doped hydrogenated microcrystalline cubic silicon carbide films deposited by hot wire CVD
  112. Deposition and characterization of μc-Ge1−xCx thin films grown by hot-wire chemical vapor deposition using organo-germane
  113. TiO2-Coated Transparent Conductive Oxide (SnO2:F) Films Prepared by Atmospheric Pressure Chemical Vapor Deposition with High Durability against Atomic Hydrogen
  114. Growth and Characterization of Germanium Carbon Thin Films Deposited by VHF Plasma CVD Technique
  115. Low Temperature Deposition of Hydrogenated Nanocrystalline Cubic Silicon Carbide Thin Films by HWCVD and VHF-PECVD
  116. Nanocrystalline Silicon in Amorphous Silicon Carbide Matrix for Si Quantum Dots Superlattice
  117. Study of the structural properties of a-SiCN: H films using hexamethyldisilazane for high-quality silicon surface passivation
  118. Charge transport in hydrogenated boron-doped nanocrystalline silicon-silicon carbide alloys
  119. Strong influence of boron doping on nanocrystalline silicon-carbide formation by using photo-CVD technique
  120. Structural Defects and Electrical Conductivity in Nanocrystalline SiC:H Films Doped with Boron and Grown by Photostimulated Chemical-Vapor Deposition
  121. Properties of Hydrogenated Microcrystalline Cubic Silicon Carbide Films Deposited by Hot Wire Chemical Vapor Deposition at a Low Substrate Temperature
  122. Low-temperature preparation of boron-doped nanocrystalline SiC:H films using mercury-sensitized photo-CVD technique
  123. Highly conductive microcrystalline silicon carbide films deposited by the hot wire cell method and its application to amorphous silicon solar cells
  124. Characterization of low temperature epitaxial Si and Si1−yCy films grown by hot wire cell method
  125. Low temperature epitaxial growth of Si and Si1−yCy films by hot wire cell method
  126. Development of thin film solar cell based on Cu2ZnSnS4 thin films