All Stories

  1. Trap States in HfO2/Ga2O3 and Al2O3/Ga2O3 Metal Insulator Semiconductor Structures

    Article • ACS Applied Electronic Materials, June 2025, American Chemical Society (ACS)

    Sergey Chernykh

  2. Trap states and hydrogenation of implanted Si in semi-insulating Ga2O3(Fe)

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, March 2025, American Vacuum Society

    Sergey Chernykh

  3. Deep traps in Ga 2 O 3 Schottky diodes induced by soft electric breakdown

    Article • Materials Advances, January 2025, Royal Society of Chemistry

    Sergey Chernykh

  4. Trap States in p-NiO/n-Ga2O3 Heterojunctions on Czochralski β-Ga2O3 Crystals

    Article • ECS Journal of Solid State Science and Technology, December 2024, The Electrochemical Society

    Sergey Chernykh

  5. Optimization of passivation in AlGaN/GaN heterostructure microwave transistor fabrication by ICP CVD

    Article • Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering, September 2020, National University of Science and Technology MISiS

    Sergey Chernykh

  6. CVD diamond structures for fast neutron detection

    Article • IOP Conference Series Materials Science and Engineering, September 2020, Institute of Physics Publishing

    Sergey Chernykh

  7. Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer

    Article • Journal of Physics D Applied Physics, August 2020, Institute of Physics Publishing

    Sergey Chernykh

  8. Optimization of passivation in AlGaN/GaN heterostructure microwave transistor fabrication by ICP CVD

    Article • Modern Electronic Materials, July 2020, Pensoft Publishers

    Sergey Chernykh

  9. High‐Pressure High‐Temperature Single‐Crystal Diamond Type IIa Characterization for Particle Detectors

    Article • phys stat sol (a), February 2020, Wiley

    Sergey Chernykh

  10. Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

    Article • Journal of Applied Physics, September 2019, American Institute of Physics

    Dr. habil. (Tech. Sci.) Yuri S. Pavlov, Sergey Chernykh

  11. Direct Fast-Neutron Detection with Diamond Homoepitaxial Me–p––p+ Structures

    Article • Nanotechnologies in Russia, September 2019, Pleiades Publishing Ltd

    Sergey Chernykh

  12. Testing of a Prototype Detector of Heavy Charged Particles Based on Diamond Epitaxial Films Obtained by Gas-Phase Deposition

    Article • Instruments and Experimental Techniques, August 2019, Pleiades Publishing Ltd

    Alexey Chernykh, Sergey Chernykh

  13. Fast-Neutron Detectors Based on Surface-Barrier GaAs Sensors with an Ultrahigh-Molecular-Weight Polyethylene Converter

    Article • Instruments and Experimental Techniques, June 2019, Pleiades Publishing Ltd

    Alexey Chernykh, Sergey Chernykh

  14. Defect States Determining Dynamic Trapping-Detrapping in β-Ga2O3 Field-Effect Transistors

    Article • ECS Journal of Solid State Science and Technology, January 2019, The Electrochemical Society

    Sergey Chernykh

  15. GaAs Schottky Barrier Detectors for Alpha-Particle Spectrometry at Temperatures up to 120°C

    Article • Technical Physics Letters, October 2018, Pleiades Publishing Ltd

    Alexey Chernykh, Sergey Chernykh

  16. Detectors on the Basis of High-Purity Epitaxial GaAs Layers for Spectrometry of X and Gamma Rays

    Article • Instruments and Experimental Techniques, September 2018, Pleiades Publishing Ltd

    Alexey Chernykh, Sergey Chernykh

  17. Investigation of the thermal annealing effect on electrical properties of Ni/Au, Ni/Mo/Au and Mo/Au Schottky barriers on AlGaN/GaN heterostructures

    Article • Journal of Physics Conference Series, March 2017, Institute of Physics Publishing

    Alexey Chernykh, Sergey Chernykh

  18. GaAs detectors with an ultra-thin Schottky contact for spectrometry of charged particles

    Article • Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, February 2017, Elsevier

    Alexey Chernykh, Sergey Chernykh

  19. Characterization and simulation of fast neutron detectors based on surface-barrier VPE GaAs structures with polyethylene converter

    Article • Journal of Instrumentation, December 2016, Institute of Physics Publishing

    Alexey Chernykh, Sergey Chernykh

  20. Mo/Al/Mo/Au-based ohmic contacts to AlGaN/GaN heterostructures

    Article • Russian Microelectronics, November 2016, Pleiades Publishing Ltd

    Alexey Chernykh, Sergey Chernykh

  21. Estimation of the energy resolution limit for particle detectors with schottky-barrier based on VPE GaAs

    Article • October 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Alexey Chernykh, Sergey Chernykh

  22. Measurement and simulation of the response to fast neutrons of VPE GaAs detectors with polyethylene converter

    Article • October 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Alexey Chernykh, Sergey Chernykh

  23. Fast neutron detector based on surface-barrier VPE GaAs structures

    Article • Journal of Instrumentation, January 2015, Institute of Physics Publishing

    Alexey Chernykh, Sergey Chernykh

  24. Schottky contacts to high-resistivity epitaxial GaAs layers for detectors of particles and X- or γ-ray photons

    Article • Semiconductors, August 2012, Pleiades Publishing Ltd

    Alexey Chernykh, Sergey Chernykh

  25. Nuclear radiation detectors based on a matrix of ion-implanted p-i-n diodes on undoped GaAs epilayers

    Article • January 2012, American Institute of Physics

    Alexey Chernykh, Sergey Chernykh

  26. Comparative Characteristics of GaAs Detectors and Silicon Pixel Detectors with Internal Amplification

    Article • MRS Proceedings, January 2008, Cambridge University Press

    Alexey Chernykh, Sergey Chernykh