All Stories

  1. High‐Pressure High‐Temperature Single‐Crystal Diamond Type IIa Characterization for Particle Detectors
  2. Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes
  3. Direct Fast-Neutron Detection with Diamond Homoepitaxial Me–p––p+ Structures
  4. Testing of a Prototype Detector of Heavy Charged Particles Based on Diamond Epitaxial Films Obtained by Gas-Phase Deposition
  5. Fast-Neutron Detectors Based on Surface-Barrier GaAs Sensors with an Ultrahigh-Molecular-Weight Polyethylene Converter
  6. Defect States Determining Dynamic Trapping-Detrapping in β-Ga2O3 Field-Effect Transistors
  7. GaAs Schottky Barrier Detectors for Alpha-Particle Spectrometry at Temperatures up to 120°C
  8. Detectors on the Basis of High-Purity Epitaxial GaAs Layers for Spectrometry of X and Gamma Rays
  9. Investigation of the thermal annealing effect on electrical properties of Ni/Au, Ni/Mo/Au and Mo/Au Schottky barriers on AlGaN/GaN heterostructures
  10. GaAs detectors with an ultra-thin Schottky contact for spectrometry of charged particles
  11. Characterization and simulation of fast neutron detectors based on surface-barrier VPE GaAs structures with polyethylene converter
  12. Mo/Al/Mo/Au-based ohmic contacts to AlGaN/GaN heterostructures
  13. Estimation of the energy resolution limit for particle detectors with schottky-barrier based on VPE GaAs
  14. Measurement and simulation of the response to fast neutrons of VPE GaAs detectors with polyethylene converter
  15. Fast neutron detector based on surface-barrier VPE GaAs structures
  16. Schottky contacts to high-resistivity epitaxial GaAs layers for detectors of particles and X- or γ-ray photons
  17. Nuclear radiation detectors based on a matrix of ion-implanted p-i-n diodes on undoped GaAs epilayers
  18. Comparative Characteristics of GaAs Detectors and Silicon Pixel Detectors with Internal Amplification