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  1. Characterization and quantitative understanding of subthreshold swing of Si metal–oxide–semiconductor field effect transistors at cryogenic temperatures
  2. Diffusion properties of n-type dopants diffused from spin on glass into Ge
  3. Improvement of p-type GaAs0.51Sb0.49 metal-oxide-semiconductor interface properties by using ultrathin In0.53Ga0.47As interfacial layers
  4. ZnO/Si and ZnO/Ge bilayer tunneling field effect transistors: Experimental characterization of electrical properties
  5. Bilayer tunneling field effect transistor with oxide-semiconductor and group-IV semiconductor hetero junction: Simulation analysis of electrical characteristics
  6. InGaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding
  7. Impact of SiGe layer thickness in starting substrates on strained Ge-on-insulator pMOSFETs fabricated by Ge condensation method
  8. III–V/Ge channel MOS device technologies in nano CMOS era
  9. Quantitative evaluation of slow traps near Ge MOS interfaces by using time response of MOS capacitance