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  1. Etched Al0.32Ga0.68N/GaN HEMTs with High Output Current and Breakdown Voltage (>600 V)

    Article • Micro & Nano Letters, February 2018, the Institution of Engineering and Technology (the IET)

    shenlong xie

  2. Enhancement-mode AlGaN/GaN HEMTs with optimized electric field using a partial GaN cap layer

    Article • Micro & Nano Letters, June 2017, the Institution of Engineering and Technology (the IET)

    Song Yuan, shenlong xie